124results about How to "Increase impurity concentration" patented technology

A method of manufacturing a semiconductor device includes: the first step of forming a gate electrode over a silicon substrate, with a gate insulating film; and the second step of digging down a surface layer of the silicon substrate by etching conducted with the gate electrode as a mask. The method of manufacturing the semiconductor device further includes the third step of epitaxially growing, on the surface of the dug-down portion of the silicon substrate, a mixed crystal layer including silicon and atoms different in lattice constant from silicon so that the mixed crystal layer contains an impurity with such a concentration gradient that the impurity concentration increases along the direction from the silicon substrate side toward the surface of the mixed crystal layer.

The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N⁺ type substrate having a drain electrode on a lower surface thereof; a gate trench extending from a front surface into the N type epitaxial region; a gate electrode positioned in the gate trench so as to interpose an insulator; a channel region formed on the N type epitaxial region; a source region formed on the channel region; a source electrode formed on the source region; a source trench extending from the front surface into the N type epitaxial region; and a trench-buried source electrode positioned in the source trench so as to interpose an insulator, wherein the source electrode contacts with the trench-buried source electrode.

A field effect transistor includes a nitride semiconductor layer; an In_xAl_yGa_1-x-yN layer (wherein 0<x<1, 0<y<1 and 0<x+y<1) formed on the nitride semiconductor layer; and a source electrode and a drain electrode formed on and in contact with the In_xAl_yGa_1-x-yN layer. The lower ends of the conduction bands of the nitride semiconductor layer and the In_xAl_yGa_1-x-yN layer are substantially continuous on the interface therebetween.

A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed.

A wide bandgap insulated gate semiconductor device includes a semiconductor substrate made of semiconductor having a bandgap wider than silicon; n⁻ drift layer over the semiconductor substrate; p-channel regions selectively disposed over the drift layer; n⁺ semiconductor regions selectively disposed in respective surfaces in the channel regions; a plurality of p⁺ base regions in contact with bottoms of the respective channel regions; a protruding drift layer portion that is n-type region interposed between the p-channel regions and the p⁺ base regions thereunder; a gate electrode formed, through a gate insulating film, on the protruding drift layer portion and on respective surfaces of the p-channel regions; a source electrode in contact with the n⁺ semiconductor regions in the channel regions; and a p⁺ floating region inside the protruding drift layer portion, having side faces respectively facing side faces of the second conductivity type base regions, wherein respective gaps between the p⁺ base regions and the p⁺ floating region defined by the respective side faces have a wide portion and a narrow portion.

A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. The vertical MOSFET according to the invention includes an alternating-conductivity-type drain drift layer on an n⁺-type drain layer as a substrate. The alternating-conductivity-type drain drift layer is formed of n-type drift current path regions and p-type partition regions alternately arranged laterally with each other. The n-type drift current path regions and p-type partition regions extend in perpendicular to n⁺-type drain layer. Each p-type partition region is formed by vertically connecting p-type buried diffusion unit regions U_p. The n-type drift current path regions are residual regions, left after connecting p-type buried diffusion unit regions U_p, with the conductivity type thereof unchanged. The alternating-conductivity-type drain drift layer is formed by repeating the step of epitaxial layer growth and the step of implanting p-type impurity ions and by diffusing the impurity ions at once from the impurity sources located on multiple levels.

A semiconductor device which eases an electric field at a drift portion without a reduction in impurity concentrations, and has a high withstand voltage and a low on-resistance, wherein, when a rated voltage is applied between a body region and a drain region formed on an insulating semiconductor substrate, the thicknesses of two, p-type and n-type, drift regions sandwiched between the body and drain regions are selected so as to completely deplete the drift regions.

A method for fabricating a semiconductor device includes: forming an impurity junction area within an area of the semiconductor substrate; forming a contact hole which partially exposes a surface the impurity junction area; and performing an additional ion implant process to implant impurity ions into the impurity junction area exposed through the contact hole, thereby increasing an impurity concentration of a surface portion of the impurity junction area.

A trench gate power semiconductor device (100) of the present invention is provided with: an n--type drift layer (114); a p-type body layer (120); a groove (124); an n+-type source region (132); a gate insulating film (126) that is formed on the inner peripheral surface of the groove (124); a gate electrode film (128) that is formed on the inner peripheral surface of the gate insulating film (126); and a source electrode layer (136) that is formed to be in contact with the source region (132), while being insulated from the gate electrode film (128). In the drift layer (114), a region sandwiched between two adjacent grooves (124) is provided with a p-type buried region (140) that is in contact with the body layer (120) and extends deeper than the grooves (124). In the buried region (140), the depth position at which the p-type impurity concentration is maximum is located deeper than the midway between the bottom surface (P2) of the body layer (120) and the bottom surface (P3) of the buried region (140). This trench gate power semiconductor device (100) has high reverse breakdown voltage and further lower on-resistance.

