47 results about "Radiation tolerance" patented technology

Subwavelength random and periodic microscopic structures are used to enhance light absorption and tolerance for ionizing radiation damage of thin film and photodetectors. Diffractive front surface microscopic structures scatter light into oblique propagating higher diffraction orders that are effectively trapped within the volume of the photovoltaic material. For subwavelength periodic microscopic structures etched through the majority of the material, enhanced absorption is due to waveguide effect perpendicular to the surface thereof. Enhanced radiation tolerance of the structures of the present invention is due to closely spaced, vertical sidewall junctions that capture a majority of deeply generated electron-hole pairs before they are lost to recombination. The separation of these vertical sidewall junctions is much smaller than the minority carrier diffusion lengths even after radiation-induced degradation. The effective light trapping of the structures of the invention compensates for the significant removal of photovoltaic material and substantially reduces the weight thereof for space applications.

CMOS transistors are configured to operate as either a redundant, SEU-tolerant, positive-logic, cross-coupled Nor Gate SR-flip flop or a redundant, SEU-tolerant, negative-logic, cross-coupled Nand Gate SR-flip flop. The register can operate as a memory, and further as a memory that can overcome the effects of radiation. As an SR-flip flop, the invention can be altered into any known type of latch or flip-flop by the application of external logic, thereby extending radiation tolerance to devices previously incapable of radiation tolerance. Numerous registers can be logically connected and replicated thereby being electronically configured to operate as a redundant circuit.

Subwavelength random and periodic microscopic structures are used to enhance light absorption and tolerance for ionizing radiation damage of thin film and photodetectors. Diffractive front surface microscopic structures scatter light into oblique propagating higher diffraction orders that are effectively trapped within the volume of the photovoltaic material. For subwavelength periodic microscopic structures etched through the majority of the material, enhanced absorption is due to waveguide effect perpendicular to the surface thereof. Enhanced radiation tolerance of the structures of the present invention is due to closely spaced, vertical sidewall junctions that capture a majority of deeply generated electron-hole pairs before they are lost to recombination. The separation of these vertical sidewall junctions is much smaller than the minority carrier diffusion lengths even after radiation-induced degradation. The effective light trapping of the structures of the invention compensates for the significant removal of photovoltaic material and substantially reduces the weight thereof for space applications.

A method of designing a layout of an integrated circuit for increased radiation tolerance by ensuring that any critical components (those deemed particularly sensitive to radiation-induced soft errors) are at spacings greater than a predetermined threshold based on particle migration within the silicon substrate. The method starts with an initial placement, identifies the objects for which radiation tolerance is desired, determines whether any of those objects and, if so, moves the relevant objects to increase the spacing. An exemplary threshold for contemporary CMOS device technologies is 5 μm. The objects can be moved by vertically and / or horizontally shifting away from a reference point of the integrated circuit. The critical objects may include triplicated (redundant) structures, clock control latches, or a reset bit. The method can be used in conjunction with other placement optimizations such as area, power and timing.

Radiation hardened NMOS devices suitable for application in NMOS, CMOS, or BiCMOS integrated circuits, and methods for fabricating them. A device includes a p-type silicon substrate, a field oxide surrounding a moat region on the substrate tapering through a bird's beak region to a gate oxide within the moat region, a heavily-doped p-type guard region underlying at least a portion of the bird's beak region and terminating at the inner edge of the bird's beak region, a gate crossing the moat region, and n-type source and drain regions spaced by a gap from the inner edge of the guard region. A variation of a local oxidation of silicon process is used with an additional bird's beak implantation mask as well as minor alterations to the conventional moat and n-type source / drain masks. The resulting devices have improved radiation tolerance while having a high breakdown voltage and minimal impact on circuit density.

This independent double-gated transistor architecture creates a MOSFET, JFET or MESFET in parallel with a JFET. Its two gates may be configured to provide a four-terminal device for independent gate control, a floating gate device, and a double-gate device. First and second insulating spacers are disposed on opposing sides of the top gate with the first spacer between the source and the top gate and the second spacer between the drain and the top gate. Source and drain extensions extend proximate to the spacers and couple to the channel. The spacers shield the channel from the field effect of the source and drain and further resist compression of the channel by the source and drain. Truly independent control of the two gates makes possible many 2-, 3- and 4-terminal device configurations that may be dynamically reconfigured to trade off speed against power. The resulting transistors exhibit inherent radiation tolerance.

