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Organic field effect transistor with pentacene derivative as semiconductor material and preparing method thereof

A technology of effect transistors and organic fields, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problem of field effect mobility and current switch ratio drop, OFET field effect mobility and current switch ratio, Difficult to practical application and other problems, to achieve the effect of loose conditions and good operation stability

Inactive Publication Date: 2005-02-23
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these results are obtained under nearly harsh conditions, which are difficult to achieve practical application
At present, OFETs using pentacene compounds as organic semiconductor materials have the following problems: 1) High mobility and current switching ratio are obtained through high-cost vacuum evaporation film formation or pentacene single crystal film formation under extreme conditions ; (Lin Y., et al.IEEE Electron Device Lett., 1997, 18:606~608; Schon J., et al.Science, 2000, 287:1022~1023; Batlogg B., et al.Org.Electron ., 2000, 1:57~64); 2) Compared with pentacene, pentacene derivatives are rarely used as OFET semiconductor materials and the field effect mobility and current switch ratio are much lower (Wudl F., et al. Adv.Mater., 2003, 15: 1090~1093); 3) The use of precursor solution to process organic semiconductor film formation is limited to pentacene itself, and the field effect mobility and current switch ratio of the prepared OFET are very low (Herwing P ., et al. Adv. Mater., 1999, 11: 480-483)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] (1) First coat a silicon dioxide dielectric layer on the highly doped silicon gate substrate by magnetron sputtering, and then prepare 1, 2, 3, 4, 8, 9, 10 by evaporation, 11-octafluoropentacene (hereinafter referred to as FP) semiconductor layer, and then vapor-deposit gold electrodes as the source and drain to obtain the final Top type organic field effect transistor (hereinafter referred to as OFET-FP-T); under the same preparation conditions, Bottom type organic field effect transistors (hereinafter referred to as OFET-FP-B) with the same device parameters can be prepared.

[0015] (2) FP compounds and maleic anhydride in methyl rhenium trioxide (CH 3 ReO 3 ) under the action of reflux in chloroform. After purification, the FP soluble precursor is obtained, and a chloroform solution is prepared as a spin-coating solution for preparing OFET semiconductor layers. The OFET is prepared as follows. First, a silicon dioxide dielectric layer is deposited on the highly d...

Embodiment 2

[0025] In Example 1, FP was replaced with 1,2,3,4,8,9,10,11-octachloropentacene (hereinafter referred to as ClP), and the rest were the same as Example 1. The device performance is shown in Table 2.

[0026] Table 2 OFET performance

[0027] OFET Carrier Mobility Threshold Voltage Current Switching Ratio

[0028] [cm 2 ·(V·s) -1 ] (V)

[0029] OFET-ClP-T 0.06 -1.7 >10 5

[0030] OFET-ClP-B 0.04 -1.6 >10 5

[0031] OFET-ClP / maleic anhydride-T 0.05 -2.0 >10 5

[0032] OFET-ClP / maleic anhydride-B 0.01 -2.3 >10 5

Embodiment 3

[0034] In Example 1, FP is replaced with 1,2,3,4,8,9,10,11-octabromopentacene (hereinafter referred to as BrP), and the rest is the same as Example 1. The device performance is shown in Table 3.

[0035] Table 3 OFET performance

[0036] OFET Carrier Mobility Threshold Voltage Current Switching Ratio

[0037] [cm 2 ·(V·s) -1 ] (V)

[0038] OFET-BrP-T 0.04 -2.0 >10 5

[0039] OFET-BrP-B 0.02 -1.8 >10 5

[0040] OFET-BrP / maleic anhydride-T 0.01 -2.5 >10 5

[0041] OFET-BrP / Maleic Anhydride-B 0.02 -2.7 >10 5

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PUM

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Abstract

An OFET with pentacene derivatives as semiconductor materials includes Top type and Bottom type. The substituting radicals involve halides (F-, Cl-, Br-, I-). Films can be produced from pentacene derivatives directly, or produced from pentacene derivatives precursor indirectly, by vacuum depositing, rotary coating, throwing, casting, LB method, printing, and ink jetting, etc. The produced OFET has good field effect transition rate and electric current switching ratio stably.

Description

technical field [0001] The invention relates to an organic field effect transistor using a novel organic semiconductor material and a preparation method thereof. Background technique [0002] Pentacene compounds are widely used as organic semiconductors in the preparation of organic field-effect transistors (OFETs), which have good performance and a field-effect mobility as high as 2.0cm 2 / (V.s), and the device current switching ratio is as high as 10 8 . However, these results are obtained under nearly harsh conditions, which are difficult to achieve practical application. At present, OFETs using pentacene compounds as organic semiconductor materials have the following problems: 1) High mobility and current switching ratio are obtained through high-cost vacuum evaporation film formation or pentacene single crystal film formation under extreme conditions ; (Lin Y., et al.IEEE Electron Device Lett., 1997, 18:606~608; Schon J., et al.Science, 2000, 287:1022~1023; Batlogg B...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/40
Inventor 黄维刘承斌
Owner FUDAN UNIV
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