The invention discloses a method for testing
processing residual stress of a 'through-
silicon via'-Cu structure, and belongs to the technical field of
electronic information. The method includes downwardly squeezing a
copper cylinder in a through-
silicon via in a
test sample by a pressure head, simultaneously recording the displacement and the pressure F when the pressure head acts downwardly to obtain a pressure F and displacement curve and a threshold value of the pressure F when the pressure F is reduced, and substituting the threshold value of the pressure F in a pressure and
interfacial shear stress conversion formula to obtain a
shear stress threshold value tau 0 when a
copper and
silicon interface in the TSV-Cu structure manufactured by a
copper plating process slips; and computing to obtain the to-be-measured
residual stress of the 'through-silicon via' TSV-Cu structure via the
shear stress threshold value tau 0. The method has the advantages that completeness of the
test sample is kept to the greatest extent, operation, such as
cutting the
test sample, which affects release of the
residual stress, is omitted, and a test result is accurate; and a residual stress computing method is simple and reliable, and the positive or negative property of the residual stress can be visually judged.