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65results about How to "Efficient passivation" patented technology

Pre-passivation process for a continuous reforming apparatus, and passivation process for a continuous reforming apparatus during the initial reacation

The present invention relates to a pre-passivation process for a continuous reforming apparatus prior to the reaction, or a passivation process for a continuous reforming apparatus during the initial reaction, comprising loading a reforming catalyst into the continuous reforming apparatus, starting the gas circulation and raising the temperature of a reactor, injecting sulfide into the gas at a reactor temperature ranging from 100-650° C., controlling the sulfur amount in the recycle gas within a range of 0.5-100×10−6 L/L so as to passivate the apparatus.
The process of the present invention may also comprise the following steps:
    • (1) loading a reforming catalyst into the continuous reforming apparatus, starting the gas circulation and raising the temperature of a reactor, feeding the reforming feedstock into the reaction system when the temperature of the reactor is increased to 300-460° C., introducing sulfide into the reaction system while or after the reforming feedstock is fed, controlling the ratio of the total sulfur amount introduced into the system to the reforming feedstock within the range of 0.5 μg/g-50 μg/g, reducing the content of sulfide introduced into the system when hydrogen sulfide concentration in the recycle gas reaches to 2.0 μL/L˜30 μL/L; and
    • (2) maintaining the reforming reactor at a temperature of 460-490° C., controlling the ratio of the total sulfur amount introduced into the system to the reforming feedstock within the range of 0.2 μg/g-0.5 μg/g, adjusting the amount of the reforming feedstock to the design value of the apparatus, increasing the reforming reaction temperature to 490-545° C. according to the requirements on the octane number of the liquid product, and letting the reforming apparatus run under normal operating conditions.
Owner:CHINA PETROCHEMICAL CORP +1

Passivation improver for heavy metal pollution farmland and using method thereof

The invention provides a passivation improver for a heavy metal pollution farmland and a using method of the passivation improver. The raw materials comprise coal ash, nano iron powder, zeolite, medical stone, calcium magnesium phosphate, hydroxypropyl modified SiO2 / chitosan nanoparticles and porous spherical cellulose. According to the composite passivation improver, the passivation effect on heavy metals cadmium, lead, arsenic and chromium in soil can be improved, copper and zinc in soil are well passivated, and the soil remediation effect is improved.
Owner:爱土工程环境科技有限公司

Passivating agent for weakly acidic cadmium contaminated soil and application thereof

The invention discloses a passivating agent for weakly acidic cadmium contaminated soil and application thereof. The passivating agent is compounded and mixed from modified biological carbon, and mineral materials including calcium oxide, a calcium magnesium phosphate fertilizer and a silicon fertilizer beneficial to the soil. The passivating agent is applied to the surface of the weakly acidic cadmium contaminated farmland soil, and the application amount of passivating agent is controlled at more than 1.5 wt% of the soil; and then soil and passivating agent rotary tillage is carried out on a plough layer 20cm above the land surface, and the maximum field water holding capacity is maintained at more than 70% stably for more than ten days to complete the in situ remediation of the weakly acidic cadmium contaminated soil. The passivating agent can effectively reduce the content of available cadmium in soil, restore agricultural function of the polluted land, and ensure food security; the passivating agent contains a lot of organic matters and other nutrients, can provide abundant nutrition for the growth of crops, and has the advantages of environment-friendliness, high repair rate, long-term stability, and high application value.
Owner:NANJING UNIV

Light-Assisted Electrochemical Shunt Passivation for Photovoltaic Devices

A method of passivating current-shunting defects in a photovoltaic device and such passivated photovoltaic devices are described. The photovoltaic device includes a thin film body with a superposed electrode comprised of a layer of transparent electrically conductive electrode material. The method includes converting the transparent, electrically conductive electrode material to a material having a higher electrical resistivity than the transparent electrically conductive electrode material or by removing the transparent conducting electrode material, by simultaneously: 1) immersing at least a portion of the electrode in a conversion reagent, 2) illuminating the immersed electrode with a suitable source of illumination, and 3) applying an appropriate electrical bias to activate the conversion.
Owner:UNIVERSITY OF TOLEDO

Perovskite/silicon laminated solar cell and preparation method thereof

The invention belongs to the technical field of solar cells, provides a perovskite / silicon laminated solar cell and a preparation method thereof, and aims to solve the problems that synchronous passivation of multiple types of defects cannot be realized by perovskite material interface passivation in the prior art, the suppression efficiency of carrier interface recombination is low and the like. An organic ionic modifier passivation layer is introduced between a perovskite light absorption layer and a hole transport layer of the perovskite / silicon laminated cell, so that synchronous and efficient passivation of multiple types of defects of an interface is realized, and the defect state density is remarkably reduced; and meanwhile, lattice mismatch at the interface is effectively prevented, and the defect passivation effect is further optimized. In conclusion, the perovskite / silicon laminated solar cell has lower defect state density and higher short-circuit current density and open-circuit voltage, and the overall performance of the perovskite / silicon laminated solar cell is remarkably improved; and moreover, the organic ionic modifier passivation layer is mature in synthesis process and low in price, and has the advantages of high efficiency, stability and low cost.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Semiconductor Device, In Particular Solar Cell

