33results about How to "Reduced manufacturing method" patented technology

A separation hole is provided in the center of the gate electrode. Accordingly, it is possible to suppress a drastic increase in feedback capacitance Crss in the case where drain-source voltage VDS is decreased and the width of the depletion layer is narrowed. Thus, high-frequency switching characteristics are improved. Moreover, n type impurities are implanted from the separation hole to form an n type impurity region between channel regions. Since a resistance in a portion below the gate electrode can be reduced, an on-resistance can be reduced. The n type impurity region can be formed in a self-aligning manner.

A method for manufacturing a master mask, which is used for exposing, on an object to be exposed (2), a pattern having a size larger than an area that can be exposed at one time. A pattern having a size larger than an area that can be exposed at one time is divided into an area (4) with low repeatability and an area (A) with high repeatability. Secondly, the pattern of the aforementioned low-repeatability region (4) is drawn on at least one first master mask (1-5, 1-6). The pattern of the above-mentioned highly repeatable region (A) is drawn on at least one second master mask (1-1 to 1-4).

A structure for the front portion of a vehicle is provided with a bumper face which is provided at the front end of the vehicle and a lower grille which is disposed at a bumper opening in the bumper face. The bumper face is provided with: a hook cover (20) which is formed integrally within the bumper opening with the bumper face and then separated from the bumper face; and a hook cover holding mechanism (26) which is formed integrally within the bumper opening with the bumper face and which supports and affixes in a removable manner the hook cover (20). The hook cover (20) has: a cover body (40) which closes a hook cover mounting section provided to the bumper face; and a cover engagement claw (32) which is engaged with a bumper engagement section provided to the hook cover mounting section. The hook cover holding mechanism (26) has a holding engagement claw (34) with which the cover engagement claw (32) is engaged in a supported manner when the hook cover (20) is elastically deformed.

An object of the invention is to prevent pinhole defects of single-crystalline silicon while decreasing carbon concentration in the second piece of single-crystalline silicon and thereafter in multi pulling method. The solution is to repeat a step heating and melting silicon raw materials filled in a quartz crucible 12 in a chamber 10 utilizing a heater 15 and a step pulling up a single-crystalline silicon 2 from a silicon melt 3 in the quartz crucible 12 so as to fabricate a plurality of single-crystalline silicon 2 utilizing the same quartz crucible 12. The furnace pressure in the chamber 10when melting the supplementary silicon raw materials provided into the quartz crucible 12 for pulling up the second single-crystalline silicon 2 and thereafter is set to be higher than the furnace pressure in the chamber 10 when melting the silicon raw materials provided into the quartz crucible 12 for pulling up the first single-crystalline silicon 2.

A method of fabricating a semiconductor device capable of suppressing defective etching in formation of a deep trench also when the number of polishing steps is reduced is obtained. This method of fabricating a semiconductor device comprises steps of forming a first trench on an element isolation region of a semiconductor substrate, forming a first film consisting of an insulator film to fill up the first trench, forming a second trench larger in depth than the first trench in the first trench, forming an embedded film in the second trench and substantially simultaneously polishing an excess depositional portion of the first film and an excess depositional portion of the embedded film.

Provided are a laminated glass which has a reduced occurrence of voids and accumulation of liquid crystal, and a production method for the laminated glass. Also provided is a laminated glass which canprevent deterioration of a sealing material. This laminated glass 1 comprises a first glass plate 33A, a first intermediate film 31A, a liquid crystal film 10, a second intermediate film 31B, and a second glass plate, which are layered and disposed in this order, wherein the first glass plate 33A and the second glass plate 33B have a larger outer shape than that of the liquid crystal film 10, anda spacer 32 is provided in at least a portion of a region which is interposed between the first glass plate 33A and the second glass plate 33B and in which the liquid crystal film 10 is not disposed.

An electric-field blocking film is provided between a BL insulation film and BL insulation film of a transistor, and a blocking film includes those three layers. The electric-field blocking film blocks an electric field produced by a drain electrode, a source electrode, and an n+-Si film. Even if misalignment of the drain electrode, the source electrode, and the n+-Si film in each drive transistor varies to make a portion overlying an i-Si film larger, therefore, the electric field at this portion is blocked by the electric-field blocking film, thereby making a variation in characteristic smaller.

The present invention relates to a method for producing an electrode for a solid state battery. The manufacturing method includes: coating a slurry containing a conductive material and a polymer on at least one surface of the current collector, followed by drying to form a PTC resistor layer; Pressing process A1 in which the current collector is pressed with a maximum pressure of a1; pressing process B in which the electrode active material member having at least the electrode active material layer but not the PTC resistor layer is pressed with a maximum pressure of b and the current collector formed with the PTC resistor body layer and the electrode active material member are stacked so that the PTC resistor body layer is in contact with the electrode active material layer, thereby obtaining a solid-state battery electrode process, in Each maximum pressure applied in the pressing process B and the pressing process A1 satisfies the following relationship: b>a1.

