154results about How to "Short circuit" patented technology

The battery system has a battery block 2 with a plurality of battery cells 1 that are rectangular batteries stacked with intervening insulating separators 15, and that battery block 2 is held by fastening components 3. The fastening components 3 are provided with a pair of endplates 4 disposed at the ends of the stacked battery cells 1, and metal bands 5 on both sides of the battery block 2 connected at both ends to the endplates 4. An insulating separator 15 has an insulating plate section 15X, which intervenes between adjacent battery cells 1, and insulating walls 15C, which cover both battery cell 1 side-walls, formed from plastic as a single-piece. In this battery system, insulating plate sections 15X are sandwiched between battery cells 1, and the insulating walls 15C are disposed between battery cell outer side-walls and metal bands to insulate the battery cells from the metal bands.

A recessed light fixture includes a thermally protected light emitting diode (“LED”) module. The thermally protected LED module includes a thermal protector positioned in series between a source of electrical power and an LED driver and is configured to open a circuit to prevent power from being supplied by the power source to the LED driver for an LED package when a thermal rating or activation temperature of the thermal protector is exceeded. For example, the maximum operating temperature of the LED driver may be 90 degrees Celsius, and the thermal rating of the thermal protector may be 80 degrees Celsius, and when the temperature of the driver or a mounting bracket upon which the driver is mounted reaches 80 degrees Celsius, the thermal protector opens a circuit and removes current flow from the power source to the driver, thereby removing power to the LED package.

A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

The invention is related to an electronic cigarette charging dock, an electronic cigarette case and a method for use thereof, the charging dock comprising a positive electrode elastic pin and a negative electrode elastic pin which are cylindrical and used for being connected to a positive electrode and a negative electrode of the battery to form a charging circuit. The elastic pins need only be arranged around the base of the charging dock, and the manner of assembly is simple; while the elastic pins are being used, the inelastic parts of the elastic pins do not deform elastically to affect a normal use. A plurality of elastic pins are arranged parallel to each other and retract only in the axial direction when in use, thus preventing short circuits.

Disclosed are a separator for lithium ion secondary batteries, having an inorganic layer formed from inorganic particles, characterized in that the inorganic particles have a particle diameter distribution in which the 50% cumulative particle diameter D50 is in the range of 100 nm to 500 nm, the 10% cumulative particle diameter D10 is 0.5D50 or more, and the 90% cumulative particle diameter D90 is 2D50 or less; a method for manufacturing the separator; and a lithium ion secondary battery using the separator. When the separator is used, there can be produced a lithium ion secondary battery in which a short circuit caused by contraction or melting can be definitely prevented, as well as the current density applied to the electrodes during charging and discharging is uniform so that charging and discharging can be efficiently achieved.

A light-emitting element has a layer including an organic material between a first electrode and a second electrode, and further has a layer including a metal oxide between the second electrode and the layer including the organic material, where these electrodes and layers are laminated so that the second electrode is formed later than the first electrode. The light-emitting element is suppressed damage caused to a layer including an organic material during deposition by sputtering and a phenomenon such as short circuit between electrodes.

An electronic cigarette comprises an atomization core comprising a connector, a heating wire assembly, an internal electrode, an elastic sleeve, an atomization cap, and a first electronic wire and second electronic wire; a receiving recess is arranged on the internal electrode; the first electronic wire is accommodated in the receiving recess and is electrically connected to the internal electrode; the elastic sleeve is retained on the inside wall of the atomization cap to hold the second electronic wire between the inside wall of the atomization cap and the outside wall of the flexible sleeve; the atomization cap is electrically connected to the other end of the battery assembly through the connector; one end of a vent pipe elastically abuts against one end of the elastic sleeve. The electronic cigarette has the advantages of easy replacement of the heating wire assembly, easy addition of smoke oil, and stable electrical connections.

A process for simultaneously coating and forming a body. The process includes moving two mold halves into contact with one another; introducing an injection-molding material into the mold halves so that a molding is formed; evacuating the molding; admitting a gas into the molding; igniting a plasma in the molding so that a coating is deposited on the inner side of the molding; and moving the mold halves apart so that the molding drops out.

A multi-chip stack package mainly comprises a substrate, a first chip, a redistribution structure and at least one second chip. The first chip is disposed on the substrate by an active surface facing upwards. The redistribution structure comprises a plurality of first intermediate pads, a plurality of second intermediate pads and a plurality of external pads. The first intermediate pads, the second intermediate pads, and the external pads are formed on the first active surface of the first chip, wherein the first intermediate pads and the second intermediate pads are electrically connected with each other. The second chip is disposed on the redistribution structure, and electrically connected to the first intermediate pads. The second intermediate pads are electrically connected to the substrate through a plurality of bonding wires, so that the second chip and the substrate are electrically conducted, and the connection length of the bonding wires is reduced.

