95 results about "Cathode sputtering" patented technology

A method for sputtering a textured zinc oxide coating onto a substrate by reactive-environment hollow cathode sputtering comprises providing a sputter reactor that has a cathode channel and a flow exit end. The cathode channel allows a gas stream to flow therein. This cathode channel is at least partially defined by a channel-defining surface that includes at least one zinc-containing target. A gas is flowed through the channel, such that the gas emerges from the flow exit. A plasma is then generated such that material is sputtered off the channel-defining surface to form a gaseous mixture containing zinc atoms that is transported to the substrate. A reactive gas is then introduced into the sputter reactor so that the reactive gas reacts with the zinc-containing gaseous mixture to form the textured zinc oxide coating.

A hollow cathode sputtering apparatus and related method for introducing dopants into a sputtered coating is provided. The method utilizes a sputter reactor which includes a cathode channel that allows a gas stream to flow therein and a flow exit end from which gases may flow out of and towards a substrate to be coated. The cathode channel as used in the invention is defined by a channel defining surface that includes at least one target material. The sputter reactor further includes a dopant target positioned to provide dopant atoms to the gas stream when the gas stream is flowed through the cathode channel.

The present invention provides an improved hollow cathode method for sputter coating a substrate. The method of the invention comprises providing a channel for gas to flow through, the channel defined by a channel defining surface wherein one or more portions of the channel-defining surface include at least one target material. Gas is flowed through the channel wherein at least a portion of the gas is a non-laminarly flowing gas. While the gas is flowing through the channel a plasma is generated causing target material to be sputtered off the channel-defining surface to form a gaseous mixture containing target atoms that is transported to the substrate. In an important application of the present invention, a method for forming oxide films and in particular zinc oxide films is provided.

A process for producing a tube target for cathode sputtering plants, in which the tube target is formed from a metallic inner tube made of a first material with a first melting point of Ts1>=900 K and a metallic outer tube that concentrically surrounds the inner tube and that is made of a second material with a second melting point of Ts2<=800 K. The inside diameter of the outer tube and the outside diameter of the inner tube are proportioned in such a way that the two tubes fit together tightly and are mechanically firmly joined. The outer tube is formed by casting the second material in a molten state in a heated, vertical, A cylindrical permanent mold, which has a heated mandrel that constitutes the inner tube. After a space between the mold and the inner tube has been filled with the molten second material, a first thermal gradient develops between the inner tube and the mold, a second thermal gradient develops between the bottom and the top of the mold, and the outer tube is simultaneously cooled from the inside to the outside and from the bottom to the top.

The present invention provides a ceramic cylindrical sputtering target characterized in being a single article having a length of 500 mm or longer and a relative density of 95% or greater. The ceramic cylindrical sputtering target is a single article having a high density and length of 500 mm or longer and therefore eliminates the need to use a stack of multiple sputtering targets in order to obtain a long target. Consequently, when the ceramic cylindrical sputtering target of the present invention is used in a magnetron rotary cathode sputtering target, and the like, there are no or few partitions in the target as a whole and therefore there is little arcing and particle generation during sputtering.

The invention relates to a process for producing a multifunctional multi-ply layer on a transparent plastic substrate and to a multifunctional multi-ply layer produced thereby. In the process, a multi-ply layer is constructed by a plasma-assisted method on a transparent plastics substrate (1) in an enclosed process by using a microwave plasma source to produce a plasma and continuously maintaining the plasma during the course of the process. A first adhesion-promoting organosilicon polymer layer (2) is subsequently deposited in the microwave plasma, and then cathode sputtering is used to deposit a first ITO layer (3), and a transparent layer of metal and/or of metal oxide and a second ITO layer (3). Finally, an organosilicon polymer layer (5) is deposited. The multifunctional multi-ply layer is composed of a first adhesion-promoting organosilicon polymer layer (2) with a thickness of from 50 to 300 nm, of a first ITO layer (3) with a thickness of from 50 from 300 nm, of at least one transparent layer with a thickness of from 10 to 30 nm of metal and/or of metal oxide, of a second ITO layer (3) with a thickness of from 50 to 300 nm, and of at least one final organosilicon polymer layer (5) with a thickness of from 300 nm to 6 000 nm.

