155 results about "Pentacene" patented technology

Acene-thiophene compounds are disclosed that are useful as organic semiconductors. The compounds, when used as the semiconductor layer in organic thin-film transistors exhibit device characteristics, like charge-carrier mobilities and current on/off ratios, that are comparable to those of pentacene. Also described are semiconductor devices comprising at least one compound of the invention; and articles comprising the semiconductor devices such as thin film transistors or transistor arrays, and electroluminescent lamps.

The invention broadens the range of materials and processes that are available for Thin Film Transistor (TFT) devices by providing in the device structure an organic semiconductor layer that is in contact with an inorganic mixed oxide gate insulator involving room temperature processing at up to 150 degrees C. A TFT of the invention has a pentacene semiconductor layer in contact with a barium zirconate titanate gate oxide layer formed on a polycarbonate transparent substrate employing at least one of the techniques of sputtering, evaporation and laser ablation.

An organic electroluminescence device emitting white light which emits white light and exhibits properties sufficient for practical applications, i.e., a high efficiency of light emission and a long life, is provided. The organic electroluminescence device emitting white light comprises a pair of electrodes and a layer of a light emitting medium disposed between the pair of electrodes, wherein the layer of a light emitting medium comprises a light emitting material emitting blue light and a fluorescent compound having at least one structure selected from a fluoranthene skeleton structure, a pentacene skeleton structure and a perylene skeleton structure.

Systems and methods for forming conductive materials. The conductive materials can be applied using a printer in single or multiple passes onto a substrate. The conductive materials are composed of electrical conductors such as carbon nanotubes (including functionalized carbon nanotubes and metal-coated carbon nanotubes), grapheme, a polycyclic aromatic hydrocarbon (e.g. pentacene and bisperipentacene), metal nanoparticles, an inherently conductive polymer (ICP), and combinations thereof. Once the conductive materials are applied, the materials are dried and sintered to form adherent conductive materials on the substrate. The adherent conductive materials can be used in applications such as damage detection, particle removal, and smart coating systems.

An organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving. The organic semiconductor element is formed by providing a gate electrode 101 on the surface of a substrate 102, providing thereon a gate insulating layer 103, providing on the surface of the gate 102 insulating layer 103 an island-shaped protrusion layer 104 having dispersed and island-shaped protrusions with a low surface energy, providing on the island-shaped protrusion layer 104 a source electrode 106 and a drain electrode 107 with a distance therebetween, providing thereon an organic semiconductor layer 105 in contact with the island-shaped protrusion layer 104 and both electrodes 106 and 107, and further providing a protective film 108 on the organic semiconductor layer 105.

The invention provides a field effect transistor device by taking graphene as an electrode and a preparation method thereof. In the device, the material of a source region and a drain region is graphene; the materials of a channel region are various small organic molecules, high polymers and semiconducting polymer materials, such as polythiophene, pentacene, polycyclic aromatic hydrocarbon, perylene imide and the like; and the material of a gate region is highly doped conductive silicone. The device further comprises a gate dielectric layer the material of which is silicon dioxide, silicon nitride and various high-K dielectrics. The nano field effect transistor device can be n-typed, p-typed or amphoteric type, and the device realizes all functions of a macroscopic field effect transistor device at the nanometer level. The transistor device has very high application value in terms of ultrasensitive environmental stimuli response devices, ultrasensitive solar stimuli response devices and the like. In addition, in the fields of molecular electronics and nanometer, the transistor device plays an essential role of promoting the development of ultramicro photoelectric devices with various dimensions at molecular level.

The invention discloses an organic small molecule solar cell with an inversion structure, relating to a solar cell. The organic small molecule solar cell comprises a cathode modification layer (2), an organic small molecule electron acceptor film (3), an electron donor film (4), an anode modification layer (5) and a metal electrode (6) which are sequentially manufactured on a conductive layer of an ITO (Indium Tin Oxide) glass substrate (1). The cathode modification layer (2) adopts a metal material with low work function and the thickness of 1-2nm; the material of the organic small molecule electron acceptor film (3) is C60 or C70; the material of the electron donor film (4) is CuPc or Pentacene; and the material of the anode modification layer (5) is MoO3 with the thickness of 8-10nm. The invention solves the problem of the pollution to the traditional metal electrode.

The present invention relates to an organic monomolecular layer thin film field effect gas sensor and a preparing method of the same. The forming structure of the gas sensor includes a substrate, a gate electrode, a dielectric layer, an active layer and a source-drain electrode from bottom to top, and the active layer is an organic monomolecular thin film layer. In the preparing method, an organic monomolecular thin film layer is evaporated on a dielectric layer by using a vacuum evaporation method; during evaporation, first an evaporating source is heated to a target temperature (such as 123°C), and after the deposition rate is stable, a beam baffle is opened to begin evaporation; evaporation time is controlled to obtain an organic monomolecular thin film layer serving as an active layer. According to the technical solution of the present invention, by means of a gas sensor with a pentacene monomolecular layer serving as an active layer, all pentacene molecules in the active layer can contact the outside world. When the sensor is working, pentacene molecules interact with detected gas directly without obstruction, and this interaction can be sensitively reflected in a change of an output curve of a thin film transistor thereof.

