The invention belongs to the technical field of graphene preparation, and particularly relates to a method for preparing graphene through plasma-enhanced chemical vapor deposition. Solid carbon is used as a carbon source, and a plasma-enhanced chemical vapor deposition method is utilized for growing graphene. The method comprises the steps that 1, a substrate and an activated solid carbon are placed into different temperature regions in a plasma-enhanced chemical vapor deposition device for vacuumizing; 2, the temperature regions where the substrate and activated solid carbon are located are heated to reach the corresponding temperature, and gas is introduced; 3, a plasma generator is turned on to enable graphene to grow; and 4, a heating power source is turned off, gas is continuously introduced, rapid cooling is performed to the room temperature, and the graphene grows on the surface of the substrate uniformly. According to the method, the solid carbon has wide sources, the cost is low, the growth temperature is low, the selective range of the substrate is wide, and the complete and high-quality single-layer or multi-layer graphene can be obtained.