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92results about How to "Electrical connection" patented technology

Novel bus bar for electric connection and middle and battery module comprising the same

Disclosed herein are a bus bar that simultaneously performs the electrical connection between a plurality of unit cells and the detection of voltage of the unit cells in a battery module having the unit cells mounted therein, wherein the bus bar includes: vertical bent parts formed by bending opposite ends of a strip-shaped bar body in the same direction, respectively, the vertical bent parts being provided with coupling grooves or protrusions; and a horizontal bent part formed by bending one of the vertical bent parts such that the horizontal bent part is parallel with the bar body, and a medium- or large-sized battery module including a plurality of unit cells, wherein the electrical connection between the unit cells and the detection of voltage of the unit cells are simultaneously performed using the bus bar. It is not necessary to use additional connecting members for detecting the voltage of unit cells when the bus bar according to the present invention is used in a battery module or a battery pack. Consequently, the battery module or the battery pack can be manufactured in a compact structure. Also, the electrical connection and the mechanical coupling are easily accomplished in spite of the compact structure. Furthermore, the electrical characteristics, such as electrical resistance at connected regions after the electrical connection, and the mechanical strength against external impacts or vibrations are excellent. In addition, it is possible to prevent occurrence of short circuits, which may be caused by a user or an operator, during a manufacturing process of the battery module or the battery pack or during a maintenance process of the battery module or the battery pack.
Owner:LG ENERGY SOLUTION LTD

Bumping process, bump structure, packaging process and package structure

InactiveUS20050214971A1Electrical connection reliableIncrease heightPrinted circuit assemblingFinal product manufactureEngineering
A bumping process, a bump structure, a packaging process and a package structure are described. The bump structure comprises a first solder portion, a second solder portion and a conductive layer. The second solder portion is disposed on the first solder portion and the conductive layer is disposed between the first solder portion and the second solder portion. The bumping process produces a bump structure having a greater height. The bumping process can also be applied in a package process to form a package structure having a highly reliable connection between a chip and a packaging substrate.
Owner:ADVANCED SEMICON ENG INC

Back-light apparatus for liquid crystal display device

A back-light apparatus for a display includes: a plurality of light emitting diodes attached on a substrate; a first common line mounted on the substrate to commonly connect first electrodes of the light emitting diodes; a second common line mounted on the substrate to commonly connect second electrodes of the light emitting diodes; a plurality of third lines connected to preceding second electrodes of the light emitting diodes and succeeding first electrodes of the light emitting diodes; first and second selection switches disconnecting the first common line and the second common line so that the light emitting diodes are connected in parallel; third selection switches for disconnecting the third lines so that the light emitting diodes are connected in series; a power unit to supply power to the light emitting diodes; and a control unit to control the first, second and third selection switches for the light emitting diodes.
Owner:LG DISPLAY CO LTD

Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring

A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, such as a DRAM, is disclosed. In a first aspect of the present invention, the impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration of semiconductor regions of MISFETs of peripheral circuitry. In a second aspect, the Y-select signal line overlaps the lower electrode layer of the capacitor element. In a third aspect, a potential barrier layer, provided at least under the semiconductor region of the switching MISFET to which the capacitor element is connected, is formed by diffusion of an impurity for a channel stopper region. In a fourth aspect, the dielectric film of the capacitor element is co-extensive with the capacitor electrode layer over it. In a fifth aspect, the capacitor dielectric film is a silicon nitride film having a silicon oxide layer thereon, the silicon oxide layer being formed by oxidizing a surface layer of the silicon nitride under high pressure. In sixth and seventh aspects, wiring is provided. In the sixth aspect, an aluminum wiring layer and a protective (and/or barrier) layer are formed by sputtering in the same vacuum sputtering chamber without breaking the vacuum between forming the layers; in the seventh aspect, a refractory metal, or a refractory metal suicide QSi.sub.x, where Q is a refractory metal and 0<x<2, is used as a protective layer, for an aluminum wiring containing an added element (e.g., Cu) to prevent migration.
Owner:HITACHI LTD
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