Techniques including steps of: providing a support body; forming an organic semiconductor composition body including an organic semiconductor composition on the support body, no more than 10% by weight of the organic semiconductor composition being pentacene; providing a first organic dielectric composition mobilized in a first liquid medium, the organic semiconductor composition being insoluble in the first liquid medium; and forming a first organic dielectric composition body from the first organic dielectric composition on the organic semiconductor composition body. Techniques in which an organic semiconductor composition body is formed on an organic dielectric composition body. Apparatus having an organic dielectric composition body on an organic semiconductor composition body.

The invention relates to a method for manufacturing organic thin film transistor realizing a patterning and automatic-modification interface in one step, comprising surface treatment of a silicon substrate, formation of an organic semiconductor thin film and configuration of an electrode. The method is characterized in that the formation of the organic semiconductor thin film comprises the following steps of: mixing an organic semiconductor material Tips-pentacene and a high polymer according to a mass ratio of (4:1)-(1:1), dissolving a mixture in an organic solvent to prepare an organic solution with a mass percentage concentration of 0.5-5%, uniformly dripping the organic solution through a dripping film standing method into the silicon substrate with the machined surface and a reserved gold electrode in an inclined angle of 15-30 DEG, and desolventizing and drying to obtain a patterned organic semiconductor thin film with the automatic-modification interface. According to the method disclosed by the invention, a dewetting patterning operation is realized in one step, and an automatic-modification interface layer is generated through phase separation, thus the carrier mobility is improved, and the electric performance of the organic thin film transistor is also improved.

The invention relates to a process of preparing substituted pentacenes, to novel pentacenes prepared by this process, to the use of the novel pentacenes as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors (FETs), electroluminescent, photovoltaic and sensor devices, and to FETs and other semiconducting components or materials comprising the novel pentacenes.

An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

An organic light emitting display (OLED) device includes: an insulating substrate; a first electrode on the insulating substrate; a second electrode on the first electrode; a light-emitting layer between the first electrode and the second electrode; a hole common layer between the first electrode and the light-emitting layer; an electron common layer between the second electrode and the light-emitting layer; and a scattering layer on the insulating substrate and having a non-planar surface, wherein the scattering layer includes at least one of benzene, naphthalene, anthracene, tetracene, pentacene, amine, benzidine, biphenyl, carbazole, pyridine, bipyridine, imidazole, phenanthroline, phenylborane, pyrimidine, or triazine, and the base material of the scattering layer includes a substituent including at least one of a benzoyl group, a carboxyl group, an aminophenoxyl group, a tricabonate group, or a styryl group.

An OFET with pentacene derivatives as semiconductor materials includes Top type and Bottom type. The substituting radicals involve halides (F-, Cl-, Br-, I-). Films can be produced from pentacene derivatives directly, or produced from pentacene derivatives precursor indirectly, by vacuum depositing, rotary coating, throwing, casting, LB method, printing, and ink jetting, etc. The produced OFET has good field effect transition rate and electric current switching ratio stably.

The present application discloses methods for the production of organic compounds comprising a linear series of five fused carbon rings. Such compounds are useful in the production of electronic components, devices and materials. For example the methods disclosed permit the production of 2,9- and 2,10-disubstituted pentacene compounds that present particularly advantageous properties for the manufacture of semiconductor materials, and may be used in devices such as for example thin film transistors and solar cells. Also disclosed are compounds that are excellent candidates for use in the manufacture of semiconductor materials, and other components of electronic systems, by virtue of their solubility, crystal packing geometries, and electronic properties.

A maser assembly includes a pump light source; a maser material including molecules that are excited through the absorption of light (1) from the pump light source, and which subsequently transfer via intersystem crossing (9) into the sublevels of their triplet ground states, so causing a population inversion between two sublevels (16,18); an electromagnetic structure in which the masing material is disposed, and which supports a microwave mode that is both resonant in frequency with and magnetically coupled to the transition between these two sublevels; and where energy is supplied to the microwave mode through stimulated emission (25) across the transition at such a rate as to exceed the mode's electromagnetic losses, the microwave mode being a maser mode. The assembly includes provisions for effecting substantially continuous maser activity during operation of the assembly. The laser crystal may be a (perdeuterated) pentacene in p-terphenyl which is held at room temperature without an additional magnetic field and the dye molecules in the single crystal may be pumped by blue LED with a frequency conversion to the yellow and green with the help of a Ce:YAG fluorescent pump light concentrator.