A logic book for a programmable device such as an application-specific integrated circuit (ASIC) achieves improved radiation tolerance by providing notches in an implant well between adjacent transistors and fills the notches with complementary well regions that act as a barrier to charge migration. For example, a row of n-type field effect transistors (NFETs) is located in a Pwell region, while a row of p-type transistors is located in an Nwell region with portions of the Nwell region extending between the NFETs. More complicated embodiments of the present invention include embedded well islands to provide barriers for adjacent transistors in both rows of the book.

This invention provides a strain for producing 2, 3-butanediol, and its application as anti-UV and anti-oxidation agent in cosmetics. The strain with strong UV tolerance is separated from mangrove, and can produce 2, 3-butanediol. The strain has such advantages as wide nutrition range, short culture period, low cost and high yield. 2, 3-butanediol has good anti-UV and anti-oxidation effects, and can eliminate active oxygen free radicals and block lipid peroxidation, thus can be used as anti-UV and anti-oxidation agent in cosmetics.

A method for designing integrated circuits uses clock signal interleaving to reduce the likelihood of a soft error arising from an upset in a clock distribution network. At least two circuits in a circuit description are identified as being sensitive to radiation, and different clock distribution nodes are assigned to the two circuits. Several exemplary implementations are disclosed. The second circuit may be a redundant replica of the first circuit, such as a reset circuit. The first and second circuits may be components of a modular redundant circuit such as a triple modular redundancy flip-flop. The first circuit may include a set of data bits for an entry of a storage array such as a register or memory array, and the second circuit may include a set of check bits associated with the entry.

Radiation hardened NMOS devices suitable for application in NMOS, CMOS, or BiCMOS integrated circuits, and methods for fabricating them. A device includes a p-type silicon substrate, a field oxide surrounding a moat region on the substrate tapering through a Bird's Beak region to a gate oxide within the moat region, a heavily-doped p-type guard region underlying at least a portion of the Bird's Beak region and terminating at the inner edge of the Bird's Beak region, a gate included in the moat region, and n-type source and drain regions spaced by a gap from the inner edge of the Bird's Beak and guard regions. A variation of minor alterations to the conventional moat and n-type source / drain masks. The resulting devices have improved radiation tolerance while having a high breakdown voltage and minimal impact on circuit density.

A method of designing a layout of an integrated circuit for increased radiation tolerance by ensuring that any critical components (those deemed particularly sensitive to radiation-induced soft errors) are at spacings greater than a predetermined threshold based on particle migration within the silicon substrate. The method starts with an initial placement, identifies the objects for which radiation tolerance is desired, determines whether any of those objects and, if so, moves the relevant objects to increase the spacing. An exemplary threshold for contemporary CMOS device technologies is 5 μm. The objects can be moved by vertically and / or horizontally shifting away from a reference point of the integrated circuit. The critical objects may include triplicated (redundant) structures, clock control latches, or a reset bit. The method can be used in conjunction with other placement optimizations such as area, power and timing.

An operation adjustment method of an SOI device comprises steps of: (a) obtaining a drain current-substrate bias voltage characteristic of an NMOS transistor for a source-gate voltage of 0V; (b) obtaining a lowest substrate bias voltage which turns on the NMOS transistor from the drain current-substrate bias voltage characteristic; (c) determining an upper limit of a substrate bias voltage of a PMOS transistor as a voltage obtained by subtracting a built-in potential of a pn junction from the lowest substrate bias voltage; and (d) determining the substrate bias voltage of the PMOS transistor as a positive voltage lower than the upper limit. Reduction in the power consumption and maintenance of the radiation tolerance are both achieved for the SOI device.

The invention discloses a radiotherapy tolerance lung cancer cell line, a construction method thereof and an application of the cell line. The radiotherapy tolerance lung cancer cell line is named asa human lung adenocarcinoma radiation tolerance cell strain PC9-RR, and the collection number is CGMCC No. 14314. The radiotherapy tolerance lung cancer cell line comprises radiotherapy tolerance cells acquired by performing repeated X-ray irradiation and culture on a human lung adenocarcinoma cell strain PC9, is strong and stable in radiotherapy tolerance and has a good application prospect in terms of serving as a cell model for lung cancer radiotherapy resistance mechanism research and the like.

A method for designing integrated circuits uses clock signal interleaving to reduce the likelihood of a soft error arising from an upset in a clock distribution network. At least two circuits in a circuit description are identified as being sensitive to radiation, and different clock distribution nodes are assigned to the two circuits. Several exemplary implementations are disclosed. The second circuit may be a redundant replica of the first circuit, such as a reset circuit. The first and second circuits may be components of a modular redundant circuit such as a triple modular redundancy flip-flop. The first circuit may include a set of data bits for an entry of a storage array such as a register or memory array, and the second circuit may include a set of check bits associated with the entry.