The relationship between a distance Ls between a base layer and an n type buffer layer formed on the surface of a drift layer and the thickness t of a semiconductor substrate in contact with the drift layer is set to Ls≦t≦2×Ls. A loss upon turn-off of a high breakdown voltage semiconductor device can be reduced without deteriorating breakdown voltage characteristics.

In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.

Provided is a semiconductor device and a method of manufacturing a semiconductor device. In the semiconductor device, high-concentration n type impurity regions are formed respectively below gate electrodes. By setting a gate length to be smaller than a depth of channel regions, pn junction interfaces formed of adjacent side faces of the n type impurity regions and the channel regions can be substantially vertical to a top surface of a base. With this configuration, even when reduction in size is achieved in a super junction structure, a distance between the channel regions (i.e. a current path below the gate electrode) is not reduced unnecessarily. Accordingly, an increase in resistance can be prevented. In addition, depletion layers uniformly expand in the n type semiconductor regions, and impurity concentration of the regions can be increased consequently. Accordingly, reduction in resistance can be achieved.

Disclosed herein are systems and methods for in-situ measurement of impurities on metal slugs utilized in electron-beam metal evaporation/deposition systems, and for increasing the production yield of a semiconductor manufacturing processes utilizing electron-beam metal evaporation/deposition systems. A voltage and/or a current level on an electrode disposed in a deposition chamber of an electron-beam metal evaporation/deposition system is monitored and used to measure contamination of the metal slug. Should the voltage or current reach a certain level, to the deposition is completed and the system is inspected for contamination.

The present invention discloses a method for manufacturing a semiconductor device, comprising the steps of: providing a semiconductor substrate on which cell strings are formed and in which a plurality of conductive regions are formed; sequentially forming a first interlayer insulation film and a first etch barrier film on the semiconductor substrate; forming a plurality of contact holes by exposing the plurality of conductive regions formed in the semiconductor substrate, wherein an impurity concentration of the conductive regions is reduced due to the process for forming the contact holes; filling a metal material in the contact holes and forming a plurality of contact plugs; sequentially forming a second interlayer insulation film, a second etch barrier film and a third interlayer insulation film over a resulting structure including the contact plugs; forming a plurality of metal line patterns, wherein the metal line patterns pass through the third interlayer insulation film, the second etch barrier film and the second interlayer insulation film and contact to the contact plugs; forming a fourth interlayer insulation film over a resulting structure including the plurality of metal line patterns; forming a plurality of metal line contact holes by patterning the fourth interlayer insulation film; and forming a plurality of metal line contact plugs in the plurality of metal line contact holes by filling a metal material in the metal line contact holes.

To provide a semiconductor device and a method of manufacturing the same capable of suppressing, when a plurality of MIS transistors having different absolute values of threshold voltage is used, the reduction of the drive current of a MIS transistor having a greater absolute value of threshold voltage.

The threshold voltage of a second nMIS transistor is greater than the threshold voltage of a first nMIS transistor and the sum of the concentration of lanthanum atom and the concentration of magnesium atom in a second nMIS high-k film included in the second nMIS transistor is lower than the sum of the concentration of lanthanum atom and the concentration of magnesium atom in a first nMIS high-k film included in the first nMIS transistor.

The invention relates to an LED chip and a manufacturing method thereof. The LED chip comprises a substrate and a luminous epitaxial stack on the substrate, wherein the luminous epitaxial stack sequentially comprises an n-shaped interface layer, a luminous layer on the n-shaped interface layer and a p-shaped interface layer on the luminous layer. The area of the p-shaped interface layer is same as that of the luminous layer and the n-shaped interface layer; the p-shaped interface layer is provided with a p electrode; the back surface of the substrate is provided with an external electrode layer; and the side wall of the n-shaped interface layer is electrically connected with the external electrode layer by a conductive part.

A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor by MOCVD while doping an anti-surfactant, wherein a thickness of the first layer is equal to or thinner than 2 μm; forming a second layer on the first layer from a group III nitride semiconductor by MOCVD while doping at least one of surfactant and an anti-surfactant; and controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer.

A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, such as a DRAM, is disclosed. In a first aspect of the present invention, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In a second aspect, the Y-select signal line overlaps the lower electrode layer of the capacitor element. In a third aspect, a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. In a fourth aspect, the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it. In a fifth aspect, the capacitor dielectric film is a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure. In sixth and seventh aspects, wiring is provided. In the sixth aspect, an aluminum wiring layer and a protective (and/or barrier) layer are formed by sputtering in the same vacuum sputtering chamber without breaking the vacuum between forming the layers; in the seventh aspect, a refractory metal, or a refractory metal suicide QSi.sub.x, where Q is a refractory metal and 0<x<2, is used as a protective layer, for an aluminum wiring containing an added element (e.g., Cu) to prevent migration.