The invention provides a self-aligned double-layer channel metallic
oxide thin film transistor and a manufacturing method of the self-aligned double-layer channel metallic
oxide thin film transistor. The manufacturing method comprises the following steps that a thick high-resistivity metallic
oxide semiconductor layer and a thin low-resistivity metallic oxide layer deposit on a substrate, so that double
layers of channels are formed; photoetching and
etching are carried out on the double
layers of channels, so that an active area graph is formed; a gate medium layer and a gate
electrode are formed on the double
layers of channels; a covering layer with H deposits on the whole substrate, then
heat processing is carried out so that H can diffuse to metallic oxide outside the channel area not covered by the gate
electrode and the gate medium, and a heavily doped low-resistivity source drain area is formed; a
contact hole and a
contact electrode are prepared. The self-aligned double-layer channel metallic
oxide thin film transistor and the manufacturing method of the self-aligned double-layer channel metallic
oxide thin film transistor adopt self-aligned double-layer channel top gate structure, can lower source
drain resistance, lower the influence of ambient light on elements, lower off-state current, and improve on-state current and migration rate of the elements.