A logic book for a programmable device such as an application-specific integrated circuit (ASIC) achieves improved radiation tolerance by providing transistors of the same doping type in different well regions that are physically isolated by intervening well regions with complementary doping. For example, n-type field effect transistors (NFETs) may be located in two outer rows of the book with separate Pwell regions, while p-type transistors are located in two inner rows of the book sharing a common Nwell region. Since the NFETs in separate wells are physically isolated from each other, a circuit structure which uses two NFETs in the two outer rows is much less likely to suffer multiple upsets from a single radiation strike. More complicated embodiments of the present invention include additional transistor rows in the stack with isolated Nwells and Pwells.

The invention discloses a circuit performance reliability analysis method based on Saber platform modeling and simulation. Through parameter scanning, the method can analyze the influence of environmental temperature change, storage time increase, and even radiation on the function and performance of the circuit system. The weakness of temperature tolerance, storage tolerance and radiation tolerance design can be found by degradation analysis. The method can analyze the circuit performance degradation under different ambient temperature, and expose the reliability weakness in the circuit design process. The trend of output performance degradation caused by long-time operation or storage can be analyzed, and the time of output performance degradation over-error fault can be given. The method can also provide a basis for avoiding or eliminating radiation effects, and give corresponding design optimization recommendations.

The invention provides a use of CX4945 for preparation of a drug having a reversal effect on gastric cancer cisplatin-resistant radiation tolerance, is used in preparation of the gastric cancer cisplatin-resistant radiation tolerance reversal drug, and provides the CX4945 as a gastric cancer cisplatin-resistant radiation tolerance reversal agent applied in clinic; the CX4945 can overcome the gastric cancer cisplatin-resistant cell radiation tolerance, enhances radiosensitivity, reduces the radiotherapy killing dose, alleviates the response of radiotherapy, improves the curative effect of gastric cancer radiotherapy, and provides a better method for treatment of gastric cancer.

Methods for improving the performance and lifetime of irradiated photovoltaic cells are disclosed, whereby Group-V elements, and preferably nitrogen, are used to dope semiconductor GaAs-based subcell alloys.

Systems and methods for providing peak current mode control (PCMC) for power converters using discrete analog components. Peak current mode control functionality for latching, set, reset, clocking and slope compensation is provided via available analog components that provide improved performance, design flexibility, reliability, and radiation tolerance. Discrete analog components may include analog comparators, resistors, capacitors, diodes, etc.

The invention provides a method and device for nondestructively screening radiation tolerances of resistors; the method comprises: acquiring pre-radiation resistance value and 1 / f noise voltage power spectrum amplitude of a resistor acting as a random sample; acquiring post-radiation resistance value of the resistor acting as the random sample; calculating pre-radiation and post-radiation resistance drift based on the pre-radiation resistor resistance value and post-radiation resistor resistance value; using the 1 / f noise voltage power spectrum amplitude as an information parameter and the resistance drift as a radiation performance parameter to establish a multiple linear regression equation, and calculating a coefficient vector in the multiple linear regression equation; establishing a nondestructive screening regression prediction equation between the information parameter and the radiation performance parameter based on the coefficient vector; using the nondestructive screening regression prediction equation to screen other resistors in a same lot. The method and device can provide accurate and efficient radiation tolerance testing and screening for components at the premise of not destructing the resistors.

The invention discloses an electromagnetic effect-increasing integral control cable network, comprising a plurality of wire bundles which form the cable network, wherein, the concentrated part of a plurality of wire bundles is integrally coated by a first coating layer, the parts of a plurality of wire bundles extending out of the two ends of the first coating layer used for being connected with other wires are respectively coated with a second coating layer. A plurality of wire bundles are wire bundles set with different cores, different sections and different structures according to different transmission signals; the first coating layer and the second coating layer are provided with the same structures and the same materials; the first coating layer and the second coating layer comprise a metallized carbon fiber layer, an insulating medium layer, a silver coating layer, a copper coating layer, a nickel coating layer and a sheath from the inside to outside; and the metallized carbon fiber layer uses copper coating metallized carbon fiber, silver-copper coating metallized carbon fiber or nickel-copper coating metallized carbon fiber. The invention ensures that the anti-electromagnetic pulse capacity and radiation tolerance of cables can be improved, the small size, light weight and inflaming retarding can be realized, and the product reliability is improved, thus satisfying the demands of complex environment in the aviation field.