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminium oxide, aluminium nitride or aluminium oxynitride and at least one further element.
Owner:Q CELLS SE

Catalytic surfaces for active protection from toxins

InactiveUS20050136522A1Passivate them efficientlyFacilitate contactPeptide/protein ingredientsHydrolasesEnzymePolyelectrolyte
A bioactive catalytic material is disclosed for providing protection from chemical exposure. The material is composed of enzymes immobilized within polyelectrolyte multilayers and a polymerizable end-capping layer to render stability to enzymes. Also disclosed is the related method for making a bioactive catalytic material and their deposition on substrates of varying size, shape and flexibility for providing active protection from chemical exposure.
Owner:THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY

Surface passivation system for prolonging service life of EDT roughened cold rollers

The invention relates to the technical field of cold roller manufacturing, and discloses a surface passivation system for prolonging service life of EDT roughened cold rollers. The system comprises rotary driving equipment and a pulse electrochemical burr removing device; the pulse electrochemical burr removing device comprises a pulse power supply, a tool electrode and an electric brush; the electric brush is contacted with outer circle surfaces of cold rollers; the head part of the tool electrode is near roughened outer circle surfaces of the cold rollers; a gap for enabling electrolyte to pass through is formed between the head part of the tool electrode and the roughened outer circle surfaces of the cold rollers; an electrolyte nozzle with a spout aligned to the gap is arranged above the gap; the electrolyte nozzle is connected to an electrolyte box through a pump and a pipeline; an electrolyte collecting tank for collecting electrolyte is arranged under the roughened outer circlesof the cold rollers; and the electrolyte collecting tank is connected with the electrolyte box. The system prolongs the service life of the EDT roughened cold rollers, improves the quality of rolledparts, and reduces the roller change efficiency.
Owner:JIANGYIN RUNYUAN MACHINERY

Profile fluorocarbon coating process

InactiveCN108380471AImprove adhesionFinished surface is smoothPretreated surfacesCoatingsEpoxySprayer
The invention discloses a coating process, and particularly provides a profile fluorocarbon coating process. The profile fluorocarbon coating process aims at solving the problems that in the prior art, the thickness of a fluorocarbon coating is not uniform, and due to the fact that the coating is too thick, the texture is cheap, the adhesive force of the coating is insufficient, and the coating isprone to peel. The profile fluorocarbon coating process includes the following steps of (1), polishing; (2), alkaline etching; (3), washing; (4), passivating; (5), primer spraying, wherein epoxy zincrich primer is sprayed twice by an airless sprayer, the thickness of the epoxy zinc rich primer sprayed each time is 8 micrometers, and the spraying interval is 2.5 h; (6), finish paint spraying, wherein embroidery fluorocarbon paint is sprayed twice by a high-voltage static spray gun, the spraying interval is 24 h, surface drying is carried out after the embroidery fluorocarbon paint is sprayed,the surface drying time ranges from 38 h to 48 h, and the thickness of a fluorocarbon embroidery paint dry film formed after surface drying ranges from 40 micrometers to 50 micrometers; and (7), lustering. The paint thickness can meet the beautifying effect of profiles, the paint is not too thick, meanwhile the profiles can be protected sufficiently, and the texture is shown better.
Owner:ZIGONG DONGFANG STEEL STRUCTURE

Manufacturing process for cold-rolling roll

The invention relates to the technical field of rolling roll manufacturing, and discloses a manufacturing process for a cold-rolling roll. The manufacturing process for the cold-rolling roll sequentially comprises the procedures of ingot casting, forging, heat treatment after forging, rough turning machining, quenching and tempering treatment, finish turning machining, surface quenching, cold treatment, low-temperature tempering, accurate grinding machining, surface texturing, and electrochemical passivation, wherein in the procedure of surface quenching, double-frequency quenching treatment is carried out on the working surface of the cold-rolling roll through a double-frequency quenching machine tool; in the procedure of surface texturing, texturing treatment is carried out on the working surface of the cold-rolling roll through an EDT electric spark texturing machine tool; and in the procedure of electrochemical passivation, deburring passivation treatment is carried out on microcosmic tip parts on the working surface of the cold-rolling roll through pulse electrochemical deburring equipment. According to the manufacturing process for the cold-rolling roll, the service life of the EDT textured cold-rolling roll is prolonged, the quality of a rolled part is improved, and the roll changing frequency is reduced.
Owner:JIANGYIN RUNYUAN MACHINERY

N-type monocrystalline silicon HBC solar cell preparation method

The invention discloses an N-type monocrystalline silicon HBC solar cell preparation method, and the method comprises the steps: employing LPCVD equipment and Mark point positioning technology, employing a laser ablation technology to cooperate with an ink protection layer to prepare a P-type doped polycrystalline silicon layer and an N+type doped polycrystalline silicon layer which are arranged at intervals in an interdigital manner, and obtaining an HBC cell with better passivation, higher open-circuit voltage, higher efficiency and lower cost. By adopting the method, the preparation methodof the N-type monocrystalline silicon HBC solar cell is simplified, the N-type monocrystalline silicon HBC solar cell which is good in passivation effect, high in starting voltage and high in efficiency is obtained, and the simple-process, low-cost and high-efficiency large-scale production of the N-type monocrystalline silicon HBC solar cell is realized.
Owner:ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD +2
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