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Nanometer ceramic-material doping agent, ceramic capacitor media material and production thereof

A technology of ceramic capacitors and ceramic materials, which is applied in the direction of fixed capacitor dielectrics, fixed capacitor parts, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problems of lead being unfavorable to environmental protection, and achieve low cost and uniformity Good, the effect of reducing the sintering temperature

Inactive Publication Date: 2006-11-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method prepares lead-based ceramic materials, and its main component is lead magnesium niobate-lead titanate (PMN-PT). The harmful element lead is not conducive to environmental protection.

Method used

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  • Nanometer ceramic-material doping agent, ceramic capacitor media material and production thereof
  • Nanometer ceramic-material doping agent, ceramic capacitor media material and production thereof
  • Nanometer ceramic-material doping agent, ceramic capacitor media material and production thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0057] Example 1: Nanoscale ceramic material dopants N1-N4 were prepared by process method 1, as shown in Table 1. Take the preparation of N3 as an example to specify as follows: 12.5mol% magnesium carbonate (MgCO 3 ), 12mol% calcium carbonate (CaCO 3 ), 11.5mol% manganese oxide (MnO 2 ), 1mol% tricobalt tetroxide (Co 3 o 4 ), 33mol% yttrium oxide (Y 2 o 3 ) is dissolved in nitric acid; 30 mol% tetraethyl orthosilicate is mixed with acetylacetone, absolute ethanol and polyethylene glycol in a volume ratio of 3:1:3:1 to form an organic solvent. The sol-gel is prepared by the process method 1, dried at 50-100° C. to obtain a xerogel, heat-treated at 750° C. for 1 hour, and then ground into a powder. The obtained nanoscale ceramic material dopant was observed with a transmission electron microscope (TEM) for its microscopic morphology and particle size distribution. figure 1 A TEM photograph of the sample magnified 100,000 times is given. According to XRD analysis, after ...

Embodiment 2

[0059] Embodiment 2: Using process method 2 to prepare an ultra-fine temperature-stable anti-reduction multilayer ceramic capacitor dielectric material. BaTiO with an average particle size of 0.3 μm synthesized by hydrothermal method in the formula 3It is the base material, accounting for 97% of the total mass of the dielectric material; the dopant is the nanoscale ceramic material dopant N1-N4 prepared in Example 1 of the present invention, accounting for 3% of the total mass of the dielectric material. After the medium material obtained by mixing and ball milling is dried, add 10wt% PVA to mix and granulate, and press to form a disc with a diameter of 10mm and a thickness of 1mm under a pressure of 10Mpa. Coating nickel internal electrode paste on both sides, and then placed in N 2 / H 2 Reducing atmosphere (oxygen partial pressure P(O 2 )=10 -12 Pa) for sintering, the sintering temperature is 1200 ° C for 4 hours, in a weak oxygen atmosphere (oxygen partial pressure P(O ...

Embodiment 3

[0061] Example 3: Using process method 2 to prepare an ultra-fine temperature stable anti-reduction multilayer ceramic capacitor dielectric material. BaTiO with an average particle size of 0.5 μm synthesized by hydrothermal method in the formula 3 It is the base material, accounting for 92-99.5% of the total mass of the dielectric material; the dopant is the nanoscale ceramic material dopant N1 prepared in Example 1 of the present invention, accounting for 0.5%-8.0% of the total mass of the dielectric material. After the medium material obtained by mixing and ball milling is dried, add 10wt% PVA to mix and granulate, and press to form a disc with a diameter of 10mm and a thickness of 1mm under a pressure of 10Mpa. Coating nickel internal electrode paste on both sides, and then placed in N 2 / H 2 Reducing atmosphere (oxygen partial pressure P(O 2 )=10 -12 Pa) for sintering, the sintering temperature is 1220 ° C for 3 hours, in a weak oxygen atmosphere (oxygen partial pressu...

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Abstract

A nanometer ceramic material dopant, medium material of ceramic capacitor and their production are disclosed. The formula of the dopant consists of aA.bB.cC.dR2 O3.eSiO2; A contains Na2O; B contains one or multiple of MgO and CaO; C contains one or multiple of MnO2 and Co3O4; R contains one of multiple of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, among them a, b, c, d and e are coefficient, by computing mol%, 0<=a<=10%, 0<=b<=25%, 0<=c<=15%, 20%<=d<=60%, 10%<=e<=50% and b and c can't be zero at same time. Its advantages include large capacity, adjustable material formula, low sintering temperature, less medium loss, high dielectric constant and better reliability.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a nanoscale ceramic material dopant, a ceramic capacitor dielectric material and a preparation method thereof. Background technique [0002] Multilayer Ceramic Capacitors (MLCC) for short. It stacks the electrode material and the ceramic body alternately and in parallel in multiple layers, and simultaneously fires them as a whole. According to the Electronic Industries Association (EIA) standard, the X7R type MLCC refers to a temperature range between -55 and 125°C, a capacity temperature change rate <±15%, and a dielectric loss (DF)≤2.0%. The X7R type MLCC is divided into two categories according to the composition: one is composed of lead-containing relaxor ferroelectrics, and the other is composed of barium titanate (BaTiO 3 ) based non-lead ferroelectric composition. Since the latter is non-polluting to the environment, and its mechanical streng...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/63C04B35/468C04B35/622H01G4/12H10N30/853
Inventor 周晓华张树人李波朱文奕钟朝位杨成韬
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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