Production method of low-emissivity glass
A technology of low-emissivity glass and a production method, which is applied in the field of low-emission glass production, can solve problems such as affecting normal use, not satisfying users, and being easily damaged, so as to prevent scratches, be difficult to be scratched, improve The effect of film wear resistance
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Embodiment 1
[0027] A method for manufacturing low-emissivity glass of the present invention comprises the following steps:
[0028] A. Argon is used as the reaction gas, and the ceramic titanium target is sputtered by AC intermediate frequency power supply, and TiO is magnetron sputtered on the glass substrate. 2 Dielectric layer; the gas flow rate of the argon is 1000 sccm, the TiO 2 The thickness of the dielectric layer is 10nm, and the sputtering power is 30KW;
[0029] B. Nitrogen is used as the reaction gas, argon is used as the shielding gas, and a DC power source is used to sputter a chromium planar target. In step A, TiO 2 Magnetron sputtering CrNx barrier layer on the dielectric layer; the thickness of the CrNx barrier layer is 0.5nm, the volume flow ratio of argon and nitrogen is 1:2, that is, the volume flow ratio of argon and nitrogen is 500sccm:1000sccm; CrNx The barrier layer effectively prevents the Ag layer from being oxidized;
[0030] C, using argon as the reaction ga...
Embodiment 2
[0036] A method for manufacturing low-emissivity glass of the present invention comprises the following steps:
[0037] A. Argon is used as the reaction gas, and the ceramic titanium target is sputtered by AC intermediate frequency power supply, and TiO is magnetron sputtered on the glass substrate. 2 Dielectric layer; the gas flow rate of the argon is 1000 sccm, the TiO 2 The thickness of the dielectric layer is 30nm, and the sputtering power is 90KW;
[0038] B. Nitrogen is used as the reaction gas, argon is used as the shielding gas, and a DC power source is used to sputter a chromium planar target. In step A, TiO 2 Magnetron sputtering CrNx barrier layer on the dielectric layer; the thickness of the CrNx barrier layer is 2nm, the volume flow ratio of argon to nitrogen is 1:2, that is, the volume flow ratio of argon to nitrogen is 500sccm:1000sccm; the CrNx barrier layer effectively prevents the Ag layer from being oxidized;
[0039] C, using argon as the reaction gas, A...
Embodiment 3
[0045] A method for manufacturing low-emissivity glass of the present invention comprises the following steps:
[0046] A. Argon is used as the reaction gas, and the ceramic titanium target is sputtered by AC intermediate frequency power supply, and TiO is magnetron sputtered on the glass substrate. 2 Dielectric layer; the gas flow rate of the argon is 1000 sccm, the TiO 2 The thickness of the dielectric layer is 20nm, and the sputtering power is 50KW;
[0047] B. Nitrogen is used as the reaction gas, argon is used as the shielding gas, and a DC power source is used to sputter a chromium planar target. In step A, TiO 2Magnetron sputtering CrNx barrier layer on the dielectric layer; the thickness of the CrNx barrier layer is 1nm, the volume flow ratio of argon to nitrogen is 1:2, that is, the volume flow ratio of argon to nitrogen is 500sccm:1000sccm; the CrNx barrier layer effectively prevents the Ag layer from being oxidized;
[0048] C, using argon as the reaction gas, AC...
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