51 results about "Chemical exposure" patented technology

A method for fabricating ICs including via-first through substrate vias (TSVs) and ICs and electronic assemblies therefrom. A substrate having a substrate thickness including a top semiconductor surface and a bottom surface is provided including at least one embedded TSV including a dielectric liner and an electrically conductive filler material formed on the dielectric liner. A portion of the bottom surface of the substrate is mechanically removed to approach but not reach the embedded TSV tip. A protective substrate layer having a protective layer thickness remains over the tip of the embedded TSV after the mechanical removing. Chemical etching exclusive of mechanical etching for removing the protective substrate layer is used form an integral TSV tip that has an exposed tip portion that generally protrudes from the bottom surface of the substrate. The chemical etching is generally a three step chemical etch.

A bioactive catalytic material is disclosed for providing protection from chemical exposure. The material is composed of enzymes immobilized within polyelectrolyte multilayers and a polymerizable end-capping layer to render stability to enzymes. Also disclosed is the related method for making a bioactive catalytic material and their deposition on substrates of varying size, shape and flexibility for providing active protection from chemical exposure.

A proximity network map defines who and what objects have come in contact of each other including location and time. This map selects the list people who have come in contact with known infected people based on contagious disease epidemiology criteria to control its spread, or to prevent radiation poisoning, limit bio-chemicals exposure, etc. These people then undergo testing and quarantine procedures. It monitors hygiene practices and reduces nosocomial infections in hospitals and mitigates the pandemic flu threat by controlling contamination. It controls people interaction, information flow in a high security environment, control crime or gang activities. Each person or object carrying a proximity-sensing unit with unique ID records all units it encountered over a period of time. This information is stored with time stamp in a relational database and transferred to network servers. The databases are then replication throughout via a central web database server for retrieval and analysis.

A contact or proximity network map defines who and what objects have come in contact of each other including location and time. This map selects the list people who have come in contact with known infected people based on contagious disease epidemiology criteria for the purpose of control its spread, or to prevent radiation poisoning, limit bio-chemicals exposure, etc. This selected list of people then undergoes testing and quarantine procedures. It can monitor hygiene practices and reduce nosocomial infections in hospitals and mitigate the pandemic flu threat by controlling spread and control contamination. It controls people interaction, information flow in a high security environment, control crime or gang activities. Each person or object has a proximity-sensing device with unique ID, which is recorded by the encountered units during contact. This information is stored with time stamp in a relational database. It generates contact maps with real time replication of its database via a central web database for retrieval and analysis at any site.

A method for fabricating ICs including via-first through substrate vias (TSVs) and ICs and electronic assemblies therefrom. A substrate having a substrate thickness including a top semiconductor surface and a bottom surface is provided including at least one embedded TSV including a dielectric liner and an electrically conductive filler material formed on the dielectric liner. A portion of the bottom surface of the substrate is mechanically removed to approach but not reach the embedded TSV tip. A protective substrate layer having a protective layer thickness remains over the tip of the embedded TSV after the mechanical removing. Chemical etching exclusive of mechanical etching for removing the protective substrate layer is used form an integral TSV tip that has an exposed tip portion that generally protrudes from the bottom surface of the substrate. The chemical etching is generally a three step chemical etch.

A process which uses a silicone resin to form a wafer-to-carrier bonded package that enables wafer thinning and backside processing while the cured resin exhibits high chemical and thermal resistance. The process is versatile in that the constructed wafer package allows for a wide range of chemical exposures to include dilute acid and base etchants, resist and residue strippers, electroplating chemistries, and also providing use in a range of deposition and etch processes that may exceed 300° C. The process utilizes a mixture of silicone monomers that when applied to semiconductor wafers by a spin-coat application, the result is a planarization of the front side device area, and when a subsequent thin coat is applied will facilitate bonding of the wafer-to-carrier package when heat and pressure are applied. The cured silicone bonded wafer-to-carrier package allows for wafer thinning consistent to industry objectives. Backside processing may include thermal oxide deposition, installed vias, and subsequent metallization in plating baths. Upon completion of a thinned and processed wafer, detachment occurs as described in prior art. Specialty chemical systems which completely dissolves the cured silicone and allows the wafer substrate to be easily rinsed and dried and become available for subsequent processing or final dicing and packaging.

A method of forming a capping layer on a copper interconnect line (14). The method comprises providing a layer (20) of Aluminium over the interconnect line (14) and the dielectric layer (10) in which it is embedded. This may be achieved by deposition or chemical exposure. The structure is then subjected to a process, such as annealing or further chemical exposure, in an environment containing, for example, Nitrogen atoms, so as to cause indiffusion of Al into the copper line (14) and nitridation to form a diffusion barrier 26 of the intermetallic compound CuAlN.

A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.

Catalytic enzyme-modified textiles are disclosed for providing protection from chemical exposure. The textiles are composed of a cloth substrate, at least one polyelectrolyte layer, at least one enzyme layer to degrade the chemical agent, and at least one capping layer. Also disclosed is the related method for making catalytic enzyme-modified textiles.

An electronic monitoring device that archives chemical exposures of a consumable part inside a semiconductor processing tool. The monitoring device includes a memory unit dedicated to the consumable part and which stores a history of the chemical exposures of the consumable part, a processor in communication with the memory unit, and a power supply circuit that supplies power to the processor and the memory unit.

Catalytic enzyme-modified textiles are disclosed for providing protection from chemical exposure. The textiles are composed of a cloth substrate, at least one polyelectrolyte layer, at least one enzyme layer to degrade the chemical agent, and at least one capping layer. Also disclosed is the related method for making catalytic enzyme-modified textiles.

An electronic monitoring device that archives chemical exposures of a consumable part inside a semiconductor processing tool. The monitoring device includes a memory unit dedicated to the consumable part and which stores a history of the chemical exposures of the consumable part, a processor in communication with the memory unit, and a power supply circuit that supplies power to the processor and the memory unit.

A casing drilling system includes a casing having a drill bit at one end. The drill bit is capable of drilling subsurface formations and formed from a material removable by drilling or chemical exposure. The chemical is substantially harmless to the casing. The system includes a centralizer affixed to an interior of the casing. The centralizer includes a receptacle therein for engaging a measurement while drilling tool. The centralizer is formed from a material removable by drilling or chemical exposure, wherein the chemical is substantially harmless to the casing. The system includes a measurement while drilling tool configured to move along the interior of the casing and to engage with the centralizer. The tool includes a device to measure a drilling parameter or a formation parameter. The tool including a latch at an upper end thereof for engagement with a retrieval tool moved through the interior of the casing.