The invention relates to an environment-friendly heavy metal-free quantum dot solar cell and a manufacturing method thereof, and belongs to the technical field of advanced manufacturing of new energy resources. The cell mainly comprises a substrate, a positive electrode, a hole collection layer, a photosensitive layer, a collection layer and a negative electrode, wherein the positive electrode is an ITO (indium tin oxide) electrode and is deposited on the substrate; sunlight can transmit through the ITO electrode and the substrate; the hole collection layer is a PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)) layer with extremely strong electrical conductivity, and is spin-coated on the ITO electrode; the photosensitive layer is a CuInS2 / ZnS QDs layer positioned above the PEDOT:PSS layer; the collection layer is a ZnO nanofilm layer spin-coated on the CuInS2 / ZnS QDs layer; the negative electrode is an Al electrode evaporated on the ZnO nanofilm layer. According to the solar cell with the structure, the characteristics of high efficiency, flexibility and process simplicity of a quantum dot solar cell are maintained; in addition, the solar cell does not contain heavy metals, so that the requirement of environment friendliness is met.