71 results about "Carbon contamination" patented technology

Activated gaseous species generated adjacent a carbon contaminated surface affords in-situ cleaning. A device for removing carbon contamination from a surface of the substrate includes (a) a housing defining a vacuum chamber in which the substrate is located; (b) a source of gaseous species; and (c) a source of electrons that are emitted to activate the gaseous species into activated gaseous species. The source of electrons preferably includes (i) a filament made of a material that generates thermionic electron emissions; (ii) a source of energy that is connected to the filament; and (iii) an electrode to which the emitted electrons are attracted. The device is particularly suited for photolithography systems with optic surfaces, e.g., mirrors, that are otherwise inaccessible unless the system is dismantled. A method of removing carbon contaminants from a substrate surface that is housed within a vacuum chamber is also disclosed. The method employs activated gaseous species that react with the carbon contaminants to form carbon containing gaseous byproducts.

A pressure atomizing nozzle for injecting fuel includes an inlet housing configured to thermally isolate the interior space from external conditions and to remain relatively cool under operation so as to substantially eliminate heat soak back from the inlet housing to the interior space thereof after operation. First and second coolant conduits cool the nozzle tip region actively during operation and passively after operation. A cooling air jacket is configured to thermally isolate inboard components from exterior conditions, to provide clean air during operation to the nozzle tip region for diluting carbon to reduce carbon deposits in the nozzle tip region and for cooling the same, and to provide passive cooling to the nozzle tip region after operation.

The invention relates to a multilayer film improving extreme ultraviolet spectral purity and oxidation resistance, and belongs to the field of extreme ultraviolet lithography. On the premise that the small reflectivity loss of the 13.5 nm position of the multilayer film is ensured, the reflectivity of an out-of-band wave band, oxidation of the multilayer film and surface layer carbon contamination sedimentation are effectively restrained. The multilayer film sequentially comprises a substrate, multiple layer periods of Si layers/Mo layers, a spectrum purification layer, a Mo layer, a spectrum purification layer and a protection layer. On the basis of not changing the appearance of a film system, not increasing the number of optical elements and not adding extra machining steps, the spectrum purification layer and the protection layer are manufactured; under the condition that the reflectivity loss can be omitted, the imaging quality and the photoetching quality of a photoetching system are improved by restraining the out-of-band wave band, the oxidation of reflection layers and the sedimentation of carbon-contaminated layers.

An LDD structure and a silicide layer are formed without a reduction in thickness of a silicon substrate or a carbon contamination. Forming a spacer on a sidewall of a gate electrode is performed in two process steps, i.e. dry-etching and wet-etching. Also, a silicon nitride film used as a buffer film in injection of high dose of impurities is removed by wet-etching. As a result, the reduction in thickness of the silicon substrate and the carbon contamination can be prevented. In addition, variation in depth of the high and low impurity concentration regions and silicide forming region with locations on the wafer can be suppressed because of high selection ratio available with the wet-etching.

The present invention relates to a method for producing a metal by a direct oxide reduction process with Ca. A CaCl₂-based molten salt containing Ca is held in a reduction chamber 1, a metal oxide is introduced into the molten salt in the reduction chamber 1, and the metal oxide is reduced with the Ca in the molten salt to form said metal. The metal formed in the molten salt is separated from the molten salt in a separation means 2, and the molten salt deprived of the metal is introduced into a chlorination chamber 7 and subjected to chlorination treatment with chlorine gas to eliminate the byproduct CaO in the molten salt. The molten salt after chlorination treatment is introduced into an electrolysis chamber 8 and electrolyzed for the formation of Ca and chlorine from CaCl₂, and the thus-formed Ca or Ca-containing molten salt is transferred from the electrolysis chamber 8 to the reduction chamber 1. The chlorine obtained in the electrolysis chamber 8 is used in the chlorination chamber 7. Thus, the present invention provides a metal production method and an apparatus wherein high levels of productivity are obtained and the product metal can be inhibited from carbon contamination due to CaO, without any generation of CO₂ from the production process, while their being based on the direct oxide reduction process comprising the step of reducing a metal oxide with Ca.

