Thin-film solar cells and photodetectors having enhanced optical absorption and radiation tolerance

Abstract

Subwavelength random and periodic microscopic structures are used to enhance light absorption and tolerance for ionizing radiation damage of thin film and photodetectors. Diffractive front surface microscopic structures scatter light into oblique propagating higher diffraction orders that are effectively trapped within the volume of the photovoltaic material. For subwavelength periodic microscopic structures etched through the majority of the material, enhanced absorption is due to waveguide effect perpendicular to the surface thereof. Enhanced radiation tolerance of the structures of the present invention is due to closely spaced, vertical sidewall junctions that capture a majority of deeply generated electron-hole pairs before they are lost to recombination. The separation of these vertical sidewall junctions is much smaller than the minority carrier diffusion lengths even after radiation-induced degradation. The effective light trapping of the structures of the invention compensates for the significant removal of photovoltaic material and substantially reduces the weight thereof for space applications.

Description

RELATED CASES [0001] The present patent application claims the benefit of Provisional Patent Application Ser. No. 60 / 332,777 filed on Nov. 16, 2001 for “Method Of Deeply Etched Subwavelength Structures For Enhanced Optical Absorption In Solar Cells And Photodetectors.”STATEMENT REGARDING FEDERAL RIGHTS [0002] This invention was made in part with government support under Contract No. F29601-00-C-0158 between the U.S. Missile Defense Agency and Gratings Incorporated, a New Mexico corporation. The government has certain rights in the invention.FIELD OF THE INVENTION [0003] The present invention relates generally to solar cells and photodetectors and, more particularly, to enhancement of absorption and tolerance to ionizing radiation, resulting from surface random and periodic microstructures formed from the material of the solar cell or photodetector for thin film (<50 μm) solar cells and photodetectors. BACKGROUND OF THE INVENTION [0004] Since its inception more than fifty years ag...

AI Technical Summary

Benefits of technology

"The present invention provides a method for forming thin film solar cells and photodetectors with increased light absorption and radiation tolerance. This is achieved by forming a plurality of macroscopic features on a doped film, attaching an electrical contact to the film, and doping the surfaces of the features to create a p-n junction. Additionally, a microscopic grating structure is generated on the film, which further enhances light absorption and increases the tolerance of the device. The invention also includes a photovoltaic device comprising the doped film and the macroscopic features."

Problems solved by technology

Silicon (Si) solar cells for use in space environments have not experienced comparable improvements and, as a result, have lost a significant market share to the compound semiconductor multi-junction solar cell technology.

Applicability of these texturing schemes to thin wafer and films (˜20-50 μm) is limited due to their large dimensions and preferential (100) crystal etching mechanisms.

Heine and Morf teach away from the use of a front surface grating because of surface passivation issues.

The structures employed were macroscopic (>> optical wavelengths) and the observed improvements were marginal, presumably, the result of a lack of enhanced near-IR absorption.

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