The invention discloses a production method of a low-
emissivity glass. The production method comprises the steps of A,
sputtering a
ceramic titanium target with alternating-current medium-frequency power supply, namely, forming a TiO2
dielectric layer on a glass substrate through magnetron
sputtering; B,
sputtering a
chromium plane target with direct-current power supply, namely, forming a CrNx
barrier layer on the TiO2
dielectric layer through magnetron sputtering; C, sputtering an aluminum-doped
zinc oxide ceramic rotating target with alternating-current power supply, namely, forming an AZO flat layer on the TiO2
dielectric layer through magnetron sputtering; D, sputtering a silver plane target with direct-current power supply,namely, forming an Ag functional layer on the AZO flat layer through magnetron sputtering; E, sputtering with direct-current power supply, namely, forming a (NiCr)xOy layer on the Ag functional layer through magnetron sputtering; F, sputtering a
tin target with alternating-current medium-frequency power supply, namely, forming a SnO2
protection layer on the (NiCr)xOy layer through magnetron sputtering; and G, sputtering a
graphite target with direct-current power source, namely, forming a C layer on the SnO2
protection layer obtained in the step F through magnetron sputtering. The invention aims at providing the production method, which is simple in process, convenient to operate and relatively low in production cost, of the low-
emissivity glass.