Provided are a packaging device and packaging method of a hollow cathode sputtering target which installs, in the hollow cathode sputtering target, a cover of a size capable of covering a void of the target; provides one or more through-holes to the cover; places a resin bag over them, and performs vacuum suction to the inside of the bag. This packaging device and packaging method of a hollow cathode sputtering target is capable of performing vacuum suction even to the inside of the hollow portion covered with the resin bag.

The invention relates to a coating device and a coating method for a winding type sputtering three-layer dielectric film. The coating device comprises a cold roller, a main motor for driving the cold roller, a vacuum cavity wrapping the cold roller, an unwinding mechanism, a winding mechanism and five cathode chambers, wherein the middle three cathode chambers of the five cathode chambers have the same structure which is a dual-target cathode chamber; the cathode targets in the dual-target cathode chamber are two cathode sputtering targets; the two cathode chambers on the two sides in the five cathode chambers have the same structure which is a single-target cathode chamber; the cathode target of the single-target cathode chamber is a cathode sputtering target. By adopting the structure, the middle three dual-target cathode chambers perform sputtering on the middle dielectric film of the three-layer dielectric film by use of the same atmosphere, thus the film forming time of the middle dielectric film is prolonged, and the sputtering target range of the dual-target cathode is more accurate.

The invention relates to a method for preparing a ceramic from an inorganic base material in the form of a powder with a high boiling point, including a step in which the powder of the inorganic base material is mixed with a second inorganic component which is also in powder form and which serves as a dopant for the inorganic base material. The dopant comprises a single inorganic material or a mixture of at least two inorganic materials that have a dopant effect on the inorganic base material. The method also includes a sintering step performed at a high temperature. Owing to the high densitythereof, the resulting ceramics are suitable for use as a target element. The films and electrodes obtained from said ceramics have particularly beneficial properties.

The invention discloses a vacuum atomization suspension uniform sputtering coating method for a spherical powder material. Spherical powder is placed in a vacuum atomization tank; a cathode sputtering target and an anode body are arranged in the vacuum atomization tank; in the vacuum environment, when high-energy particles accelerated by an electric field or a magnetic field impact the surface of the cathode sputtering target, atomic molecules on the surface of the target carry out momentum exchange with the high-energy particles, so that atoms or molecules are splashed out of the surface of the target and have a certain energy; when the splashed atoms or molecules are collided with the spherical powder which is atomized and suspended in the vacuum, thin film deposition on the spherical powder is implemented. According to the invention, the high-performance spherical powder material which has functions of high and low temperature resistance, high-pressure resistance, moisture resistance, corrosion resistance, antioxidation and the like, has excellent performance, meets different requirements and has special functions can be produced; the antioxidant surface of the spherical metal powder can be subjected to functionalization processing.

An OLED device, including a substrate, an anode formed of a conductive material disposed over the substrate, an emissive layer having an electroluminescent material provided over the anode layer, a buffer layer, provided over the emissive layer and including phthalocyanine or derivatives thereof, an electron injecting dopant source layer provided over the buffer layer and including a compound of an alkali metal or thermal decomposition products thereof; and a sputtered layer of a metal or metal alloy provided over the buffer layer and selected to function with the buffer layer to inject electrons into the emissive layer.

The invention relates to a process for plating a film on an aluminum or aluminum alloy substrate. The method comprises the following steps of: pretreating the surface of a substrate; preparing a target from the following components in percentage by weight: 0.06-0.10 percent of carbon, 9.0-9.5 percent of nickel, 17.5-18.0 percent of chromium, 1.80-2.20 percent of manganese, 0.80-1.20 percent of silicon, 0.01-0.05 percent of sulphur, 0.043-0.048 percent of phosphorus, 2.38-2.42 percent of molybdenum, 0.0001-0.0005 percent of tungsten, 0.08-0.12 percent of copper, 0.04-0.08 percent of vitriol and the balance of iron; loading the target into vacuum sputtering equipment; and finally, plating the target on the surface of the substrate by adopting a vacuum magnetic control cathode sputtering method, wherein before sputtering is carried out, the vacuum degree in a furnace is 3.0-4mTorr, the argon quantity used during sputtering is 25-60R, direct current is used for bombarding, the voltage is 180-200V, and the current is 10-15A. The process not only achieves the purpose of environmental protection but also meets the requirement on quality.