188 results about "Trimethylaluminium" patented technology

The invention relates to a preparation method of trimethylaluminium. The method comprises steps as follows: (1) magnalium and haloalkane have a contact reaction in the presence of an ether solvent and in the inert atmosphere to produce a trimethylaluminium ether complex; (2) the trimethylaluminium ether complex and an amine and/or phosphine compound with the high boiling point have a contact reaction to produce a trimethylaluminium amine complex and/or a trimethylaluminium phosphine complex; (3) the complexes obtained in Step (2) are decomposed. With the adoption of the preparation method, the yield and the purity of the trimethylaluminium can be significantly increased, the yield of the trimethylaluminium can be higher than 80%, the purity can be 99.9999%, besides, a reaction kettle used in the method can be used as an evaporation kettle, the technology and equipment are simplified, the reaction process is easy to control, the prepared product can be separated from raw materials and byproducts more easily, the method is very applicable to industrial production, in addition, the byproducts can be used for synthesizing aluminum sulfate, and almost no waste is produced.

The invention relates to a preparation method of high-purity trimethyl aluminum, belonging to the technical field of preparation of compounds of Group 3 metals in the periodic table. The preparation method comprises the following steps: (1) preparing a trimethyl aluminum crude product by using aether as a solvent; and (2) purifying the trimethyl aluminum crude product obtained in the step (1), wherein a first chromatographic column is utilized to purify the trimethyl aluminum crude product and adopts grafted silicon dioxide as a stationary phase, and the grafted silicon dioxide is silicon dioxide with tri-n-octyl amine grafted on the surface. The preparation method adopts the two steps of synthesis and separation to obtain the trimethyl aluminum of which the purity can reach 6N. The purification method combines the solid-liquid separation means to load the specific complexant onto the silicon dioxide; and thus, the method is simple to operate and further enhances the purification effect.

Adhesive layers residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Adhesion layers are formed by depositing a precursor layer of metal-containing material (e.g., material containing Al, Ti, Ca, Mg, etc.) over an exposed copper line, and converting the precursor layer to a passivated layer (e.g., nitridized layer). For example, a substrate containing exposed copper line having exposed Cu—O bonds is contacted with trimethylaluminum to form a precursor layer having Al—O bonds and Al—C bonds on copper surface. The precursor layer is then treated to remove residual organic substituents and to form Al—N, Al—H bonds or both. The treatment can include direct plasma treatment, remote plasma treatment, UV-treatment, and thermal treatment with a gas such as NH₃, H₂, N₂, and mixtures thereof. A dielectric diffusion barrier layer is then deposited.

The present invention provides an epitaxial structure of an ultraviolet LED with an aluminum nitride film and a growth method of the aluminum nitride film. The growth method of the aluminum nitride film includes the following steps that: 1) a metal layer is grown on a substrate; 2) annealing treatment is performed on the substrate, so that the metal layer can form a metal ball-shaped object layer;3) etching treatment is performed on the substrate, so that a pitted substrate can be formed; 4) when temperature rises to 600 to 1200 DEG C, trimethylaluminum and ammonia gas are introduced into a reaction chamber, so that a buffer growth layer can be to grown; 5) when temperature rises to 1250 to 1450 DEG C, first growth mode/second growth mode alternate cyclic growth is carried out, so that anintermediate-state aluminum nitride layer can be formed; and 6) when temperature drops to 1100 to 1250 DEG C, the trimethylaluminum and ammonia are introduced into the aluminum nitride layer, so thatthird growth mode growth can be performed. The aluminum nitride film obtained by using the method has good crystal quality; and the surface cracks of the aluminum nitride film can be reduced.

The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning & passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al₂O₃ dielectric. This method includes: use a new-type of sulfur passivant to react with the autologous oxide on the GaAs surface to clean it and generate a passive sulfide film to separate the GaAs from the outside environment, thus preventing the GaAs from oxidizing again; further cleaning the residuals such as autologous oxides and sulfides on the GaAs surface through the pretreatment reaction of the reaction source trimethyl aluminum (TMA) of the Al₂O₃ ALD with the GaAs surface, and then deposit high-quality Al₂O₃ dielectric through ALD as the gate dielectric which fully separates the GaAs from the outside environment. The present invention features a simple process and good effects, and can provide preconditions for manufacturing the GaAs devices.

