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Method for etching metal tungsten material

A metal tungsten, bulk material technology, applied in metal material coating process, process for producing decorative surface effects, coating and other directions, can solve the problems of low etching process rate and poor anisotropy

Active Publication Date: 2015-02-18
苏州含光微纳科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, there is no relevant report on MEMS devices fabricated using metal tungsten body materials as the main structure, and the etching process rate of existing thin-film tungsten materials is generally low and the anisotropy is poor, which has become the main bottleneck
It is suitable for the processing of metal tungsten materials, and there is no report on the etching process that can realize high-speed, high-aspect-ratio etching

Method used

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Embodiment Construction

[0019] The present invention will be further described below by embodiment, but this is not limitation of the present invention, those skilled in the art can make various modifications or improvements according to the basic idea of ​​the present invention, but as long as not departing from the basic idea of ​​the present invention, all within the scope of the present invention.

[0020] 1. Preparation of etching mask:

[0021] Such as figure 1 As shown, the negative photoresist SU-83050 is used as the mask material, and the substrate 1 of the surface-polished high-purity wafer-grade metal tungsten is cleaned with acetone alcohol and dried, and then coated with a layer of Negative-tone photoresist 2 with a thickness of 60 μm, such as figure 1 (a) shown. After the photoresist 2 is pre-baked, exposed, post-baked, and developed to be patterned, an etching mask 2' with a desired etching pattern is obtained, see figure 1 (b).

[0022] 2. Etching:

[0023] Trion Technology Mini...

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Abstract

The invention discloses a method for etching a metal tungsten material, which is characterized in that: an etching mask is formed on the metal tungsten material, and then a high-density plasma (such as inductively coupled plasma, transformer coupled plasma and the like) dry etching process is adopted to produce high-density and high-energy ions and free radicals and to realize the high-speed and anisotropic etching of the metal tungsten material. The etching speed can reach 2.95 micrometers per minute, and the verticality of an etching-resulted side wall can reach 60 degrees. Based on the method, a metal tungsten underlay substrate can be used as a main body material for preparing micro-electro-mechanical system (MEMS) devices.

Description

technical field [0001] The invention belongs to the technical field of micro-electro-mechanical systems (MEMS), in particular to a method for anisotropic, high-speed dry etching of metal tungsten body materials. Background technique [0002] In the processing and manufacturing of MEMS devices, single crystal silicon materials are usually used as traditional structural substrate materials, and single crystal silicon materials have some inherent defects, such as high brittleness and poor impact resistance; compared with metal materials, their conductivity is poor, and their resistivity is relatively low. Higher; thermal stability is relatively poor, and Young's modulus will change significantly when it exceeds 600 ° C, which is not suitable for application under high temperature conditions, which affects the application range of the device. [0003] Metal tungsten material is the metal with the highest melting point in nature (3410°C), and it has the characteristics of high st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 陈兢胡佳张轶铭陈书慧李男男李天宇
Owner 苏州含光微纳科技有限公司
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