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Gold-coated silver bonding wire and manufacturing method thereof, and semiconductor device and manufacturing method thereof

A bonding wire and semiconductor technology, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of not disclosing the composition of gold-covered silver bonding wires, not considering Au entering the Ag wire, and not implying ions Migration and other problems, to achieve the effect of suppressing ion migration, suppressing insulation deterioration or short circuit, and improving manufacturability

Pending Publication Date: 2020-12-15
TANAKA DENSHI KOGYO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Patent Document 2 does not consider the incorporation of Au into the Ag wire during FAB formation, and further fails to disclose a configuration for suppressing Au intrusion into the Ag wire
Therefore, Patent Document 2 does not suggest that ion migration occurs when a gold-coated silver bonding wire is used, and does not disclose the configuration of a gold-coated silver bonding wire for suppressing ion migration.

Method used

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  • Gold-coated silver bonding wire and manufacturing method thereof, and semiconductor device and manufacturing method thereof
  • Gold-coated silver bonding wire and manufacturing method thereof, and semiconductor device and manufacturing method thereof
  • Gold-coated silver bonding wire and manufacturing method thereof, and semiconductor device and manufacturing method thereof

Examples

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Embodiment 1～44

[0085] As the core material, a silver core material with a purity of 99% produced by continuous casting was prepared, and processed by continuous wire drawing to a median wire diameter of 0.05 mm to 1.0 mm. Furthermore, a gold coating layer was formed on the silver wire rod of intermediate wire diameter as follows. In a gold electrolytic plating bath to which additives such as sulfur, selenium, and tellurium have been added in appropriate amounts, the silver wire is dipped while being fed continuously, and the current density is 0.20A / dm in the silver wire. 2 ~1.0A / dm 2 A current is passed to form a gold capping layer containing chalcogen elements. Thereafter, the final heat treatment was performed on the wire drawn to a final wire diameter of φ20 μm, and the gold-coated silver bonding wires of Examples 1 to 36 were produced. These gold-coated silver bonding wires were used for the characteristic evaluation mentioned later.

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Abstract

A gold-coated silver bonding wire includes: a core material containing silver as a main component; and a coating layer provided on a surface of the core material and containing gold as a main component. The gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.

Description

technical field [0001] The present invention relates to a gold-coated silver bonding wire, a method for manufacturing the same, a semiconductor device using the wire, and a method for manufacturing the same. Background technique [0002] The electrodes of the semiconductor chip and the external electrodes of a circuit substrate such as a lead frame or a circuit board are connected by, for example, wire bonding. In wire bonding, generally, one end of the bonding wire is bonded to the electrode of the semiconductor chip by a method called ball bonding (first bonding), and the other end of the bonding wire is bonded to the circuit board by a method called wedge bonding. Material external electrode bonding (second bonding). In ball bonding, one end of the bonding wire is melted by electric discharge or the like, and solidified into a spherical shape by surface tension or the like to form a ball. The solidified ball is called a Free Air Ball (FAB), and is connected to the elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L21/3205H01L21/768H01L23/522
CPCH01L23/4952H01L23/3121H01L24/45H01L24/48H01L25/0652H01L25/50H01L2224/45139H01L2224/45565H01L2224/45644H01L2224/48137H01L2224/48247H01L2225/06506H01L2225/0651H01L2225/06568H01L2224/43125H01L2224/4321H01L2224/43848H01L2224/48227H01L2224/48145H01L2224/49109H01L2224/73265H01L2224/73215H01L2224/32145H01L2224/32225H01L2224/85207H01L2224/85045H01L2224/48451H01L2224/48465H01L24/43H01L24/85H01L2224/33181H01L2224/04042H01L2224/05647H01L2224/85399H01L2224/29099H01L2224/05638H01L2224/05624H01L2924/181H01L2924/00012H01L2924/01014H01L2924/013H01L2924/01013H01L2924/01029H01L2924/00014H01L2924/01028H01L2924/01026H01L2924/01049H01L2924/01052H01L2924/01045H01L2924/01079H01L2924/01032H01L2924/01015H01L2924/01031H01L2924/01078H01L2924/01046H01L2924/0102H01L2924/01034H01L2924/01016H01L2924/00H01L24/44H01L24/12H01L24/11H01L23/49816H01L21/4853H01L25/065H01L2924/01047
Inventor 安德优希川野将太崎田雄祐
Owner TANAKA DENSHI KOGYO KK
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