Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing silicon monocrystal

A manufacturing method and technology of single crystal silicon, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as defects, and achieve the effect of reducing carbon concentration and preventing poor pinholes

Active Publication Date: 2018-02-16
SUMCO CORP
View PDF15 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a phenomenon becomes a problem especially when reducing the furnace internal pressure at the time of raw material melting in order to prevent pinhole defects of single crystal silicon.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing silicon monocrystal
  • Method for producing silicon monocrystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

[0025] figure 1 It is a longitudinal sectional view showing the structure of a silicon single crystal pulling device according to an embodiment of the present invention.

[0026] Such as figure 1 As shown, the single crystal silicon pulling device 1 includes: a chamber 10; a heat insulating material 11 arranged along the inner surface of the chamber 10; a quartz crucible 12 arranged in the center of the chamber 10; a base 13 made of carbon , supporting the quartz crucible 12; the rotating support shaft 14 supports the pedestal 13 in a liftable manner; the heater 15 is arranged around the pedestal 13; the substantially inverted conical heat shield 16 is arranged on the pedestal 13 above; a wire 17 for single crystal pulling is disposed above the base 13 and coaxial with the rotation support shaft 14 ; and a wire coiling mechanism 18 is disposed abov...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An object of the invention is to prevent pinhole defects of single-crystalline silicon while decreasing carbon concentration in the second piece of single-crystalline silicon and thereafter in multi pulling method. The solution is to repeat a step heating and melting silicon raw materials filled in a quartz crucible 12 in a chamber 10 utilizing a heater 15 and a step pulling up a single-crystalline silicon 2 from a silicon melt 3 in the quartz crucible 12 so as to fabricate a plurality of single-crystalline silicon 2 utilizing the same quartz crucible 12. The furnace pressure in the chamber 10when melting the supplementary silicon raw materials provided into the quartz crucible 12 for pulling up the second single-crystalline silicon 2 and thereafter is set to be higher than the furnace pressure in the chamber 10 when melting the silicon raw materials provided into the quartz crucible 12 for pulling up the first single-crystalline silicon 2.

Description

technical field [0001] The present invention relates to a method for producing silicon single crystals based on the Czochralski method (hereinafter referred to as "CZ method"), and more particularly to a method of so-called multi-stage crystal pulling that uses the same quartz crucible to continuously produce multiple silicon single crystals. Background technique [0002] A multi-stage crystal pulling method is known as a method for producing single crystal silicon by the CZ method (for example, refer to Patent Document 1). In the multi-stage crystal pulling method, after the single crystal silicon is pulled, the silicon raw material is additionally supplied into the same quartz crucible and melted, and the single crystal silicon is pulled from the obtained silicon solution, and this raw material supply process is repeated. With the single crystal pulling process, multiple single crystal silicon is produced from a quartz crucible. According to the multi-stage crystal pullin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06
CPCC30B15/20C30B29/06C30B15/10C30B15/14
Inventor 梶原薰斋藤康裕金原崇浩片野智一田边一美田中英树
Owner SUMCO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com