60results about How to "High insulation resistivity" patented technology

The present invention is material for laminated ceramic capacitor with high temperature stability and basic material inner electrodes. The inner electrode is made of low cost metal, such as Ni, Cu and their alloy. The dielectric material comprises BaTiO3 as main component, and additives in cludes CaO, CaTiO3, BaO, SiO2, SrO2, MnO2, MgO, Co2O3, Co3O4, Fe2O3 and Y2O3 as well as one or more RE oxide and salt in certain proportion and is prepared through mixing, sintering in reducing atmosphere of mixed nitrogen and hydrogen. The dielectric has excellent performance, including room temperature dielectric constant of 2000-3000, etc. The material of the present invention is suitable for producing great capacity superthin laminated ceramic capacity with high insulating resistivity and stable performance.

The invention discloses a multiphase giant dielectric ceramic material. The total component expression of the multiphase giant dielectric ceramic material is AxBnxTi(1-(n+1)xO2, wherein A is selectedfrom at least one of Nb, Ta, V, Mo and Sb, and B is selected from at least one of In, Ga, Al, Co, Cr, Sc, Fe (III) and trivalent rare earth cations; n is the molar ratio of B to A, n is greater than 1and less than or equal to 5, and x is greater than 0 and less than or equal to 0.1. The multiphase giant dielectric ceramic material prepared by the invention has excellent performances of giant dielectric, low loss and good frequency and temperature stability, has high insulation resistivity and high-voltage breakdown resistance, has insulation resistivity higher than 1011 [ohm]cm, and can be applied to high-energy storage devices and supercapacitors. The invention also discloses a preparation method of the multiphase giant dielectric ceramic material.

The invention discloses a ferrite manganese-magnesium-zinc material for power-type inductors, and application thereof. The material is obtained by mixing and calcining iron oxide, magnesium oxide, zinThe invention discloses a ferrite manganese-magnesium-zinc material for power-type inductors, and application thereof. The material is obtained by mixing and calcining iron oxide, magnesium oxide, zinc oxide and manganese oxide, adding auxiliary materials, conventionally grinding, drying and granulating the mixture and then pressing the obtained material. The material has the advantages of low proc oxide and manganese oxide, adding auxiliary materials, conventionally grinding, drying and granulating the mixture and then pressing the obtained material. The material has the advantages of low production cost, high magnetic flux density (Bs up to 4,000 G), high Curie temperature (Tc up to 210 DEG C) and high insulation resistivity [up to 10<3>M omega (500 V)], and can be widely applied to theduction cost, high magnetic flux density (Bs up to 4,000 G), high Curie temperature (Tc up to 210 DEG C) and high insulation resistivity [up to 10<3>M omega (500 V)], and can be widely applied to thepreparation of power-inductor magnetic cores and other materials.preparation of power-inductor magnetic cores and other materials.

The invention discloses a chemical coating prepared dielectric material of base-metal electrode multilayer ceramic capacitor, belonging to the capacitor material preparing technology, which adopts the technical proposal that a plurality of barium titanate grains are coated by the doped elements through chemical coprecipitation; the main ingredient, barium titanate BaTiO3, accounts for 90mol% to 97mol% of the prescription; the amount of nanometer inhibitory coating composite oxide accounts for 3mol% to 10mol% of the total materials. The ceramic material is sintered at a reducing atmosphere controlled by a humidified gas mixture of nitrogen and hydrogen at a temperature between 950 to 1250 DEG C to get a X7R / X5R type MLCC material; wherein the dielectric constant of the material at room temperature is 2000 to 2700; the temperature coefficient of capacitance is less than or equal to positive and negative 15%; the dielectric loss at room temperature is less than or equal to 2%. The ceramic crystal grain under 200nm has low dielectric loss and good material uniformity; the multilayer ceramic capacitor produced with the ceramic crystal grain has the advantages of large capacity, ultrathin dielectric layer and the thickness less than 2um.