Apply heat to thermoplastic resin film, which is eventually to become an insulating resin layer, and press the film against a mold for forming grooves on a surface of the film. Next, press-fit an electronic component into the resin film from a back-face of the film, thereby exposing electrodes of the component from a bottom of the grooves. Then cool the film for curing. Peel the film off the mold, then fill the grooves with conductive paste, and cure the paste for forming circuit patterns. The foregoing procedure allows bringing the electrodes positively into conduction with the circuit patterns of a circuit board incorporating the electronic component, and achieving a narrower pitch between routings of the circuit patterns.

The present invention relates to an organic semiconductor thin film suitably employed in electronics, photonics, bioelectronics, or the like, and a method for forming the same. The present invention further relates to a solution for an organic semiconductor used to form the organic semiconductor thin film and an organic semiconductor device using the organic semiconductor thin film. The transistor of the present invention is manufactured by forming sequentially a gate electrode (2), an insulator layer (3), a source electrode and drain electrode (4, 4) on a glass substrate (5), applying thereto a 0.05% (by mass) solution of pentacene in o-dichlorobenzene and drying the solution to form an organic semiconductor thin film (1). The present invention provides a transistor with superior electronic characteristics because the organic semiconductor thin film (1), which can be formed easily at low cost, is almost free of defects.

The present invention relates to a pressure-sensitive adhesive tape for battery containing: a substrate and a pressure-sensitive adhesive layer laminated on at least one surface of a substrate, in which the pressure-sensitive adhesive layer is laminated on the substrate, 0.5 mm or more inside from both edges of the substrate, and in which the pressure-sensitive adhesive tape has a 180° peeling pressure-sensitive adhesive force at 23° C. being 0.1 N / 10 mm or more, and has a slippage distance after a pressure-sensitive adhesive layer side of the pressure-sensitive adhesive tape is attached to a phenolic resin plate (attaching area: 10 mm×20 mm), followed by applying a load of 500 g thereto at 40° C. for 1 hour being 0.2 mm or less.

Method for varying the power consumption of capacitive loads, in particular compact fluorescent lamps which are operated using a phase-gating dimmer by a converter (step-up converter). According to the invention, in the case of a nonconducting dimmer (i.e. no system power supply to the load), the switch (T1) in the converter (step-up converter) is closed. In the case of a conducting dimmer (i.e. when a system voltage is applied to the load), the step-up converter operation takes place until a predetermined maximum voltage is reached across the smoothing capacitor of the load.

A main object is to provide a manufacturing method of an organic EL element having excellent light emission characteristics, and capable of facilitating the organic EL layer patterning operation and obtaining preferable wettability change. To attain the object, the present invention provides a manufacturing method of an organic EL element comprising: a charge injecting and transporting layer forming step of forming a charge injecting and transporting layer containing a material having a liquid repellent functional group so as to have the wettability change by the action of the photocatalyst accompanied by the energy irradiation on a substrate with an electrode layer formed; a wettability changed pattern forming step of forming a wettability changed pattern with the wettability of the charge injecting and transporting layer surface changed by the energy irradiation in pattern after disposing the photocatalyst processing layer substrate, in which the photocatalyst processing layer containing at least a photocatalyst is formed on a base member, with a gap capable of providing the action of the photocatalyst accompanied by the energy irradiation to the charge injecting and transporting layer; and an organic EL layer forming step of forming an organic EL layer, which includes at least a light emitting layer, on the wettability changed pattern.

A liquid crystal display (LCD) including: a display panel; a backlight unit to radiate light to the display panel; a mold frame surrounding the backlight unit and supporting the display panel; a housing to receive the display panel, backlight unit, and mold frame; and a resin unit provided between the display panel and the housing. A receiving groove is formed below the resin unit, by sloped surfaces of the mold frame and side walls of the housing.

A short circuit with an adjacent hole is prevented. By enlarging a hole diameter in the lower part of the hole, a stable storage node is formed without causing a decrease in capacitance. Provided is a method for production of a semiconductor device, comprising the steps of: forming the second hole in the second insulating film to a depth at which a bowing shape does not occur by carrying out anisotropic etching; forming the fourth film on the side surfaces of the first and the second holes; forming the second hole of an aspect ratio greater than 12 by extending the second hole until the first insulating film is exposed by carrying out anisotropic etching; and extending by isotropic etching a side surface portion of the second hole on which the fourth film is not formed.

The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

The coaxial line comprises a coaxial inner conductor and a first dielectric layer encompassing the coaxial inner conductor and which is surrounded by a coaxial outer conductor. The coplanar line comprises a second dielectric layer with a coplanar inner conductor and a first and second coplanar outer conductor applied to the front side thereof and with a metallization layer followed by a substrate carrier layer on the rear side thereof. The first and second coplanar outer conductors are separated from the coplanar inner conductor by the second dielectric layer and the coaxial inner conductor is connected to the coplanar inner conductor and the coaxial outer conductor is connected to the first and second coplanar outer conductors. When high bit rate data signals are transmitted via the connecting point of the coaxial line and the coplanar line, the capacitative power is increased and undesirable reflections occur. In order to avoid this, a recess is provided in the metallization layer, beginning at the point of connection between the coaxial line and the coplanar line and extending in an approximately symmetrical manner with respect to the coplanar inner conductor, tapering in the direction of the coplanar inner conductor as the distance from the point of connection increases.

