Transition metal sulfur-group compound thin-layer material as well as preparation method thereof and application thereof

Abstract

The invention discloses a transition metal sulfur-group compound thin-layer material as well as a preparation method thereof and application thereof. The preparation method comprises the following steps: uniformly spreading a transition metal source between two linings to prepare a sandwich structure; performing thermal treatment on the sandwich structure, fusing and bonding two substrates together, performing chemical vapor deposition reaction on a sulfur-group element source and the fused bonded sandwich structure under protection of protective gas, heating the transition metal source to dissolve and diffuse at a reaction temperature, separating out the transition metal source on the surfaces of the substrates, and enabling the transition metal source to react with the sulfur-group element source, wherein the sulfur-group element source comprises one or more of a sulfur source, a selenium source and a tellurium source. In this way, a dissolving-separating out principle is combined with the chemical vapor deposition reaction to prepare the transition metal sulfur-group compound thin-layer material, and a preparation process of the transition metal sulfur-group compound thin-layer material is simple and easy, and is controllable in process; and the obtained transition metal sulfur-group compound thin-layer material is uniformly distributed in a centimeter-level range, is good in morphology, is excellent in performances such as optical performances and electrical performances, and has a wide application prospect.

Description

technical field [0001] The invention relates to the technical field of preparation of two-dimensional semiconductor materials, in particular to a transition metal chalcogenide thin-layer material and its preparation method and application. Background technique [0002] The progress of modern information technology depends to a large extent on the development of integrated circuits based on semiconductor silicon. At present, due to the limitations of physical laws such as short channel effects and manufacturing costs, the mainstream complementary metal oxide semiconductor ( CMOS) technology is about to reach the 10nm technology node, and it is difficult to continue to improve, which also indicates that "Moore's Law" may face the end or delay. Therefore, exploring new semiconductor materials and developing transistor technology based on new principles to replace silicon-based CMOS technology is one of the mainstream research and development directions in the scientific and ind...

AI Technical Summary

Problems solved by technology

At present, the growth of transition metal chalcogenides (such as molybdenum disulfide) usually uses molybdenum trioxide and sulfur powder as the reaction source, and adopts the method of "substrate facing down" or "substrate facing up". The obtained samples are often poor in uniformity, with very thick samples in the middle region of the substrate, and discrete triangular thin-layer samples formed at the edges; such uneven distribution will seriously affect the application of transition metal chalcogenides in the electronics industry. application

[0005] The existing patent application CN108286042A discloses a method for preparing a molybdenum disulfide thin film with uniform layers, that is, a large-area single-layer molybdenum disulfide thin film is prepared on a silicon substrate by using potassium chloride-assisted chemical vapor deposition method. The amount of potassium to obtain single-layer molybdenum disulfide films of different sizes; the number of molybdenum disulfide layers grown by this method is uniform, but the distribution on the entire silicon substrate is difficult to achieve complete uniformity

The existing patent CN204779804U discloses a single sulfur source temperature control system to improve the growth uniformity of molybdenum disulfide. The raw material bottle used in this system is equipped with sulfur powder, and the heating tape is wound around the periphery of the material bottle. Argon is installed in the material bottle. Gas input tube and argon output tube, and the argon input tube and argon output tube are connected with the argon input tube of the tube furnace, and the sulfur source during the growth of the molybdenum disulfide film is realized by using the separate temperature control technology of the sulfur source. The precise control of temperature and vapor pressure avoids the premature sulfuration of molybdenum trioxide caused by the early evaporation of sulfur in the traditional chemical vapor deposition process, and improves the uniformity of the molybdenum disulfide film; but this method fails to improve the substrate, only Enables uniform sample preparation in a small area

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