Method of fabricating semiconductor device and method for fabricating electronic device

Abstract

The invention provides a method for producing a semiconductor device of heat load of a substrate, further providing a method for producing a semiconductor device capable of improving the characteristic of the semiconductor element and a method for producing an electronic apparatus. The method for producing the semiconductor device comprises steps as follows: forming a silicon film on a substrate (100); and recrystallizing the semiconductor film using as a heat source flame of a gas burner that uses hydrogen and oxygen gas mixture as a fuel. The treatment of the flame can reduce the heat load to the substrate by increasing the scanning speed of the gas burner corresponding to the substrate, ensuring the solid phase crystal with little deviation of the crystal grain diameter in recrystallization of the silicon film to grow, and improving the characteristic of the semiconductor element.

Description

technical field [0001] The present invention relates to the manufacture of semiconductor devices, and relates to a heat treatment that enables cost reduction in the manufacturing process of semiconductor devices, and homogenization and high quality of device performance of transistors. Background technique [0002] Among the crystallization methods to achieve recrystallization of silicon formed on a substrate by CVD (chemical vapor deposition) methods, there are solid-phase crystal growth methods based on high-temperature heat treatment at 800°C to 1000°C, Laser annealing using excimer laser irradiation, thermal plasma spraying using thermal plasma as a heat source (Patent Document 1, Non-Patent Document 1), and the like. [0003] [Patent Document 1] JP-A-11-145148 [0004] [Non-Patent Document 1] Crystallization of Si Thin Film Using Thermal Plasma Jet and Its Application to Thin-Film Transistor Fabrication, S. Higasi, AM-LCD'04 Technical Digest Papers, p.179 [0005] How...

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Problems solved by technology

[0006] Therefore, there are advantages and disadvantages in the conventional RTA method and laser annealing method, and it is difficult to reduce the thermal load on the substrate while reducing the deviation of device characteristics, etc., to form a high-performance semiconductor device.

[0007] In addition, in the conventional RTA method and laser annealing method, the manufacturing equipment itself is expensive, and its running cost is also high.

In addition, it is difficult to increase the size of the device, and it is difficult to process a large-area substrate at a time

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