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Doped transition metal chalcogenide film and preparation method and application thereof

A technology of transition metal chalcogenides and transition metals, which is applied in the direction of metal material coating process, final product manufacturing, gaseous chemical plating, etc., and can solve the problems such as inapplicable single-layer transition metal chalcogenide doping

Active Publication Date: 2021-08-03
TSINGHUA BERKELEY SHENZHEN INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Another plan proposes a method for multi-metal doped molybdenum disulfide materials. This method uses molybdenum trioxide as the substrate, inserts various metal atoms between the molybdenum trioxide layers and then performs sulfuration reaction, but this method is not applicable for doping monolayer transition metal chalcogenides

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  • Doped transition metal chalcogenide film and preparation method and application thereof
  • Doped transition metal chalcogenide film and preparation method and application thereof
  • Doped transition metal chalcogenide film and preparation method and application thereof

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Embodiment 1

[0053] This embodiment provides a vanadium-doped molybdenum disulfide thin film, and the preparation method of the vanadium-doped molybdenum disulfide thin film specifically includes the following steps:

[0054] (1) Soda-lime glass with a thickness of 0.15mm is used as the first substrate, and the soda-lime glass with a thickness of 2mm is used as the second substrate, and sodium molybdate is evenly drip-coated on the surface of the second substrate, and the sodium molybdate Loading capacity is 0.96mg / cm 2 After being completely dried in a blast drying oven, cover the first substrate; heat treatment in a muffle furnace at a rate of 50°C / min to 600°C for 30 minutes, so that the first substrate and the second substrate are fused and bonded. Put together to form a sandwich.

[0055] (2) sodium metavanadate is evenly spin-coated on the surface of the first substrate of the interlayer obtained in step (1), and the loading capacity of sodium metavanadate is 10mg / cm 2 , and comple...

Embodiment 2

[0064] This embodiment provides an iron-doped molybdenum disulfide thin film, and the preparation method of the iron-doped molybdenum disulfide thin film includes the following steps:

[0065](1) Soda-lime glass with a thickness of 0.15mm is used as the first substrate, and the soda-lime glass with a thickness of 2mm is used as the second substrate, and sodium molybdate is uniformly drip-coated on the surface of the second substrate, and the sodium molybdate Loading capacity is 0.96mg / cm 2 After being completely dried in a blast drying oven, cover the first substrate; heat treatment in a muffle furnace at a rate of 50°C / min to 600°C for 30 minutes, so that the first substrate and the second substrate are fused and bonded. Put together to form a sandwich.

[0066] (2) Ferric chloride is evenly spin-coated on the surface of the first substrate of the interlayer obtained in step (1), and the loading of ferric chloride is 10mg / cm 2 , and completely dried in a blast drying oven t...

Embodiment 3

[0070] This embodiment provides a chromium-doped molybdenum disulfide thin film, and the preparation method of the chromium-doped molybdenum disulfide thin film specifically includes the following steps:

[0071] (1) Soda-lime glass with a thickness of 0.15mm is used as the first substrate, and the soda-lime glass with a thickness of 2mm is used as the second substrate, and sodium molybdate is uniformly drip-coated on the surface of the second substrate, and the sodium molybdate Loading capacity is 0.96mg / cm 2 After being completely dried in a blast drying oven, cover the first substrate; heat treatment in a muffle furnace at a rate of 50°C / min to 600°C for 30 minutes, so that the first substrate and the second substrate are fused and bonded. Put together to form a sandwich.

[0072] (2) Sodium chromate is evenly spin-coated on the surface of the first substrate of the interlayer obtained in step (1), and the loading of sodium chromate is 8.8mg / cm 2 , and completely dried in...

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Abstract

The invention discloses a doped transition metal chalcogenide film and a preparation method and application thereof. The preparation method comprises the following steps of providing a substrate, wherein a transition metal source is arranged in the substrate, and a heterogeneous metal source is arranged on the surface of the substrate; and enabling the chalcogens source to be in contact with the substrate, carrying out heating in a protective atmosphere, and carrying out a chemical vapor deposition reaction to obtain the doped transition metal chalcogenide film. In the heating treatment process, the transition metal source is continuously diffused from the substrate and separated out from the surface of the substrate. The separated transition metal source and the chalcogens source are subjected to the chemical vapor deposition reaction in the protective atmosphere, the heterogeneous metal source is embedded into a crystal lattice in the growth process of a transition metal chalcogenide, and a doped sample is obtained. According to the doped transition metal chalcogenide film and the preparation method and application thereof, the regulation and control capacity for the concentration of doped metal elements is improved through a double-face reaction source supply strategy adopted by the method, and the universality problem during doping of various metal elements in a single-face source mode is solved.

Description

technical field [0001] The present application relates to the technical field of two-dimensional materials, in particular to a doped transition metal chalcogenide thin film and its preparation method and application. Background technique [0002] As a new class of semiconductor materials, two-dimensional transition metal chalcogenides have unique physical properties and have broad application prospects in the fields of electricity, optics and magnetism. Its atomic-level thickness and surface without dangling bonds enable it to overcome the short-channel effect in transistor applications, which is in line with the technological development trend of stacked packaging, and thus makes this type of material a potential choice for continuing Moore's Law. However, how to efficiently improve and adjust the properties of such materials to further promote their applications in the above fields is still an urgent problem to be solved. Compared with chemical functionalization, the meth...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/44C23C16/02
CPCC23C16/305C23C16/44C23C16/02Y02P70/50
Inventor 刘碧录赖泳爵蔡正阳
Owner TSINGHUA BERKELEY SHENZHEN INST
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