221 results about "Aromatic moiety" patented technology

New thyroid receptor ligands are provided which have general formula (I) in which: n is an integer from 0 to 4; R1 is halogen, trifluoromethyl, or alkyl of 1 to 6 carbons or cycloalkyl of 3 to 7 carbons; R2 and R3 are the same or different and are hydrogen, halogen, alkyl of 1 to 4 carbons or cycloalkyl of 3 to 5 carbons, at least one of R2 and R3 being other than hydrogen; R4 is a carboxylic acid amide (CONR′R″) or an acylsulphonamide (CONHSO2R′) derivative, or a pharmaceutically acceptable salt thereof, and all stereoisomers thereof; or when n is equal to or greater than one, R4 may be a heteroaromatic moiety which may be substituted or unsubstituted, or an amine (NR′R″). R5 is hydrogen or an acyl (such as acetyl or benzoyl) or other group capable of bioconversion to generate the free phenol structure (wherein R5=H). In addition, a method is provided for preventing, inhibiting or treating a disease associated with metabolism dysfunction or which is dependent upon the expression of a T3 regulated gene, wherein a compound as described above is administered in a therapeutically effective amount. Examples of such diseases associated with metabolism dysfunction or are dependent upon the expression of a T3 regulated gene include obesity, hypercholesterolemia, atherosclerosis, cardiac arrhythmias, depression, osteoporosis, hypothyroidism, goiter, thyroid cancer as well as glaucoma, congestive heart failure and skin disorders.

The present invention provides conjugates having a degradable linkage and polymeric reagents useful in preparing such conjugates. The conjugates as well as the polymeric reagents used to form the conjugates include at least one of each the following: an aromatic moiety comprising an ionizable hydrogen atom, a spacer moiety, and a water-soluble polymer. Methods of making polymeric reagents and conjugates, as well as methods for administering conjugates and compositions, are also provided.

The present invention provides pressure-sensitive adhesives having a refractive index of at least 1.48. The pressure-sensitive adhesives comprise at least one monomer containing a substituted or an unsubstituted aromatic moiety.

Provided is a polycarbonate-polyorganosiloxane copolymer having high impact resistance and excellent transparency, in particular, a high total light transmittance and a small haze, and a method of producing thereof. Specifically, provided is a polycarbonate-polyorganosiloxane copolymer, containing a main chain having a repeating unit represented by the following general formula (I) and a constituent unit represented by the following general formula (II), in which: n in the general formula (II) is 25 to 50; and the copolymer satisfies the following conditions (a) and (b): (a) a molded article having a thickness of 2 mm made of the copolymer has a total light transmittance measured based on ISO 13468 of 88% or more and a haze measured based on ISO 14782 of 0.7% or less; and (b) a molded article having a thickness of 3 mm made of the copolymer has a total light transmittance measured based on ISO 13468 of 88% or more and a haze measured based on ISO 14782 of 1.0% or less.(In the formulae, R1 and R2 each independently represent a halogen atom, an alkyl group or an alkoxy group, X represents a single bond, an alkylene group, an alkylidene group, a cycloalkylene group, a cycloalkylidene group, —S—, —SO—, —SO2—, —O— or —CO—, and a and b each independently represent an integer of 0 to 4. R3 to R6 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group or an aryl group, Y represents a single bond, or an organic residue containing an aliphatic or aromatic moiety, and n represents an average repetition number.)

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.