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Silver-containing P-type semiconductor

A technology of n-type semiconductor and semiconductor, which is applied in the direction of lead wire materials, electrical components, circuits, etc. of thermoelectric devices, which can solve the problems of low efficiency of thermoelectric devices.

Inactive Publication Date: 2007-09-12
BOARD OF TRUSTEES OPERATING MICHIGAN STATE UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, thermoelectric devices made using these materials are relatively inefficient, with energy conversion efficiencies of about 5-8%

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0096] The formula Ag was prepared by using stoichiometric amounts of Ag (0.2234g), Pb (4.2919g), Sn (2.4586g), Sb (0.1681g) and Te (5.8726g) 0.9 Pb 9 sn 9 Sb 0.6 Te 20 thermoelectric materials. Various elements were loaded in a 13 mm quartz tube and placed under vacuum (10 -4 support or below) seal. The tube was placed in an oven and heated for 20 hours up to a temperature of 980°C. The furnace was held at 980°C for an additional hour, then the furnace was shaken at 980°C for 2 hours. Shake at a frequency of 1-2 cycles / min. The oven was then stopped from shaking and held vertically at 980°C for an additional hour. The furnace was then cooled to 450°C in 53 hours and further cooled to 50°C in 20 hours.

[0097] Measure electrical conductivity, thermoelectromotive force and thermal conductivity from 300K to 800K, and calculate figure of merit based on temperature. The figure of merit is about 1.0 at 620K, about 1.3 at 700K, and about 1.4 at 800K.

Embodiment 2

[0099] In a similar manner, Ag 0.9 Pb 10 sn 8 Sb 0.8 Te 20 . It has a figure of merit of 1.6 at 800K.

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Abstract

A thermoelectric composition comprises a material represented by the general formula (AgaX1-a)1+-x (SnbPbl-b)m M'1-yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M' is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently > 0 and =1; x and y are independently > 0 and < 1; and 2 =m =30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.

Description

[0001] This invention work was supported in part by Grant N00014-03-1-0789 of the United States Naval Research Institute. The United States Government may have certain rights in this invention. technical field [0002] The present invention relates generally to thermoelectric materials. In particular, the present invention relates to silver-containing semiconductor materials for use in various thermoelectric devices. Background technique [0003] Various thermoelectric devices are known in the art that use thermoelectric materials to generate electricity or for cooling and heating applications. Thermoelectric devices can have vastly different advantages in many applications. For example, generators based on thermoelectric materials do not use moving parts like conventional generators. This feature significantly enhances the reliability of thermoelectric devices by avoiding mechanical wear and corresponding failure of moving parts. This further reduces maintenance costs. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H10N10/852H10N10/01H10N10/13H10N10/851H10N15/00
CPCH01L35/16H10N10/852
Inventor M·G·卡纳特齐迪斯许桂芳
Owner BOARD OF TRUSTEES OPERATING MICHIGAN STATE UNIV
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