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Homogeneous epitaxial growth method of high-quality aluminum nitride film

A technology of homoepitaxial and growth methods, which is applied in the field of homoepitaxial growth of high-quality aluminum nitride films, which can solve the problems of large consumption of reagents, low lateral growth rate, polycrystalline growth of epitaxial layers, etc., and achieve material performance Good, low-cost growth, short growth cycle

Inactive Publication Date: 2020-05-22
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The diffusion of Al atoms on the growth surface is limited, the lateral growth rate is very low, and it is difficult to form two-dimensional layered growth; (2) Al source TMA and NH in MOVPE growth 3 There is a strong pre-reaction between them. The pre-reaction will not only consume a large amount of reactants, but also the formed solid polymer may be deposited on the surface of the sample and cannot be fully decomposed, resulting in the doping of impurities in the epitaxial layer, and even the formation of epitaxial layer. polycrystalline growth

Method used

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  • Homogeneous epitaxial growth method of high-quality aluminum nitride film
  • Homogeneous epitaxial growth method of high-quality aluminum nitride film
  • Homogeneous epitaxial growth method of high-quality aluminum nitride film

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Embodiment 1

[0032] Such as figure 1 As shown, a homoepitaxial growth method of a high-quality aluminum nitride film comprises the following steps:

[0033] 1) Select a substrate 1, which is a (0001) plane single crystal aluminum nitride substrate material;

[0034] 2) Put the substrate into the MOCVD system and pass H 2 , the reaction chamber pressure is 200torr, heated at 1100°C for 10 minutes to clean the substrate surface, remove the surface oxide layer and contamination;

[0035] 3) The reaction chamber is protected with ammonia gas, and the temperature of the reaction chamber is raised to 1250 °C, H 2 As a carrier gas, the pressure of the reaction chamber is 50 torr, and trimethylaluminum is introduced at the same time, and the aluminum nitride optimization layer 2 is epitaxially grown at a V / III of 3000, with a growth rate of 300nm / h and a thickness of 100nm;

[0036] 4) Lower the temperature to 1150°C, H 2 As a carrier gas, reduce the pressure of the reaction chamber to 30torr,...

Embodiment 2

[0038] A method for homoepitaxial growth of a high-quality aluminum nitride film, characterized in that it comprises the steps of:

[0039] 1) Select a substrate 1, which is a (0001) plane single crystal aluminum nitride substrate material;

[0040] 2) Put the substrate into the MOCVD system and pass H 2 , the pressure of the reaction chamber is 100torr, heated at 1200°C for 3 minutes to clean the surface of the substrate and remove the surface oxide layer and contamination;

[0041] 3) The reaction chamber is vented with ammonia gas for protection, and the temperature of the reaction chamber is raised to 1350°C. 2 As a carrier gas, the pressure of the reaction chamber is 100 torrr, and trimethylaluminum is introduced at the same time, and the aluminum nitride optimization layer 2 is epitaxially grown with V / Ⅲ as 2000, the growth rate is 200nm / h, and the thickness is 20nm;

[0042] 4) Lower the temperature to 1250°C, H 2 As a carrier gas, reduce the pressure of the reaction...

Embodiment 3

[0044] A method for homoepitaxial growth of a high-quality aluminum nitride film, characterized in that it comprises the steps of:

[0045] 1) Select a substrate 1, which is a (0001) surface aluminum nitride-sapphire composite substrate;

[0046] 2) Put the substrate into the MOCVD system and pass H 2 , the pressure of the reaction chamber is 100torr, heated at 1200°C for 5 minutes to clean the surface of the substrate and remove the surface oxide layer and contamination;

[0047] 3) The reaction chamber is protected with ammonia gas, and the temperature of the reaction chamber is raised to 1250 °C, H 2 As a carrier gas, the pressure of the reaction chamber is 100 torrr, and trimethylaluminum is introduced at the same time, and the aluminum nitride optimization layer 2 is epitaxially grown at V / Ⅲ as 2000, the growth rate is 250nm / h, and the thickness is 50nm;

[0048] 4) Lower the temperature to 1200°C, H 2 As a carrier gas, reduce the pressure of the reaction chamber to 50...

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Abstract

The invention relates to a homogeneous epitaxial growth method of a high-quality aluminum nitride film. The homogeneous epitaxial growth method of the high-quality aluminum nitride film based on an aluminum nitride substrate is carried out in MOCVD equipment, and comprises the following steps: selecting an aluminum nitride substrate; putting the substrate into an MOCVD reaction cavity, and heatingto bake the substrate; introducing ammonia gas (NH3) to protect the substrate, further increasing the growth temperature, introducing trimethylaluminum (TMAl) and ammonia gas (NH3) at the same time,and growing a first aluminum nitride (AlN) optimization layer at a low growth rate; and then reducing the growth temperature, and increasing the growth rate to grow a second high-quality AlN epitaxialfilm. The method has the advantages that the method is simple and feasible, the growth period is short, the material performance is good, and the method is an effective solution for realizing high-quality and low-cost growth of the AlN epitaxial film.

Description

technical field [0001] The invention relates to a homoepitaxial growth method of a high-quality aluminum nitride film, which belongs to the technical field of semiconductors. Background technique [0002] Group III nitrides (including gallium nitride, aluminum nitride, aluminum gallium nitride, indium nitride, indium gallium nitride, indium aluminum gallium nitride, etc.), the band gap can be adjusted between 0.7eV-6.2eV, Covers the entire mid-infrared, visible, and ultraviolet bands. In optoelectronic applications, such as white light diodes (LEDs), blue lasers (LDs), and ultraviolet detectors, they have achieved important applications and developments. Aluminum nitride (AlN), as a direct bandgap semiconductor with a wide bandgap (6.2eV), is an important blue light and ultraviolet luminescent material, and is used in optoelectronic devices such as ultraviolet detectors, ultraviolet light-emitting diodes and ultraviolet lasers. Important applications, especially essential ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B25/10C30B25/16C30B25/20
CPCC30B25/10C30B25/16C30B25/20C30B29/403
Inventor 罗伟科李忠辉
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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