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Chalcogenide film, device including, and method of forming same

A chalcogenide and thin film technology, applied in chemical instruments and methods, gaseous chemical plating, ion implantation plating, etc., can solve problems such as low carrier mobility, unsuitable low-energy spectral range, poor environmental stability, etc.

Active Publication Date: 2019-06-14
NANYANG TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although layered BPs can be used in mid-infrared photodetectors and modulators, layered BPs only cover ~4.1 μm (0.3 eV) wavelengths and also have relatively poor environmental stability.
On the other hand, two-dimensional transition metal chalcogenides (TMDC) (MX 2 , M=Mo, W, X=S, Se) are not suitable for mid-infrared operation due to large bandgap and low carrier mobility
Therefore, most of these developed TMDCs are not suitable for applications in the low-energy spectral range

Method used

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  • Chalcogenide film, device including, and method of forming same
  • Chalcogenide film, device including, and method of forming same
  • Chalcogenide film, device including, and method of forming same

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Embodiment Construction

[0081] The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the disclosure may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the disclosure. Other embodiments may be utilized and structural, logical changes may be made without departing from the scope of the present disclosure. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.

[0082] Embodiments described in the context of one method or one chalcogenide membrane / device are similarly valid for other methods or chalcogenide membranes / devices. Similarly, embodiments described in the context of a method are similarly valid for chalcogenide films and / or devices, and vice versa.

[0083] Features described in the context of one embodiment may correspondingly ap...

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Abstract

The invention relates to a chalcogenide film comprising a noble metal chalcogenide material having a formula MCx. M may represent a noble metal, C may represent a chalcogen, x may be any one positivevalue equal to or more than 1.4 and less than 2. The chalcogenide film may be configured to generate electrons and holes upon light incident on the chalcogenide film. A method of producing a chalcogenide fil m with increased vacancy or defect is provided, wherein increasing vacancies or defects may lead to decrease in bandgap and enhance absorption at wavelength range such as mid-infrared. The chalcogenide film is used in a device including photodetector or a solar cell.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Singapore Patent Application No. 10201607347V filed on 2 September 2016, the contents of which are hereby incorporated by reference in their entirety. technical field [0003] Various aspects of the present disclosure relate to chalcogenide thin films. Aspects of the present disclosure relate to devices including chalcogenide thin films. Various aspects of the present disclosure relate to methods of forming chalcogenide thin films. Background technique [0004] Much research has been done on mid-infrared (mid-IR) radiation, as such bands contain the fingerprints of the most common molecular vibrations and may also pass relatively unaffected due to the transparent window of this wavelength in the atmosphere atmosphere. Furthermore, mid-infrared radiation has enormous applications in emerging fields such as optical communications, infrared imaging, and analytical science. [000...

Claims

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Application Information

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IPC IPC(8): H01L31/0264C23C16/30
CPCC23C14/0005C23C14/0623C30B29/46C30B33/06H01L31/032C23C14/228C23C14/0629H01L31/0272
Inventor 余学超余鹏王岐捷刘政
Owner NANYANG TECH UNIV
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