73results about How to "Minimized contact resistance" patented technology

A method of manufacturing an organic light emitting diode (OLED) display includes forming an upper electrode power source line outside of a pixel area over a substrate, forming a lower electrode in the pixel area, forming at least one layer of an organic material layer in the pixel area and areas outside of the pixel area, forming an upper electrode in the pixel area, selectively removing portions of the organic material layer that are exposed outside of the upper electrode, thereby exposing the upper electrode power source line, and coating a conductive material between the upper electrode and the upper electrode power source line in a normal pressure condition such that the conductive material overlaps the upper electrode and the upper electrode power source line, thereby forming a connection portion.

The present invention provides a method of producing a multilayer barrier structure in a solid oxide cell stack, comprising the steps of: -providing a metal interconnect; -applying a first metal oxide layer on said metal interconnect; -applying a second metal oxide layer on top of said first metal oxide layer; -applying a third metal oxide layer on top of said second metal oxide layer; -forming a solid oxide cell stack comprising said metal interconnect having said metal oxide layers thereon; and -reacting the metal oxide in said first metal oxide layer with the metal of said metal interconnect during the SOC-stack initialisation, and a solid oxide stack comprising an anode contact layer and support structure, an anode layer, an electrolyte layer, a cathode layer, a cathode contact layer, a metallic interconnect, and a multilayer barrier structure which is obtainable by the above method and through an initialisation step, which is carried out under controlled conditions for atmosphere composition and current load, which depends on the layer composition facilitating the formation of the desired reaction products as a dense barrier layer without chromium species migrating to the air-electrode.

A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).

A proton exchange membrane (PEM) fuel cell end plate assembly provides an axial direction electric lead on an end plate of the assembly, and minimizes the contact resistance between an end fluid separator plate of a fuel cell stack and a current collector of the assembly. The current collector comprises an electrically conductive flat plate and a solid member connected together. The member goes through an opening on the end plate and provides an axial direction electric lead from the fuel cell stack. Means are provided to firmly contact the current collector and the fluid separator plate to maintain good contact across the entire area between the two components. The means of firmly contacting include moulding or bonding the separator plate and current collector together, or applying pressure to the separator plate and current collector such that firm contact is maintained between the two components.

Using metal foams for the electrode of secondary lithium battery, preparing method thereof, and secondary lithium battery including the metal foam. A metal foam is used in an electrode of secondary lithium battery where the surface and the inner pore walls are coated with the active materials, a method of manufacturing such metal foam, and secondary lithium battery including the metal foam.

Methods of forming integrated circuit devices (e.g., memory devices) include the use of preferred self-aligned contact hole fabrication steps. These steps improve process reliability by reducing the likelihood that contact holes will become misaligned to underlying integrated circuit device structures and thereby potentially expose the structures in an adverse manner. Typical methods include the steps of forming a plurality of interconnection patterns on a substrate and then covering a surface of the interconnection patterns and a portion of the substrate with a capping insulating layer such as silicon nitride layer. The capping insulating layer is then covered with an upper interlayer insulating layer different from the capping insulating layer. The upper interlayer insulating layer and the capping insulating layer are then dry-etched in sequence to form a first narrow contact hole that exposes the substrate, but preferably does not expose the interconnection patterns. The first contact hole is then widened in a self-aligned manner using the capping insulating layer as an etch-stop layer. This widening step is performed by wet etching sidewalls of the first contact hole using an etchant that etches the upper interlayer insulating layer faster than the capping insulating layer. In this manner, the first contact hole may be formed to initially compensate for potential misalignment errors and then a self-aligned wet etching step may be performed to widen the first contact hole into a second contact hole so that low resistance contacts (e.g., contact plugs) can be provided therein.