The invention provides a method of manufacturing a semiconductor device. A contact member can be reliably joined. A pressing region (4a) set on the main surface of a flat-plate-shaped pressing tool (4) is disposed on contact members (2a-2c). Then, while heating, the pressing region (4a) of the pressing tool (4) is tilted in accordance with warpage occurring in a laminated substrate (1), and the contact members (2a-2c) are pressed toward the laminated substrate (1). As a result, when pressing is performed for bonding the contact members (2a-2c), the contact members (2a-2c) can be reliably pressed against the laminated substrate (1) even if warpage occurs in the laminated substrate (1) due to heating and the positions of the contact members (2a-2c) are shifted.

The objective of the invention is to provide a method for producing a piezoelectric ceramic and a piezoelectric element where their burning temperatures can be sufficiently lowered without adding an additive or the like, a method for lowering burning temperature at a burning step in piezoelectric ceramic production and the piezoelectric element which can be obtained by the methods. The method for producing the piezoelectric ceramic comprises a mixing step to prepare a powdery raw material mixture being mixed with a raw material containing Pb, Zr and Ti and a burning step to burn the raw material mixture. The raw material mixture being satisfied with the following equations denoted as D50<=0.6 [mu]m (1) and D90-D10<=0.4 [mu]m (2) (wherein, D50 is a mean particle diameter; D90 is a 90% cumulation particle diameter; D10 is a 10% cumulation particle diameter) is prepared at the mixing step.

A vehicle front structure includes: a bumper face disposed at a vehicle front end; and a lower grill disposed at a bumper opening section of the bumper face. The bumper face includes: a hook cover (20), after formed integrally with the bumper face within the bumper opening section, separated from the bumper face; and a hook cover holding mechanism (26) formed within the bumper opening section integrally with the bumper face to detachably fix the hook cover (20). The hook cover (20) includes: a cover body section (40) for closing a hook cover attachment portion in the bumper face; and a cover snap-fit claw (32) for snap-fitting onto a bumper engaging portion in the hook cover attachment portion. The hook cover holding mechanism (26) includes a hold latch nail (34) for engaging with the cover snap-fit claw (32) by resilient deformation of the hook cover (20).

PURPOSE: A manufacturing method of light guide plates is provided to reduce the brightness smudge placing around a light incoming unit in which the light is incoming. CONSTITUTION: A light guide plate member(11) has four sides(S31-S34) intersecting in an exit side(S1), a rear side(S2) of an opposite side of the exit side, and the exit side and the rear side. The four sides S31~S34 are figured by orthogonally crossing the exit side and the rear side. In the rear side of the light guide plate member a plurality of light reflection dot(12) is formed. In order to exit the light of a uniform plane shape from the exit side efficiently, the light reflection dot is small in an incoming light unit side close to a light source(3) and gets bigger as the light reflection dot goes further from the light source. The light reflection dot is formed in a virtual grid regularly arranged in two dimension through a front side of the rear side.

The purpose of the present invention is to provide: a silicon-containing polymer composition to be treated, which contains a metal impurity, by treating the silicon-containing polymer composition with an ion exchange resin having a specific structure, whereby the change in weight-average molecular weight ([Delta] Mw) before and after the treatment can be suppressed; the present invention relates to a method for purifying a silicon-containing polymer composition, a silicon-containing polymer composition, and a method for manufacturing a semiconductor device. The present invention is a method for purifying a silicon-containing polymer composition in which the change in weight-average molecular weight ([Delta] Mw) before and after treatment is reduced, characterized by treating a treated silicon-containing polymer composition containing an organic solvent with a gel-type cation exchange resin. The weight-average molecular weight change ([Delta] Mw) before and after the treatment is 70 or less. The ion exchange resin preferably has a highly acidic functional group. The total residual amount of 24 metal elements after the ion exchange treatment is 1 ppb or less.

The present invention provides a thin polarizing plate having a small thickness distribution, a polarizing film including such a polarizing plate, and a method for producing a polarizing plate. A polarizing plate related to a technical solution of the present invention is a polarizing plate in which a dichroic dye is oriented in a polyvinyl alcohol-based resin, and the polarizing plate is characterized in that the thickness of the polarizing plate is 10 μm or less, and the polarizing plate has a thickness of 10 μm or less. direction, the maximum amplitude of the thickness distribution is 0.4 μm or less.