119 results about "Quasicrystal" patented technology

Composite coating compositions, composite metallic coatings derived from these compositions, and methods of forming the composite coating compositions and composite metallic coatings, wherein the compositions and coatings comprise particles of at least one quasicrystalline metal alloy and at least one elemental metal. The methods include electrocodepositing suspended quasicrystalline metal alloy particles and dissolved metal ions onto a substrate. Preferably, the substrate is disposed in an aqueous bath containing at least one dissolved metal ion species and at least one suspended quasicrystalline metal alloy powder species. The compositions and coatings enhance the wear, friction, hardness, corrosion, and non-stick characteristics of the substrate.

According to one aspect of the present invention, a light emitting diode (LED) structure including an active core layer and at least one substrate layer having a first refractive index, comprises a 2-dimensional photonic quasicrystal in the structure, the photonic quasicrystal comprising an array of regions having a second refractive index, the array exhibiting long range order but short range disorder. The long range order is associated with diffractive properties of the structure and gives rise to uniform-far field diffraction patterns from the LED. The present invention enjoys the benefit of improved light extraction from LEDs without undesirable far field illumination patterns.

The invention discloses a quasicrystal patterning transparent film electrode used for an intelligent light modulation film and a preparation method for the same, and a related intelligent modulation film and a preparation method for the same. The quasicrystal patterning transparent film electrode is a graphene / quasicrystal patterning metal mesh composite transparent conductive film electrode; the graphene / quasicrystal patterning metal mesh composite transparent conductive film electrode consists of a substrate, a quasicrystal patterning metal mesh and a graphene layer; the intelligent light modulation films consists of two graphene / quasicrystal patterning metal mesh composite transparent conductive film electrodes which are opposite in a staggermanner and a light ray modulation unit clamped between the two graphene / quasicrystal patterning metal mesh composite transparent conductive film electrodes, wherein the light ray modulation layer is doped with a backing, the stagger portion is provided with a lead out electrode, and the device is packaged by a packaging material. The graphene / quasicrystal patterning metal mesh composite transparent conductive film electrode can effectively eliminate the optical effect produced by the metal grid in the light modulation film and enables the light modulation film to be applied in the light modulation device having higher requirements.

The invention provides a high-strength magnesium alloy which is improved in high-temperature strength without using any expensive rare earth element with cost reduction and a process for the production of the alloy. A high-strength magnesium alloy represented by the composition formula: Mg100-(a+b)ZnaXb(wherein X is at least one member selected from among Zr, Ti and Hf and a and b are contents of Zn and X respectively as represented in at% and satisfy the relationships (1), (2) and (3): (1) a / 28 = b = a / 9, (2) 2 < a < 10, and (3) 0.05 < b < 1.0), wherein Mg-Zn-X quasicrystals and approximants thereof in theform of fine particles are dispersed in a Mg mother phase; and a process for the production of the high-strength magnesium alloy which comprises melting Mg in an inert atmosphere to form molten Mg, adding Mg-Zn-X quasicrystals (wherein X is at least one of Zr, Ti and Hf) to the molten Mg to form a molten alloy, casting the molten alloy, and heat-treating the cast alloy to precipitate the quasicrystals and approximants thereof in the Mg mother phase.

The invention relates to high-damping and high-strength Mg-Cu-Mn-Zn-Y alloy and a manufacturing method thereof. The high-damping and high-strength Mg-Cu-Mn-Zn-Y alloy is characterized by comprising the following alloying element components distributed in the alloy and the content value thereof in percent by weight: 1.0%-4.0% of Cu, 0.3%-1.5% of Mn, 0.3%-4.0% of Y, 1.0%-5.5% of Zn and the balance of magnesium. In order to solve the conflict of the damping property and the mechanical property of the magnesium alloy, the invention puts forward the fact that a Zn element and a Y element are addedin the high-damping Mg-Cu-Mn alloy so that the Mg, the Zn and the Y form quasicrystals and / or long-prepared phases in the alloy, the quasicrystals or the long-prepared phases can introduce a great amount of new movable dislocations in a magnesium matrix, the damping property of the magnesium alloy is improved through movable dislocations newly increased in the magnesium matrix, and then the conventional heat extrusion is carried out on the alloy so that the mechanical property of the alloy is improved. The invention has the advantages of simple process, strong transportability, easy operationand lower cost and solves the problem that the Mg alloy has limited application due to high damping property and low mechanical property, and the used equipment is conventional and general equipment.

The invention relates to a sapphire substrate and a manufacturing method thereof and a light emitting diode adopting the sapphire substrate and a preparation method thereof. The surface of the sapphire substrate is provided with a graph structure of a photonic quasicrystal structure. The proportion of the area of a C surface of the sapphire substrate, which is exposed in the graph structure, in the whole bottom area of the sapphire substrate is low. The surface of the sapphire substrate is provided with the graph structure of the photonic quasicrystal structure; the graph structure is formed in a mode that sub regions are periodically arrayed and has the lattice constant of 0.2 to 5mum; a space between each two adjacent sub regions is of a V shape or a similar V shape; the sub regions extend to the side wall of the C surface of the sapphire substrate and are at an angle of 25 to 60 degrees with the C surface of the sapphire substrate; and the proportion of the C surface of the sapphire substrate, which is exposed in the graph structure, is lower than 20 percent. The manufacturing method of the sapphire substrate comprises the following steps of: forming the photonic crystal structure on the surface of the sapphire substrate; and then carrying out anisotropic etching on the side wall of the photonic crystal structure by using a phosphoric acid / sulphuric acid mixed solution so as to form the photonic quasicrystal graph structure.