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Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step

A patterned, organic semiconductor technology that can be used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as carrier traps

Inactive Publication Date: 2012-08-01
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The present invention aims at the defects of carrier traps in the self-assembly patterning method of semiconductor materials, and aims to provide a new method for preparing organic thin film transistors by self-assembly patterning. The technical problem to be solved is to achieve patterning in semiconductor materials. Simultaneous generation of self-modifying interfaces between substrate and semiconductor material via phase separation

Method used

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  • Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step
  • Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step
  • Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step

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preparation example Construction

[0042] (3) Fabrication of organic thin film transistors

[0043] Drop film standing method:

Embodiment 1

[0045] Dissolve Tips-pentacene and polystyrene (PS) at a ratio of 80% / 20% in chlorobenzene at 40°C, let it stand and filter to make a solution with a concentration of 3%, and then homogenize the solution Drop it onto the surface-selectively treated silicon wafer with gold electrodes at an inclination angle of 15°-30°, let it stand until the film is uniform, and post-bake it on a hot stage at 120°C for 30 minutes to prepare a film.

Embodiment 2

[0047] Dissolve Tips-pentacene and polystyrene (PS) at a ratio of 60% / 40% in chlorobenzene at 40°C, let it stand and filter to make a solution with a concentration of 3%, and then homogenize the solution Drop it onto the surface-selectively treated silicon wafer with gold electrodes at an inclination angle of 15°-30°, let it stand until the film is uniform, and post-bake it on a hot stage at 120°C for 30 minutes to prepare a film.

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Abstract

The invention relates to a method for manufacturing organic thin film transistor realizing a patterning and automatic-modification interface in one step, comprising surface treatment of a silicon substrate, formation of an organic semiconductor thin film and configuration of an electrode. The method is characterized in that the formation of the organic semiconductor thin film comprises the following steps of: mixing an organic semiconductor material Tips-pentacene and a high polymer according to a mass ratio of (4:1)-(1:1), dissolving a mixture in an organic solvent to prepare an organic solution with a mass percentage concentration of 0.5-5%, uniformly dripping the organic solution through a dripping film standing method into the silicon substrate with the machined surface and a reserved gold electrode in an inclined angle of 15-30 DEG, and desolventizing and drying to obtain a patterned organic semiconductor thin film with the automatic-modification interface. According to the method disclosed by the invention, a dewetting patterning operation is realized in one step, and an automatic-modification interface layer is generated through phase separation, thus the carrier mobility is improved, and the electric performance of the organic thin film transistor is also improved.

Description

1. Technical field [0001] The present invention relates to a method for preparing an organic thin film transistor (OTFT), in particular to a method for preparing an OTFT by dewetting patterning, specifically a dewetting self-assembly patterning, and simultaneously realizing phase separation to generate self-modification One-step method for preparing OTFT with interface layer. 2. Background technology [0002] An organic thin film transistor (OTFT) is a semiconductor device that uses organic materials instead of traditional silicon semiconductor materials. Compared with silicon-based materials, which are difficult to process and cost high, organic materials can be prepared into solutions and semiconductor devices can be prepared under mild conditions, so they have received more attention and have become the core link in the next generation of display technology. Many display giants such as Samsung and Sony have developed integrated circuits based on organic thin film transis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40
Inventor 邱龙臻冯翔林广庆吕国强
Owner HEFEI UNIV OF TECH
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