34results about How to "Changing the bandgap width" patented technology

The invention discloses a preparation method of GO / Sb-BiOBr composite photocatalyst, comprising the following steps: 1) preparing Sb-BiOBr photocatalyst; 2) preparing GO / Sb-BiOBr composite photocatalyst: weighing Sb-BiOBr photocatalyst and the GO prepared by the airtight oxidation method were put into deionized water respectively, ultrasonically oscillated respectively, and then the two were mixed and ultrasonically oscillated again, washed, filtered, and dried to obtain the GO / Sb‑BiOBr composite photocatalyst precursor, and then the precursor The body was put into a muffle furnace for the second heat preservation and calcined to obtain a GO / Sb-BiOBr composite photocatalyst; a combination of solvothermal method and ultrasonic precipitation method was used to realize the doping of Sb3+ and the recombination with GO. The GO / Sb-BiOBr composite photocatalyst prepared by doping Sb3+ and further loading GO in the present invention not only has a narrow band gap, but also the good electrical conductivity of GO can make photogenerated electrons move quickly and inhibit charge recombination; at the same time, GO The larger specific surface area can increase the adsorption capacity of the photocatalyst, which is more conducive to the degradation of dyes; it can be used for large-scale sewage treatment.

The invention discloses a manufacturing method of an LED epitaxial wafer. By using the method, luminescence area losses can be further reduced, a supplementation layer is increased and growing quality of a quantum well is improved; and a backward voltage is increased, internal electric leakage of a device is reduced, and simultaneously, an In-component gradual-change inclined well layer is used to change a forbidden band width of the well so as to capture more electrons and cavities. Contact areas of the electrons and the cavities are increased. A luminescence area is increased too. Operation speeds of the electrons are reduced and a number of effective electrons which are contacted with the cavities is increased.

The invention discloses a preparation method for an LED with high light efficiency. The preparation method can further reduce the loss of an light-emitting area, additionally adopts a supplementing layer to improve growth quality of quantum wells, improves the reverse voltage, reduces electric leakage inside the device, changes forbidden band width of the wells by utilizing an In composition gradually-varied oblique well layer so as to trap more electrons and holes, increases the contact area between the electrons and the holes, increases the light-emitting area, reduces the operating speed of electrons, increases the number of effective electrons in contact with the holes, and improves the light-emitting efficiency of the LED.

The invention provides a TiZn alloy film and a preparation method and application thereof. The TiZn alloy film comprises a nano-rod structure. The preparation method of the TiZn alloy film includes the step that the TiZn alloy film is prepared on a dielectric film, namely the TiZn alloy film is prepared with an induction method. The lattice constant, in a certain direction, of the dielectric filmis approximate to the lattice constant in a certain direction of one material in an alloy material. The invention further provides a titanium-doped zinc oxide film prepared with the TiZn alloy film asthe raw material. A preparation method of the titanium-doped zinc oxide film includes the step of heating and annealing the TiZn alloy film in the oxidizing atmosphere to obtain the titanium-doped zinc oxide film. The titanium-doped zinc oxide film is applied to the optics. The TiZn alloy film is prepared with the pure physical method, so that pollution is avoided completely, the cost is low, repeatability is achieved, and the atom ratio of Ti to Zn in the TiZn alloy film and the size and height of the nano-rod structure can be flexibly adjusted.

The present invention proposes a Z-mechanism Bi that is rich in oxygen vacancies 2 o 3 @CeO 2 A photocatalyst and its preparation method and application belong to the field of photocatalysis technology, and the method includes 1) preparing a reaction liquid; 2) preparing a catalyst precursor body liquid; 3) N 2 Preparation of Intermediate Bi@CeO by High Temperature Calcination in a Protected Tube Furnace 2 ; 4) Preparation of Z-mechanism Bi rich in oxygen vacancies 2 o 3 @CeO 2 Photocatalyst; the catalyst is nanosheet-like Bi 2 o 3 CeO attached to the curd 2 The curd structure formed on the particle, the oxygen-vacancy-rich Z-mechanism Bi prepared by the method of the present invention 2 o 3 @CeO 2 Photocatalysts can be applied to degrade NOx in the air under visible light conditions, which not only have high degradation rate and long activity retention time, but also the intermediate product NO 2 The yield is small, and the products formed by degradation are low or non-toxic, and will not cause secondary pollution to the air.