A crystal oscillator with improved tolerance to radiation such as X-rays includes: a container body; a quartz crystal blank accommodated in a first recess formed on one main surface of the container body and hermetically encapsulated in the first recess by a metal cover; and an IC chip that integrates electronic circuits including at least an oscillator circuit using the crystal blank and is accommodated in the second recess formed on the other main surface of the container body. The IC chip is fixed to the bottom surface of the second recess by flip-chip bonding such that a circuit formation plane of the IC chip is opposed to the bottom surface of the second recess. A radiation protective film is formed on the main surface other than the circuit formation plane of the IC chip.

The invention provides an application of a CpG-ODN 7909 sequence to the preparation of a drug, i.e., a radiosensitizer for relieving tumor cell radiation tolerance. The CpG-ODN 7909 sequence is 5'-TCGTCGTTTTGTCGTTTTGTCGTT-3' and takes non-methylated cytosine guanine dinucleotide as a core. The CpG-ODN 7909 sequence is proved to be capable of remarkably reducing the growth speed of a radiation-resistant cell system, delaying the cell period, enhancing the radiation sensibility and lowering the radiation tolerance with the assistance of radiation, so that the CpG-ODN 7909 sequence can be used as the radiosensitizer to treat tumor with the assistance of radiation, can be used for achieving a favorable treating effect and has a wide application prospect.

The invention discloses a construction method and application of a human prostate cancer radiation tolerance cell strain. The method comprises the following steps: taking a human prostate cancer cell strain DU145 in an exponential growth phase, and inoculating the human prostate cancer cell strain DU145 into a 60mm culture dish according to the density of 5 * 10<5> cells per dish; when the cells grow to 60%, carrying out X-ray irradiation, wherein the irradiation dose is 4Gy; continuously culturing the cells until the density reaches 90%, digesting with pancreatin, counting, and inoculating into a 60mm culture dish according to the density of 5 * 10 <5> cells per dish; repeating the steps of irradiation and culture, and continuing stable passage for 30 days when the accumulated irradiation dose of the cells reaches 60Gy; and after the human prostate cancer radiation-tolerant cell strain which grows stably, is subjected to passage and is resuscitated is obtained, cryopreservingthe cells in a liquid nitrogen tank in time. Small-dose X-rays are selected for cell irradiation, and the method is characterized in that the clinical radiation treatment process is simulated, the irradiation dose is small, the cell survival rate is high, and the cell drug resistance is stable.

The invention relates to an in-situ characterization method of a bonding interface state, in particular to an in-situ characterization method of a bonding interface state under an irradiation condition. The invention aims to solve the technical problems that in the prior art, a radiographic inspection method depends on large special equipment such as a radiation source, the expansion of a servicesite is limited by space, the use convenience is insufficient, and when an ultrasonic flaw detection method is adopted, the requirement on personnel protection is high and the requirement on long-termuse is difficult to meet under an irradiation condition, and when structural dynamics analysis is adopted, the radiation tolerance of a sensor and an adhesive for bonding the sensor needs to be specially researched, and provides an in-situ characterization method for the bonding interface state under the irradiation condition. According to the method, nuclear power equipment related to irradiation conditions and the like are taken as main application objects, and non-contact, unmanned, simple, safe, reliable and timely bonding interface state characterization is realized through the steps ofbonding interface sampling, typical state calibration, service field non-contact in-situ detection and the like.

The invention relates to a preparation method of an elastomer-based polypropylene insulating material with high partial discharge tolerance, which is characterized in that by adding an octylene elastomer, the elasticity modulus of the polypropylene insulating material is reduced, the polypropylene insulating material is easy to deform under the bombardment of partial discharge high-energy particles, and the energy of charged particles is relieved; the partial discharge tolerance of polypropylene is improved; the added octylene elastomer has better ultraviolet radiation tolerance, and can relieve the associated ultraviolet radiation degradation phenomenon in the partial discharge process, so that the partial discharge tolerance of polypropylene is improved; the trap depth of the polypropylene insulating material added with the octylene ethylene elastomer is reduced, dissipation of charges accumulated on the surface of polypropylene is accelerated, the proportion of direct bombardment of charged particles on the surface of the polypropylene material is weakened, and then the partial discharge tolerance of polypropylene is improved.

Disclosed is a device structure using an inverse-mode cascoded Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) beneficial in applications requiring radiation hardened circuitry. The device comprises a forward-mode common-emitter HBT cascoded with a common-base inverse-mode HBT, sharing a common sub-collector. An exemplary device was measured to have over 20 dB of current gain, and over 30 dB of power gain at 10 GHz, thus demonstrating the use of these circuits for high-frequency circuit applications. In addition, the radiation response and voltage limits were characterized and showed to have negligible performance effects in typical operating conditions. Due to the unique topology, the disclosed device has the benefit of being a more compact cascode design and the additional benefit of providing significantly improved radiation tolerance.