1394 results about "Zn element" patented technology

Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a GaxInyZnz oxide and at least one material selected from the group consisting of a 4A group element, a 4A group oxide, a rare earth element and combinations thereof.

A combination is described comprising at least one omega-3 fatty acid, optionally esterified or salified, at least one statin, Coenzyme Q10, resveratrol, at least one policosanol, pantethine, selenium, and zinc. This combination is endowed with a synergistic effect and is useful in the treatment of disease forms due to insulin resistance and in cardiovascular diseases.

A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

An apparatus in accordance with the invention may include a downhole tool and a data transmission path incorporated into the downhole tool. The data transmission path may include one or more contact surfaces providing electrical continuity to the data transmission path. To protect the contact surfaces from corrosion while maintaining electrical conductivity, a coating may be attached to one or more of the contact surfaces. The coating may include any of various materials that increase the corrosion-resistance of the underlying base metal, including but not limited to cobalt, nickel, tin, tin-lead, platinum, palladium, gold, silver, zinc, or combinations thereof.

A transistor is provided, which is entirely and partially transparent by the use of a transparent channel layer made of zinc oxide or the like. A channel layer 11 formed of a transparent semiconductor such as zinc oxide ZnO. A transparent electrode is used for all of a source 12, a drain 13 and a gate 14, or a part of them. As the transparent electrode, a transparent conductive material such as conductive ZnO doped with, for example, group III elements is used. As a gate insulating layer 15, a transparent insulative material such as insulative ZnO doped with elements capable of taking a valence of one as a valence number or group V elements is used. If a substrate 16 must be transparent, for example, glass, sapphire, plastic or the like can be used as a transparent material.

Provided herein are novel phosphors useful in the manufacture of white light emitting diodes. The phosphors provided by the invention are described by the formula:SrxBayCazSiO4:Euin which x, y, and z are each independently variable to be any value between about 0 and about 2, including without limitation 0.001 and 2, and every thousandth therebetween, subject to the proviso that the sum of x, y, or z is equal to at least 1, and in which Eu is present in any amount between about 0.0001% and about 5% by weight based upon the phosphor's total weight, wherein substantially all of the europium present is present in the divalent state. A phosphor according to the invention may optionally further comprise an element selected from the group consisting of: Ce, Mn, Ti, Pb, and Sn and is present in any amount between about 0.0001% and about 5% by weight based on the phosphor's total weight. The silicate phosphor materials provided by the present invention do not require the addition of dissimilar blue and red phosphor compounds, and do not contain zinc and / or magnesium. In addition, the present invention provides materials which emit a broad yellowish color containing both green and red emissions.Standard techniques used in phosphor deposition for the manufacture of light emitting diodes which comprise phosphors may be employed to produce LED's having a white light output when the phosphors of the invention are utilized.

The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.

It is an object of the invention is to provide a light-emitting element in which failure of the light-emitting element due to separation can be controlled and stable luminescence can be obtained with high-efficiency and for a long stretch of time by controlling separation of layers constituting the light-emitting element. According to one aspect of a light-emitting element of the invention, the light-emitting element sandwiches a plurality of layers between a pair of electrodes, wherein at least one layer of the plurality of layers is a layer containing a substance selected from bismuth oxide, cobalt oxide, chromium oxide, copper oxide, nickel oxide, and titanium oxide, or at least one layer of layers different from a light-emitting layer among the plurality of layers is a mixed region of one substance selected from bismuth oxide, cobalt oxide, copper oxide, magnesium oxide, nickel oxide, zinc oxide, and titanium oxide and an organic compound.

The free-cutting copper alloy according to the present invention contains a greatly reduced amount of lead in comparison with conventional free-cutting copper alloys, but provides industrially satisfactory machinability. The free-cutting alloys comprise 71.5 to 78.5 percent, by weight, of copper, 2.0 to 4.5 percent, by weight, of silicon, 0.005 percent up to but less than 0.02, by weight, of lead, and the remaining percent, by weight, of zinc.

A semiconductor device can include a channel including a zinc-indium oxide film.