The invention discloses an etching method for a silicon nitride high depth-to-width ratio hole. The method comprises: first of all, placing a semiconductor device of a silicon nitride film, already forming the graph needed by a semiconductor, into en etching cavity; then using a dry-method plasma technology, letting in a high carbon chain molecule fluorocarbon-based gas, an oxidizing gas, a dilution gas and a fluorocarbon-based gas containing hydrogen, adding radio frequency power and exciting plasma; and after a plasma stabilization step, performing etching of the silicon nitride film until the etching morphology, the hole diameter size and the depth of a high depth-to-width ratio hole reach requirements. According to the invention, the silicon nitride film is etched by using the unique fluorocarbon-based gas, through adjusting gas component and power size, the deposition amount of fluorocarbon polymers on the side wall of the deep hole can be controlled, the key dimensions of the hole can be prevented from becoming larger, and polymers already deposited at the bottom of the deep hole can be removed so as to ensure that the etching can be continued, thus the etching morphology of the hole can be adjusted.