The present invention provides a color filter substrate for preventing an electrical short circuit between an electrode and other members at a place upper than the colored transparent layers disposed in a stack, and further preventing electrical disconnection on colored transparent layers other than the colored transparent layers in a stack, in the case where colored transparent layers are disposed in a stack and an electrode is stacked over the entire surface. The color filter substrate of the present invention comprises:colored transparent layers disposed side by side; andcolored transparent layers disposed in a stack,wherein an electrode is disposed at a place upper than the colored transparent layers disposed side by side and an electrode is disposed at a place upper than the colored transparent layers disposed in a stack,the colored transparent layers disposed in a stack include a colored transparent layer having a reverse tapered shape, andthe uppermost layer of the colored transparent layers disposed in a stack has a forward tapered shape.

The circuit board is capable of tightly bonding a cable layer on a base member even if thermal expansion coefficients of the base member and the cable layer are significantly different. The circuit board comprises: the base member; and the cable layer being laminated on the base member with anchor patterns, which are electrically conductive layers formed on a surface of the base member.

An electronic device includes an electronic part and a wiring substrate. The electronic part includes a rewiring substrate, a semiconductor chip, and solder bumps arranged in a matrix form. The wiring substrate includes a wire and lands arranged in a matrix form corresponding to the solder bumps. Each of the lands is coupled with corresponding one of the solder bumps so as to form connection portions. The connection portions include nonfunctional connection portions that do not provide an electric connection between the semiconductor chip and the wire. The lands forming the nonfunctional connection portions include a power source land and a ground land arranged next to each other in a row direction or a column direction. The lands that are arranged next to the lands forming the nonfunctional connection portions in the row direction or the column direction are set to signal lands.

A card manufacturing technique and the resulting card are provided. The card has a ground and / or power layer extending to the edges of a circuit board for electrostatic discharge protection but also has gaps at the edge of the ground and / or power layer to avoid short circuiting with conductive segments of another layer deformed when the card is trimmed during manufacture.

A method for fabricating a semiconductor device includes the steps of: (a) forming a first insulating film having moisture absorbency on a substrate; (b) forming a dummy contact hole and a contact hole in the first insulating film; (c) heat-treating the substrate, thereby removing water contained in the first insulating film; and (d) forming a contact and a dummy contact. The heat treatment in the step (c) removes water contained in the first insulating film through the contact hole and the dummy contact hole.

An all-solid-state secondary battery includes a positive electrode active substance layer; a negative electrode active substance layer; and an inorganic solid electrolyte layer, in which at least one of the positive electrode active substance layer, the negative electrode active substance layer, or the inorganic solid electrolyte layer contains an inorganic solid electrolyte having conductivity of ions of metal belonging to Group 1 or 2 of the periodic table and a cellulose polymer.

A guide track (3A) includes a guide rail (31) having a guide groove (31a) opened upward in which the pair of guide wheels (23) inserted, and is formed with a pair of guide surfaces (31b) for causing each of the pair of guide wheels (23) to roll at both sides of the traveling course in a width direction; conductor rails (32) that are placed at both sides of the outside of the traveling course in the width direction with respect to the guide groove (31a) to perform contact electricity supply by pressing a power collection shoe (43) of a power collector (4) of the track-based vehicle; a first insulator (33) that is formed of an insulation material and supports the conductor rails (32) with respect to the guide rail; and insulation plates (34) serving as insulation materials that are provided at both sides of the conductor rail (32) in the width direction, and are provided in parallel to the conductor rail (32) and in parallel to a pressing direction of the power collection shoe (43) so as to prevent a short circuit due to contact with the conductor rail (32) in a vertical direction.

In a method of forming a wiring pattern, a plurality of electrical wirings deposited to be multilayered are conductively connected to one another through a conducting post. The method has forming the electrical wiring by discharging a first droplet including a material for forming the electrical wiring, and forming the conducting post by discharging a second droplet including a material for forming the conducting post, wherein a volume of the second droplet is greater than a volume of the first droplet.

A semiconductor memory device comprises a silicon layer having a first diffused region and a second diffused region formed therein, a gate electrode formed through an insulating film on one side of the silicon layer between the first and the second diffused regions, a capacitor formed on said one side of the silicon layer and having a storage electrode connected to the first diffused region, and a bit line formed on the other side of the silicon layer and connected to the second diffused region, whereby a semiconductor memory device of SOI structure can be easily fabricated. The bit line connected to the second diffused region is formed on the other side of the semiconductor layer, whereby the bit line can be arranged without restriction by the structure, etc. of the capacitor. Short circuit between the capacitor and the bit line can be prevented.

A method for fabricating a semiconductor device includes the steps of: (a) forming a first insulating film having moisture absorbency on a substrate; (b) forming a dummy contact hole and a contact hole in the first insulating film; (c) heat-treating the substrate, thereby removing water contained in the first insulating film; and (d) forming a contact and a dummy contact. The heat treatment in the step (c) removes water contained in the first insulating film through the contact hole and the dummy contact hole.