71 results about "Carbon contamination" patented technology

Methods for reducing carbon contamination when melting highly reactive alloys involving providing a graphite crucible having an interior, applying at least a first protective layer to the interior of the graphite crucible, placing a highly reactive alloy into the crucible having the first protective layer, and melting the highly reactive alloy to obtain a melted alloy having reduced carbon contamination.

This invention offers a manufacturing method which does not cause a reduction in thickness of a silicon substrate or a carbon contamination in forming a transistor having an LDD stricture and silicide layers formed by a salicide technology. After a gate electrode is formed on the silicon substrate through a gate insulation film, an insulation film made of the same material as the gate insulation film is formed on the gate electrode. A first insulation film made of a material different from the material of the gate insulation film and the insulation film on the gate electrode and a second insulation film made of the same material as the material of the gate insulation film and the insulation film on the gate electrode are formed over the silicon substrate. Spacers made of the second insulation film are formed by dry-etching. Then the LDD structure and openings for forming the silicide layers are formed using wet-etching. As a result, the transistor having the LDD structure and the silicide layers formed by the salicide technology is manufactured without causing the reduction in thickness of the silicon substrate or the carbon contamination.

A probe is made by attaching a carbon nanotube 12 to a mounting base end 13, which eliminates the effects of a carbon contamination film, to increase the bonding strength, increase the conductivity of the probe, and strengthen the bonding performance thereof by coating the entire circumference of the nanotube and the base with a coating film, rather than coating just one side. The work of mounting the carbon nanotube and mounting base end are performed under observation by a microscope. Further, the carbon contamination film 14 formed by an electron microscope is stripped off at a stage before bonding by the coating film.

A pressure atomizing nozzle for injecting fuel includes an inlet housing configured to thermally isolate the interior space from external conditions and to remain relatively cool under operation so as to substantially eliminate heat soak back from the inlet housing to the interior space thereof after operation. First and second coolant conduits cool the nozzle tip region actively during operation and passively after operation. A cooling air jacket is configured to thermally isolate inboard components from exterior conditions, to provide clean air during operation to the nozzle tip region for diluting carbon to reduce carbon deposits in the nozzle tip region and for cooling the same, and to provide passive cooling to the nozzle tip region after operation.

The invention discloses a composite carbon barrier coating for a polycrystalline silicon ingot furnace, which is used to coat the surface of a carbon material device in the ingot furnace to prevent carbon pollution, and is characterized in that: the composite carbon barrier coating includes coating A first coating composed of metal tungsten or metal molybdenum coated on the surface of the device, and a second coating coated on the first coating, the second coating is a silicon nitride layer or a silicon nitride layer In the laminated layer formed with the silicon oxide layer, the thickness of the first coating is 0.02-300 microns, and the thickness of the second coating is 0.02-300 microns. The invention also discloses a method for preparing the composite carbon barrier coating; at the same time, the invention also discloses a graphite guard plate and a polysilicon ingot furnace comprising the composite carbon barrier coating. The present invention eliminates the generation of carbon monoxide by coating the composite carbon barrier layer on the surface of the carbon material device in the polycrystalline ingot furnace, thereby reducing the impurities in the ingot polysilicon and the dislocations derived from the impurities, improving the crystal quality, and further Improve the conversion efficiency of solar cells.

An LDD structure and a silicide layer are formed without a reduction in thickness of a silicon substrate or a carbon contamination. Forming a spacer on a sidewall of a gate electrode is performed in two process steps, i.e. dry-etching and wet-etching. Also, a silicon nitride film used as a buffer film in injection of high dose of impurities is removed by wet-etching. As a result, the reduction in thickness of the silicon substrate and the carbon contamination can be prevented. In addition, variation in depth of the high and low impurity concentration regions and silicide forming region with locations on the wafer can be suppressed because of high selection ratio available with the wet-etching.