37 results about "Interchalcogen" patented technology

A thermoelectric composition comprises a material represented by the general formula (AgaX1-a)1+-x (SnbPbl-b)m M'1-yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M' is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently > 0 and =1; x and y are independently > 0 and < 1; and 2 =m =30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.

Provided is a target of sintered compact essentially consisting of an element of (A), an element of (B) and an element of (C) below, wherein the thermal conductivity is 2.5 W / mK or more and the oxygen concentration is 5000 ppm or more:(A) one or more chalcogenide elements selected from S, Se, and Te;(B) one or more Vb-group elements selected from Bi, Sb, As, P, and N; and(C) one or more IVb-group elements or IIIb-group elements selected from Ge, Si, C, Ga, and In. Also provided is a technology enabling stable DC sputtering, and stable and high-speed sputtering by applying high electric power, by improving heat accumulation and diffusion of volatile components due to the sputtering target having high thermal conductivity and low electric resistivity.

The present invention provides a palladium-coated copper bonding wire which does not undergo the formation of shrinkage cavities during a first bonding procedure, has high bonding reliability, and can keep the excellent bonding reliability thereof for a long period of time even in high-temperature / high-humidity environments. A palladium-coated copper bonding wire, in which the concentration of palladium is 1.0-4.0% by mass inclusive, the total concentration of sulfur-group elements is 50 ppm by mass or less, and the concentration of sulfur is 5-12 ppm by mass inclusive or the concentration of selenium is 5-20 ppm by mass inclusive or the concentration of tellurium is 15-50 ppm by mass inclusive all relative to the total amount of copper, palladium and sulfur-group elements, and a palladium-rich region having an average palladium concentration of 6.5-30.0 at.% relative to the total amount of copper and palladium exists in a region lying between the surface of a tip part of a free air ball formed at a tip of the wire to the depth of 5.0-100.0 nm inclusive from the surface of the tip part.

Disclosed is a plurality of metal chalcogenide nanocrystals coated with multiple organic and inorganic ligands; wherein the metal is selected from Hg, Pb, Sn, Cd, Bi, Sb or a mixture thereof; and the chalcogen is selected from S, Se, Te or a mixture thereof; wherein the multiple inorganic ligands includes at least one inorganic ligands are selected from S2−, HS−, Se2−, Te2−, OH−, BF4−, PF6−, Cl−, Br−, I−, As2Se3, Sb2S3, Sb2Te3, Sb2Se3, As2S3 or a mixture thereof; and wherein the absorption of the C—H bonds of the organic ligands relative to the absorption of metal chalcogenide nanocrystals is lower than 50%, preferably lower than 20%.

The invention belongs to the field of display devices and provides a preparation method of a modified metal chalcogen compound and a light emitting device. In the present invention, the metal chalcogen compound is provided, and the metal chalcogen compound is placed in a reaction chamber to perform the first modification treatment and the second modification treatment to obtain the modified metal chalcogen compound. In this preparation process, the first modification treatment reduces the defects of chalcogen elements through sufficient acid treatment, and releases the charges combined with the defect states of chalcogen elements, and at the same time removes the oxygen species (oxygen species) to obtain purer metal chalcogenides; the second modification treatment allows chalcogen defect states and thiols to chemically adsorb in the form of covalent bonds through thiol treatment, and eliminates the remaining defects on the surface of chalcogens to the minimum; thereby obtaining a modified metal chalcogenide with higher charge transport efficiency, which improves the luminous efficiency of the device. In addition, the preparation method has simple process and low cost, and can realize large-scale production.

The invention discloses a core-shell structure type wave-absorbing material and a preparation method thereof. The wave-absorbing material has a core-shell structure with two-dimensional transition metal-chalcogen compound nanosheets as the core and hollow carbon spheres as the shell. The preparation method comprises: dissolving hollow carbon spheres in a solvent, sequentially adding a transition metal source and a chalcogen source, stirring and dissolving, performing solvothermal reaction, and then obtaining the wave-absorbing material through post-treatment. The invention also discloses the application of the wave-absorbing material in military and civil high-frequency electromagnetic compatibility and protection fields. The density of the core-shell structure wave-absorbing material of the present invention is 0.3~1.5kg / cm 3 It can effectively improve the maximum reflection loss value and effective bandwidth of the material in the frequency range of 2-40GHz. It is an electromagnetic compatibility and protective material that can meet the needs of civilian high-frequency electronic devices and military airships, artillery shells and other weapons and equipment.