The invention relates to a homogeneous epitaxial growth method of a high-quality aluminum nitride film. The homogeneous epitaxial growth method of the high-quality aluminum nitride film based on an aluminum nitride substrate is carried out in MOCVD equipment, and comprises the following steps: selecting an aluminum nitride substrate; putting the substrate into an MOCVD reaction cavity, and heatingto bake the substrate; introducing ammonia gas (NH3) to protect the substrate, further increasing the growth temperature, introducing trimethylaluminum (TMAl) and ammonia gas (NH3) at the same time,and growing a first aluminum nitride (AlN) optimization layer at a low growth rate; and then reducing the growth temperature, and increasing the growth rate to grow a second high-quality AlN epitaxialfilm. The method has the advantages that the method is simple and feasible, the growth period is short, the material performance is good, and the method is an effective solution for realizing high-quality and low-cost growth of the AlN epitaxial film.

Provided is a method of removing native oxide from a substrate, the method including exposing the substrate to trimethyl aluminum (TMA) or dicyclopentadienyl magnesium (MgCp₂) for a predetermined time.

The invention relates to a fluoride phosphor powder coating method based on an atomic layer deposition technology, and relates to material surface treatment. The method comprises the following steps:1) carrying out pre-treatment on fluoride phosphor powder and placing the treated fluoride phosphor powder into a deposition chamber; 2) adjusting the temperature of the deposition chamber; 3) introducing trimethyl aluminum into the deposition chamber with nitrogen as a carrier gas, and purging the mixture; 4) stopping loading of trimethyl aluminum, introducing nitrogen gas into that deposition chamber, and purging the mixture; 5) stopping introduction of nitrogen gas, introducing ozone into the deposition chamber, and purging the mixture; 6) stopping introduction of ozone, introducing nitrogen gas into the deposition chamber, and purging the mixture; 7) repeating the steps 3) to 6); and 8) stopping introducing of nitrogen gas and naturally cooling the deposition chamber to obtain the coated fluoride phosphor powder. The reactant purging time is adjusted according to the repetition times so that the total reaction time does not exceed 2h, the temperature of the atomic layer depositioncoating operation is 50-90 DEG C and the time does not exceed 2h, and the coating adopts trimethyl aluminum and ozone as precursors.

The invention discloses a method for growing a GaN-based luminous crystal film by metal organic chemical vapor deposition. The method is characterized in that: trimethylborine or trimethylaluminium are doped in a raw material formula of the GaN crystal film in proportion, and boron or aluminum enter a GaN crystal lattice in a mode of trivalent ion in a growing process to regulate the ionic radius difference between rare-earth ions and Ga3+; the molar ratio of the raw material formula is that: Ga (CH3)3 to rare-earth organic complex to A(CH3)3 is (1-x-y):x:y, wherein the rare-earth organic complex is Re(TMHD)3 or Re (i-PrCp)3 taking rare-earth element Re as a core; A represents III group element boron or aluminum; x is more than or equal to 0.1 percent and less than or equal to 10.0 percent; and y is more than or equal to 0.1 time of the x and less than or equal to x. Because the organic complex of the III group element boron or aluminum and the rare-earth organic complex are co-doped in a certain proportion, the method can improve lattice distortion of the GaN crystal film caused by larger radius mismatch between Re3+ and Ga3+ to a large extent so as to improve the luminous performance of the GaN crystal film.

The invention discloses a preparation method of biological packing for wastewater treatment and belongs to the field of water treatment. According to the preparation method, 10-undecen-1-ol and propylene are taken as raw materials, polar monomers trimethylaluminium and triisobutyl aluminium, methylaluminoxane and 2,6-di-tert-butyl-4-methylphenol are added and taken as promoters, ferrocene is takenas a main catalyst, a polymerization reaction is performed, oxygen atoms in enol are shielded by larger substituent groups on alkyl aluminium, catalyst poisoning caused by the fact that lone pair electrons on the oxygen atoms coordinate with an active center is prevented, protected undecylenyl alcohol monomers are copolymerized with propylene to obtain a polymer, hydroxyl is introduced into the polymer, the polymer has better hydrophilic performance and better binding property with wastewater in wastewater treatment, and water treatment efficiency is improved. The problem that the treatment effect is affected due to the fact that current packing is poor in affinity when bound with microorganisms and is prone to balling is solved.