The invention discloses an efficient, energy saving and power improving fuel additive. The efficient, energy saving and power improving fuel additive is prepared from, by weight, 20-40 parts of lauric isopropanolamide, 10-15 parts of polyisobutylene sulfide phosphating barium salt, 5-10 parts of polyisobutylene diimide, 0.5-1 part of an organosilicon compound, 0.5-1 part of sulfide plant fatty acid ester, 0.5-1 part of octyl glycoside, 10-25 parts of petroleum ether, 5-15 parts of a combustion improver and 0.1-0.2 part of a surfactant, wherein the combustion improver is obtained by mixing hydroxyethylferrocene with polyvinyl methyl ether according to the weight ratio of 1:1-3. The invention further provides a preparation method of the efficient, energy saving and power improving fuel additive. By the arrangement, combustion efficiency of fuel can be remarkably improved, the fuel can be combusted completely, engine power is improved, fuel consumption is reduced, carbon contamination can be removed, exhaust gas emission is reduced, and wide application prospect is achieved.

The invention provides a carbon pollution cleaning method of an EUV optical element, comprising the following steps: 1) placing the optical element in a cleaning cavity and vacuumizing the cleaning cavity; 2) injecting carbon dioxide in the cleaning cavity via a plasma transmitter to fill the cleaning cavity with the carbon dioxide in a plasma state, and cleaning the carbon pollution through oxidation reaction between the carbon dioxide in the plasma state and deposited carbon on the surface of the optical element. The cleaning method is simple, convenient and low in cost with less harm to the optical element.

A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon contamination. The high temperature ALD process can be used for either or both the bottom electrode and the top electrode layers.

The invention discloses a controllable reducing atmosphere Kyropoulos furnace. The Kyropoulos furnace comprises a software control system, an electric control system, a lifting system, a pressure balancing system, a power-off protection system, a cooling system, a rotary weighing system, a vacuum charging furnace chamber and a thermal field system. The Kyropoulos furnace is characterized by further comprising a set of low vacuum pressure balancing system. According to the controllable reducing atmosphere Kyropoulos furnace, by introducing the low vacuum pressure balancing system and re-integrating the vacuum system, the control system, the thermal field system and the protection system of a traditional Kyropoulos device, the crystal growth and annealing can be completed in one step. Meanwhile, the problem of carbon element and molybdenum element contamination existing in the thermal exchange method and the temperature gradient method is effectively solved and the carbon contamination caused by external factors in the crystal growth process can be avoided. By the controllable reducing atmosphere Kyropoulos furnace provided by the invention, large-sized optical-level sapphire or titanium sapphire crystal can be obtained to meet the needs of high-power lasers in military and civil use in domestic and oversea areas.

Applicants have discovered the existence of loss peaks in optical fiber transmission systems using wavelengths in the E-band and the L-band. Specifically, they have discovered the existence of narrow loss peaks at 1440 nm, 1583 nm and 1614 nm. Because the peaks are relatively narrow, they cannot be easily removed by conventional gain equalizers in long haul transmission systems, and although the peaks are relatively small, they can nonetheless cause transmission channels to drop out in amplified DWDM transmission systems. Applicants have further discovered that these loss peaks are due to carbon contamination of the transmission fiber. Thus optical fibers should be fabricated essentially free of carbon contamination. This means eliminating carbon-containing reagents in preform and tube-making processes.

In the formation of sheet material from molten glass, molten glass is formed in a melting furnace and transported through a precious metal delivery system to the forming apparatus. Disclosed herein is a method to eliminate carbon-containing contamination of individual components of the precious metal delivery system prior to their installation and use. The method comprises one or more heat treating steps in an oxygen-containing atmosphere prior to and/or during assembly of the component.