The invention discloses a method for preparing texture on the surfaces of
silicon wafers. The method comprises the following steps: the surfaces of the
silicon wafers are cleaned and purified, each two cleaned and purified
silicon wafers are overlapped and placed in a vapor deposition reacting furnace; when the temperature of the vapor deposition reacting furnace is controlled to 1050 to 1200 DEG C and the vacuum degree is controlled in the range of 1*10<-2>Pa to 1*10<-4>Pa,
trichlorosilane and
hydrogen are mixed according to the required reaction
molar ratio of the
chemical equation, the mixture is introduced in the vapor deposition reacting furnace to ensure that
crystalline silicon deposits on the exposed surfaces of each two overlapped silicon wafers and silicon grain texture surfaces are formed; and
nitrogen is introduced after the deposition, the temperature of the vapor deposition reacting furnace is reduced to the
room temperature, the pressure of the furnace is increased to the
atmospheric pressure, and the silicon wafers with the deposited silicon grain texture surfaces are taken out. The thickness of the texture
layers of the silicon grain texture surfaces which are prepared on the surfaces of the silicon wafers by the texture-preparing method of the invention is 5mu m-8mu m, and the average
reflectivity of the surfaces of the silicon wafers to the light with the
wavelength of 300nm-1100nm is 7.5%-8.5%. The silicon grain texture surface
layers can be controlled, the
reflectivity of the silicon grain texture surface is reduced, the production process is simple, and the speed of the
batch production is fast.