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A preparation method of gallium nitride-based semiconductors for LEDs

A gallium nitride-based semiconductor technology, applied in the field of gallium nitride-based semiconductor preparation, can solve problems such as poor anti-static breakdown capability, reduced diode performance, and reduced internal quantum efficiency, so as to reduce internal leakage and improve reverse performance. Voltage, effect of reducing operating speed

Active Publication Date: 2019-05-17
SHENZHEN LEPOWER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the traditional gallium nitride-based diode epitaxial wafer structure, the dislocation throughout the entire P-N junction is one of the main factors causing the performance degradation of the diode. Such dislocations will cause a decrease in internal quantum efficiency, reverse leakage, antistatic Poor breakdown ability

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] H 2 High temperature purification of the substrate in the environment; at 1000 ℃ H 2 In the atmosphere, pass 100L / min of H 2 , Keep the reaction chamber pressure at 100mbar, and process the substrate for 8 minutes.

[0035] The epitaxial wafer includes a multi-quantum well layer with a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure sequentially generated from bottom to top from the substrate , Functional layer, light-emitting layer and P-type GaN layer.

[0036] Using metal organic compound chemical vapor deposition method, at 550 ℃, keep the reaction chamber pressure 300mbar, flow 10000sccm NH 3 , 50sccm of TMGa, 100L / min of H 2 , Growing a low-temperature buffer layer GaN with a thickness of 20nm on the substrate.

[0037] Growing a U-type GaN layer on the low-temperature buffer layer GaN: first grow a 2D-type GaN layer with a growth temperature of 1050°C, a thic...

Embodiment 2

[0047] H 2 High temperature purification of the substrate in the environment; H at 1050℃ 2 In the atmosphere, pass 120L / min of H 2 , Maintain the pressure of the reaction chamber at 200 mbar, and process the substrate for 9 minutes.

[0048] The epitaxial wafer includes a multi-quantum well layer with a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure sequentially generated from bottom to top from the substrate , Functional layer, light-emitting layer and P-type GaN layer.

[0049] Using metal organic compound chemical vapor deposition method, at 570℃, keep the pressure of the reaction chamber 450mbar, and pass NH with a flow rate of 15000sccm 3 , 75sccm of TMGa, 120L / min of H 2 , Growing a low-temperature buffer layer GaN with a thickness of 20nm-40nm on the substrate.

[0050] Growing a U-type GaN layer on the low-temperature buffer layer GaN: first grow a 2D-type GaN lay...

Embodiment 3

[0060] H 2 High temperature purification of the substrate in the environment; H at 1100℃ 2 In the atmosphere, pass 130L / min of H 2 , Maintain the reaction chamber pressure at 300mbar, and process the substrate for 10 minutes.

[0061] The epitaxial wafer includes a multi-quantum well layer with a low-temperature buffer layer, a U-type gallium nitride GaN layer, an N-type GaN layer, a barrier layer / well layer / supplementary layer / slope well layer structure sequentially generated from bottom to top from the substrate , Functional layer, light-emitting layer and P-type GaN layer.

[0062] Using metal organic compound chemical vapor deposition method, at 580℃, keep the reaction chamber pressure 600mbar, and pass NH with a flow rate of 20000sccm 3 , 100sccm of TMGa, 130L / min of H 2 , Growing a low-temperature buffer layer GaN with a thickness of 40nm on the substrate.

[0063] Growing a U-type GaN layer on the low-temperature buffer layer GaN: first grow a 2D-type GaN layer with a growth t...

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Abstract

The invention discloses a preparation method of a GaN-based semiconductor used for an LED. The preparation method comprises steps that growth quality of a quantum well is improved by additionally providing a supplement layer, and reverse voltage is improved, and internal electric leakage of a device is reduced, and at the same time, by using a tilted well layer having gradually-changed In components, the band gap of the well is changed, and therefore more electrons and holes are captured, contact areas between the electrons and the holes are increased, the operation speed of the electrons is reduced, the number of the electrons effectively contacted with the holes is increased, and the luminous efficiency of the LED is improved.

Description

Technical field [0001] The invention relates to a method for preparing an LED, in particular to a method for preparing a gallium nitride-based semiconductor used for the LED. Background technique [0002] In recent years, the lighting technology of Light Emitting Diode (LED), known as "green lighting", has developed rapidly. Compared with traditional lighting sources, white light emitting diodes not only have low power consumption, long service life, small size, and environmental protection, but also have the advantages of good modulation performance and high response sensitivity. On the one hand, white light-emitting diodes have the characteristics of high emission power and safety to human eyes; on the other hand, they have the advantages of fast response, good modulation, no electromagnetic interference, and no need to apply for radio frequency spectrum. [0003] The core part of the light-emitting diode is a chip composed of a P-type semiconductor and an N-type semiconductor. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/32B82Y30/00
CPCB82Y30/00H01L33/0075H01L33/06H01L33/325
Inventor 梁沛明
Owner SHENZHEN LEPOWER CO LTD
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