The invention discloses a preparation method of tantalum-doped bismuth oxychloride powder. Bismuth nitrate pentahydrate and tantalum chloride are respectively dissolved in an organic solvent, and then the two solutions are mixed for hydrothermal reaction, and washed and dried after the reaction is completed. , that is, tantalum-doped bismuth oxychloride powder is obtained. The invention utilizes common green raw materials to modify BiOCl through a hydrothermal method to prepare tantalum-doped bismuth oxychloride powder. The obtained bismuth oxychloride powder can not only achieve visible light response, but also has good dispersion and uniform size. It has excellent photocatalytic activity and has a remarkable effect on the degradation of organic pollutants such as dyes.

The invention relates to a preparation method of a graphene nanobelt-loaded semi-conductive 3D photocatalytic material. The preparation method comprises dissolving a titanium dioxide precursor in a hydrogen peroxide-ammonium hydroxide mixed solution, stirring the mixed solution until the solution has a yellow color and is clear, adding carbon nitride into the mixed solution, when the solution is turbid, carrying out centrifugation washing, adding deionized water and graphene nanobelts subjected to ultrasonic treatment into the solution, carrying out stirring, carrying out a reaction process in a reactor, centrifuging, washing and drying the reaction product and calcining the dried reaction product in a nitrogen atmosphere to obtain the graphene nanobelt-loaded semi-conductive 3D photocatalytic material. Compared with the prior art, the preparation method has simple processes and effectively improves catalyst activity and photocatalysis performances. Through use of the graphene nanobelt, the graphene nanobelt-loaded semi-conductive 3D photocatalytic material can produce obvious response in a visible light area.

The invention provides a P-doped BiOCl visible light catalyst and a preparation method thereof. In the method, a bismuth nitrate suspension is mixed with a potassium chloride solution, and after adding a phosphorus source, the pH of the mixed solution is adjusted to 2.5-3.5 as a reaction solution, Prepared by reacting at 160℃~180℃ for 20h~24h, wherein the phosphorus source is H 3 PO 4 , NaH 2 PO 2 ·H 2 O, NaH 2 PO 4 and Na 3 PO 4 any of them. In the present invention, a P-doped BiOCl visible light catalyst is synthesized and prepared by a one-step hydrothermal method by selecting a limited doping phosphorus source and a doping ratio. The visible light activity of the catalyst can reach 2.73 times that of the BiOCl photocatalyst, and the preparation method and process are simple. , has excellent application prospects.

The invention belongs to the preparation fields of a photoelectric material and a thin film solar cell, and discloses a high-orientation antimony selenide thin film and a preparation method therefor, particularly an antimony selenide thin film with high orientation. The high-orientation antimony selenide thin film is a one-dimensional chain-like material; the high orientation refers to the thin film formed by the antimony selenide chin which is grown in a direction of <002>. The preparation method specifically comprises two steps of adopting a thermal evaporation method or other methods to prepare the antimony selenide thin film, and then performing a method for carrying out selenylation (sulfuration) processing. By adoption of the preparation method provided by the invention, the high-orientation antimony selenide thin film can be obtained; a more efficient antimony selenide thin film solar cell is expected to be obtained; and in addition, the preparation method is simple and feasible, and low in cost.

The invention discloses a preparation method of a GaN-based semiconductor used for an LED. The preparation method comprises steps that growth quality of a quantum well is improved by additionally providing a supplement layer, and reverse voltage is improved, and internal electric leakage of a device is reduced, and at the same time, by using a tilted well layer having gradually-changed In components, the band gap of the well is changed, and therefore more electrons and holes are captured, contact areas between the electrons and the holes are increased, the operation speed of the electrons is reduced, the number of the electrons effectively contacted with the holes is increased, and the luminous efficiency of the LED is improved.