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Exposure method for forming IC chip image in intermeidate mask using main mask

An exposure method and pattern exposure technology, which are applied to microlithography exposure equipment, originals for photomechanical processing, and exposure devices for photo-engraving processes, etc., can solve problems such as the inability to reduce the number of master masks, and reduce correction cost effect

Inactive Publication Date: 2002-11-20
KK TOSHIBA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In this way, in the conventional method of producing a master mask for drawing a pattern with a large area on the reticle 101, since there is no repeatability in the pattern of the cutting area 102, although there are repeatable patterns in the pattern, Functional element A is also irrelevant, and the number of master masks 103 cannot be reduced

Method used

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  • Exposure method for forming IC chip image in intermeidate mask using main mask
  • Exposure method for forming IC chip image in intermeidate mask using main mask
  • Exposure method for forming IC chip image in intermeidate mask using main mask

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Embodiment Construction

[0054] Preferred Mode of Carrying Out the Invention

[0055] Before describing the embodiment, first, a schematic configuration of an exposure apparatus used in the present invention will be described. Fig. 2 is a perspective view showing a schematic structure of an exposure apparatus used in the present invention. As shown in FIG. 2 , light irradiated from a light source 200 is incident on a mechanical shade (movable shade) 201 .

[0056] The mechanical shade 201 blocks light irradiated from the light source 200 to limit the exposure area (range) of the master mask 1 . The mechanical shade 201 is composed of, for example, an X shade 201X movable in the X direction, and a Y shade 201Y movable in the Y direction. Furthermore, by using these X shades 201X and Y shades 201Y, the size of the window 202 through which light passes is varied in various ways, and the exposure area is appropriately limited. The light restricted by the mechanical shade 201 is incident on the layer fi...

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Abstract

A method for manufacturing a master mask, which is used for exposing, on an object to be exposed (2), a pattern having a size larger than an area that can be exposed at one time. A pattern having a size larger than an area that can be exposed at one time is divided into an area (4) with low repeatability and an area (A) with high repeatability. Secondly, the pattern of the aforementioned low-repeatability region (4) is drawn on at least one first master mask (1-5, 1-6). The pattern of the above-mentioned highly repeatable region (A) is drawn on at least one second master mask (1-1 to 1-4).

Description

technical field [0001] The present invention relates to a master mask, a method for manufacturing the same, an exposure method using the mask, and a method for manufacturing a semiconductor device using the exposure method. More specifically, it relates to a master mask used when exposing a pattern having a size larger than an area that can be exposed at one time on an object to be exposed, for example, for producing a reticle, and a method for manufacturing the same; Master mask, exposure method for forming an IC chip pattern on a reticle using an exposure replication apparatus; method for manufacturing a semiconductor device using a reticle formed by the exposure method to form an etching mask or a photoresist pattern and a method of manufacturing a semiconductor device using the photoresist patterned by the above exposure method as a mask. Background technique [0002] A conventional exposure method for forming a pattern on a reticle using an exposure copying apparatus w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/68G03F1/70G03F1/76G03F7/20H01L21/027
CPCG03F7/70466G03F1/00G03F1/50H01L21/027
Inventor 姜帅现井上壮一
Owner KK TOSHIBA
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