The invention discloses a transition metal chalcogenide thin-layer material and its preparation method and application. The preparation method comprises: uniformly laying a transition metal source between two substrates to prepare a sandwich structure; heat-treating the sandwich structure , the two substrates are fused together, and then the chalcogen source and the fused-bonded sandwich structure are subjected to a chemical vapor deposition reaction under the protection of a protective gas, in which the transition metal source is heated to dissolve and diffuse at the reaction temperature , and precipitate on the surface of the substrate, and react with the chalcogen source; wherein, the chalcogen source includes one or more of sulfur source, selenium source and tellurium source. Through the above method, the present invention combines the principle of "dissolution-precipitation" with the chemical vapor deposition reaction to prepare transition metal chalcogenide thin-layer materials. The manufacturing process is simple and easy, and the process is controllable. The thin-layer material of the group compound is uniformly distributed in the range of centimeters, has good shape, excellent optical and electrical properties, and has broad application prospects.

The invention belongs to the technical field of insulator materials, and specifically relates to a bismuth-based topological insulator material and a preparation method thereof. The preparation methodcomprises the following steps: S1, uniformly mixing silicon dioxide powder, sodium hydroxide powder, boron oxide powder, bismuth-source compound powder and chalcogen element powder according to a molar ratio is 4: 4: 1: (0.05-0.5): (0.05-0.5) so as to obtain a mixture A; S2, melting the mixture A at a high temperature of 900 to 1100 DEG C, and carrying out cooling to a room temperature so as to obtain the bismuth-based topological insulator material; and S3, mixing the bismuth-based topological insulator material obtained in the step S2 with isopropyl alcohol, carrying out grinding so as to obtain bismuth-based topological insulator material powder, then dispersing the bismuth-based topological insulator material powder into isopropyl alcohol, and carrying out ultrasonic dispersion so asto obtain a bismuth-based topological insulator two-dimensional material. The method provided by the invention realizes natural growth of a crystal in a glass melt through a high-temperature glass melting method and utilization of low-cost raw materials, and realizes preparation of high-quality layered bismuth-based topological insulator binary and multiple system materials.

The invention belongs to the field of black silicon material preparation, and in particular relates to a method for preparing a selenium-silicon composite film by means of thermal evaporation and magnetron sputtering, and using femtosecond laser etching to prepare black silicon. The invention uses a layer of silicon film sputtered on the selenium film as a protective layer in the existing process, which reduces the volatilization of chalcogen elements in the femtosecond etching process, increases the doping content, and can prevent the introduction of laser pulse irradiation. The impurity Se diffuses to the grain boundary, so as to maintain its doping concentration on the surface, so as to improve the absorption rate of black silicon. The absorption rate of the black silicon prepared by using the method is higher than 95% in the 400-1100nm wave band, and the absorption rate in the 1100-2200nm wave band is higher than 90%. Compared with the black silicon material prepared by thermally evaporating a layer of selenium film without covering the silicon protective layer, the absorption rate of the black silicon prepared by the method in the near-infrared band is significantly improved.

A memory element including a memory layer disposed between a first electrode and a second electrode and a memory device including the memory element. The storage layer includes: an ion source layer containing one or more metal elements and one or more chalcogen elements among tellurium (Te), sulfur (S), and selenium (Se); Between the source layer and the first electrode, the resistance change layer includes a layer containing tellurium and nitrogen (N) and in contact with the ion source layer. The memory element and memory device of the present invention can provide good retention characteristics and improved repeated operation characteristics.

[Problem] The present invention addresses the problem of providing a laminate structure in which the atomic arrangement is highly stable, a method for manufacturing the laminate structure, and a semiconductor device in which the laminate structure is used. [Solution] This laminate structure is characterized in having an alloy layer A formed with germanium and tellurium being the main components, and an alloy layer B formed with tellurium and either antimony or bismuth being the main components, chalcogen atoms of sulfur and / or selenium being contained in the alloy layer A and / or the alloy layer B.

The present invention provides a storage element, a method for manufacturing the storage element, and a storage device, wherein the storage element sequentially includes a first electrode, a storage layer, and a second electrode. The storage layer includes: a resistance change layer disposed on the first electrode side; and an ion source layer containing one or more metal elements, and the ion source layer is disposed on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, and the first ion source layer contains more than one of the chalcogen elements tellurium (Te), sulfur (S), and selenium (Se) and is set On the resistance change layer side, and the content of chalcogen elements in the second ion source layer is different from the content of chalcogen elements in the first ion source layer, and the second ion source layer is arranged on the second electrode side . According to the present invention, the ion source layer can be prevented from being deteriorated, and the heat resistance of the memory element is improved. In other words, the formed memory device has high reliability.

A method of direct growth of a patterned transition metal dichalcogenide monolayer, the method comprising the steps of: providing a substrate covered by a mask having a pattern defined by one or more shaped holes; or a plurality of shaped holes thermally depositing the salt on the substrate so that the deposition salt is arranged on the substrate in a mask pattern; and thermally co-depositing the transition metal oxide and the chalcogen element onto the deposition salt to form Graphical patterning of transition metal dichalcogenide monolayers. Also provided are patterned transition metal dichalcogenide monolayers prepared according to the method.