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Production method of low-emissivity glass

A technology of low-emissivity glass and a production method, which is applied in the field of low-emission glass production, can solve problems such as affecting normal use, not satisfying users, and being easily damaged, so as to prevent scratches, be difficult to be scratched, improve The effect of film wear resistance

Inactive Publication Date: 2014-05-07
JIEYANG HONGGUANG COATED GLASS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing low-e glass is not strong enough to be easily damaged, which affects normal use and cannot meet the needs of users. Therefore, the existing low-e glass needs to be improved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A method for manufacturing low-emissivity glass of the present invention comprises the following steps:

[0028] A. Argon is used as the reaction gas, and the ceramic titanium target is sputtered by AC intermediate frequency power supply, and TiO is magnetron sputtered on the glass substrate. 2 Dielectric layer; the gas flow rate of the argon is 1000 sccm, the TiO 2 The thickness of the dielectric layer is 10nm, and the sputtering power is 30KW;

[0029] B. Nitrogen is used as the reaction gas, argon is used as the shielding gas, and a DC power source is used to sputter a chromium planar target. In step A, TiO 2 Magnetron sputtering CrNx barrier layer on the dielectric layer; the thickness of the CrNx barrier layer is 0.5nm, the volume flow ratio of argon and nitrogen is 1:2, that is, the volume flow ratio of argon and nitrogen is 500sccm:1000sccm; CrNx The barrier layer effectively prevents the Ag layer from being oxidized;

[0030] C, using argon as the reaction ga...

Embodiment 2

[0036] A method for manufacturing low-emissivity glass of the present invention comprises the following steps:

[0037] A. Argon is used as the reaction gas, and the ceramic titanium target is sputtered by AC intermediate frequency power supply, and TiO is magnetron sputtered on the glass substrate. 2 Dielectric layer; the gas flow rate of the argon is 1000 sccm, the TiO 2 The thickness of the dielectric layer is 30nm, and the sputtering power is 90KW;

[0038] B. Nitrogen is used as the reaction gas, argon is used as the shielding gas, and a DC power source is used to sputter a chromium planar target. In step A, TiO 2 Magnetron sputtering CrNx barrier layer on the dielectric layer; the thickness of the CrNx barrier layer is 2nm, the volume flow ratio of argon to nitrogen is 1:2, that is, the volume flow ratio of argon to nitrogen is 500sccm:1000sccm; the CrNx barrier layer effectively prevents the Ag layer from being oxidized;

[0039] C, using argon as the reaction gas, A...

Embodiment 3

[0045] A method for manufacturing low-emissivity glass of the present invention comprises the following steps:

[0046] A. Argon is used as the reaction gas, and the ceramic titanium target is sputtered by AC intermediate frequency power supply, and TiO is magnetron sputtered on the glass substrate. 2 Dielectric layer; the gas flow rate of the argon is 1000 sccm, the TiO 2 The thickness of the dielectric layer is 20nm, and the sputtering power is 50KW;

[0047] B. Nitrogen is used as the reaction gas, argon is used as the shielding gas, and a DC power source is used to sputter a chromium planar target. In step A, TiO 2Magnetron sputtering CrNx barrier layer on the dielectric layer; the thickness of the CrNx barrier layer is 1nm, the volume flow ratio of argon to nitrogen is 1:2, that is, the volume flow ratio of argon to nitrogen is 500sccm:1000sccm; the CrNx barrier layer effectively prevents the Ag layer from being oxidized;

[0048] C, using argon as the reaction gas, AC...

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PUM

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Abstract

The invention discloses a production method of a low-emissivity glass. The production method comprises the steps of A, sputtering a ceramic titanium target with alternating-current medium-frequency power supply, namely, forming a TiO2 dielectric layer on a glass substrate through magnetron sputtering; B, sputtering a chromium plane target with direct-current power supply, namely, forming a CrNx barrier layer on the TiO2 dielectric layer through magnetron sputtering; C, sputtering an aluminum-doped zinc oxide ceramic rotating target with alternating-current power supply, namely, forming an AZO flat layer on the TiO2 dielectric layer through magnetron sputtering; D, sputtering a silver plane target with direct-current power supply,namely, forming an Ag functional layer on the AZO flat layer through magnetron sputtering; E, sputtering with direct-current power supply, namely, forming a (NiCr)xOy layer on the Ag functional layer through magnetron sputtering; F, sputtering a tin target with alternating-current medium-frequency power supply, namely, forming a SnO2 protection layer on the (NiCr)xOy layer through magnetron sputtering; and G, sputtering a graphite target with direct-current power source, namely, forming a C layer on the SnO2 protection layer obtained in the step F through magnetron sputtering. The invention aims at providing the production method, which is simple in process, convenient to operate and relatively low in production cost, of the low-emissivity glass.

Description

technical field [0001] The invention relates to a method for making low-radiation glass. Background technique [0002] Low-emissivity glass refers to flat coated glass with high reflectivity to infrared radiation and good transmittance to visible light. Low-emissivity glass has good light transmission, heat preservation and heat insulation properties, and is widely used in windows, furnace doors, refrigerator doors and other places. [0003] The existing low-e glass is not strong enough and is easily damaged, which affects normal use and cannot meet the needs of users. Therefore, the existing low-e glass needs to be improved. Contents of the invention [0004] The object of the present invention is to overcome the disadvantages of the prior art and provide a method for manufacturing low-emissivity glass with simple process, convenient operation and relatively low production cost. [0005] In order to achieve the above object, the present invention adopts the following sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
Inventor 魏佳坤
Owner JIEYANG HONGGUANG COATED GLASS
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