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Preparation method of transition metal chalcogenide crystal

A technology of chalcogenides and transition metals, which is applied in the field of materials, can solve the problems of limiting the final size of crystals and the inability to prepare large-sized and high-quality transition metal chalcogenide crystals, and achieve high-quality results

Active Publication Date: 2022-02-18
TSINGHUA UNIV +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the existing CVT method usually nucleates at multiple positions on the inner wall of the reaction chamber, which limits the final size of the crystal and generates aggregated small crystal clusters, making it impossible to prepare large-sized and high-quality transition metal chalcogenides. compound crystal

Method used

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  • Preparation method of transition metal chalcogenide crystal
  • Preparation method of transition metal chalcogenide crystal
  • Preparation method of transition metal chalcogenide crystal

Examples

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preparation example Construction

[0025] The preparation method comprises the following steps:

[0026] Step S10, providing MX 2 Polycrystalline powder 11 and MX 2 Seed 13;

[0027] Step S20, providing a first reaction chamber 31, one end of the first reaction chamber 31 has an opening 311, the MX 2 The polycrystalline powder 11 and the transport medium 15 are placed in the first reaction chamber 31; and

[0028] Step S30, providing a second reaction chamber 33, the second reaction chamber 33 is a vacuum-tight chamber, the first reaction chamber 31 and the MX 2 The seeds 13 are respectively placed in the second reaction chamber 33 for CVT growth, wherein the first reaction chamber 31 is placed at the source end, and the MX 2 A seed crystal 13 is placed at the deposition end.

[0029] In step S10, the polycrystalline MX 2 Powder 11 is a hundred-micron powder with no obvious luster, and twins, grain boundaries or rough surfaces are likely to exist.

[0030] The polycrystalline MX 2 Powder 11 can be obtai...

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Abstract

The invention relates to a preparation method of a transition metal chalcogenide crystal, wherein the chemical formula of the transition metal chalcogenide can be expressed as MX2, and wherein M is a central transition metal element, and X is a chalcogen element. The preparation method comprises the following steps: preparing polycrystalline MX2 powder and an MX2 seed crystal; placing a transport medium and the polycrystalline MX2 powder in a first reaction chamber, and placing the MX2 seed crystal in a second reaction chamber, wherein one end of the first reaction cavity is provided with an opening, the second reaction cavity is vacuum-sealed and has a temperature gradient, the first reaction cavity is arranged in a high-temperature area in the second reaction cavity, and the MX2 seed crystal is arranged in a low-temperature area in the second reaction cavity.

Description

technical field [0001] The present invention relates to the technical field of materials. Background technique [0002] Transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electrical and optical properties. The chemical formula of transition metal chalcogenides can be expressed as MX 2 , wherein M is a central transition metal element (for example, IV, V, VI, VII, IX or X group elements), and X is a chalcogen element (for example, S, Se or Te). [0003] Currently, the preferred method for preparing bulk transition metal chalcogenides is chemical vapor transport (CVT). However, the existing CVT method usually nucleates at multiple positions on the inner wall of the reaction chamber, which limits the final size of the crystal and generates aggregated small crystal clusters, making it impossible to prepare large-sized and high-quality transition metal chalcogenides. compound crystals. Contents of the invention [0004] In view of...

Claims

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Application Information

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IPC IPC(8): C30B25/08C30B25/14C30B29/46
CPCC30B25/08C30B25/14C30B29/46C01B19/007C30B29/48C30B23/00C01P2002/72
Inventor 李昊吴扬范守善
Owner TSINGHUA UNIV
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