This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

There is provided a method of manufacturing a semiconductor device that can reduce the number of processes, and decrease contact resistance between plugs. The method comprises forming a first interlayer dielectric film having a first opening where a contact plug is to be formed; uniformly forming a first conductive layer on the first interlayer dielectric film and in the first opening; forming a resist defining an interconnect pattern by a lithography process on a region excluding the first opening; performing first anisotropic etching to remove a region of the first conductive layer not covered with the resist until an upper face of the first interlayer dielectric film is exposed, thus to form an interconnect and the contact plug.

A nitride semiconductor element 1 includes a base structure part 5, and an element structure part 11 formed on the base structure part 5 and having at least an n-type AlGaN based semiconductor layer 6, and p-type AlGaN based semiconductor layers 8, 9, 10, and further includes an n-electrode contact part 13a formed on the n-type AlGaN based semiconductor layer 6, an n-electrode pad part 13b formed on the n-electrode contact part 13a, and a p-electrode 12 formed on the p-type AlGaN based semiconductor layers 8, 9, 10, in which an AlN mole fraction in the n-type AlGaN based semiconductor layer 6 is 20% or more, the n-electrode contact part 13a includes one or more metal layers, and the p-electrode 12 and the n-electrode pad part 13b have a common laminated structure of two or more layers having an Au layer as an uppermost layer, and an Au diffusion preventing layer composed of conductive metal oxide and formed under the uppermost layer to prevent Au diffusion.

Improved thin film transistor array panels are provided. In one embodiment, a panel includes a plurality of gate lines, data lines, and a plurality of switching elements connected to the gate lines and the data lines. An interlayer insulating layer is formed between the gate lines and the data lines. A passivation layer covering the gate lines, the data lines, and the switching elements is also provided having a plurality of first contact holes exposing portions of the data lines, wherein the switching elements and the pixel electrodes are connected through the first contact holes. A plurality of contact assistants are formed on the passivation layer and are connected to the data lines through a plurality of second contact holes in the passivation layer. A plurality of auxiliary lines are connected to the data lines through a plurality of third contact holes in the interlayer insulating layer.

An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region and a p-type region. N- and p-contacts electrically connected to the n- and p-type regions are both formed on the same side of the semiconductor structure. The semiconductor structure is connected to the mount via the contacts. The growth substrate is removed from the semiconductor structure and the thick transparent substrate is omitted, such that the total thickness of semiconductor layers in the device is less than 15 μm in some embodiments, less than 10 μm in some embodiments. The top side of the semiconductor structure may be textured.

The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming a deficiency and an upper layer for minimizing external affection, on the multilayered source and drain electrodes.

The present invention easies a connection between electrodes of a capillary array device and a connection plate for supplying a high voltage to the electrodes.According to the present invention, a connection plate 23 and hollow electrodes 20 are connected without solder but via a spring force. Alternatively, the hollow electrodes 20 can be connected to the connection plate 23 by utilizing volume elasticity of the connection plate.

The invention relates to a re-settable, single-phase, thermo / electric circuit breaker utilizing a U-shape bimetallic element of substantial resistance properties in the circuit, so that when a predetermined overload current occurs the bimetallic element self heats and moves to trip a mechanism that opens the breaker circuit. The invention replaces the double-contact break configuration normally associated with a breaker of this type, with a single contact break configuration designed to produce a sliding action between contacts during the normal reset operation, providing a more reliable continuity at the moveable and stationary contact interface that is also less expensive to produce.

An improvement in atmospheric evaporative water condenser is disclosed. The apparatus includes tubes through which a refrigerant would pass and a variety of generally rectangular or circular fins are in contact with the tubes which causes the fins to cool. This permits water in its vapor form which exists in atmospheric air to condense on the fins and the condensate is collected as potable water. The improvement includes a plurality of different width spacers which are toleranced to be placed over the tubes and secured in desired positions. The fins are placed between the spacers allowing different fin spacing configurations on the apparatus. The different fin configurations optimize airflow for different coil and fin sections and help prevent water flooding or frost buildup on the fins which impair efficiency. Also, the spacers allow the fins to be placed far enough apart that non-frozen condensate does not block the air flow through the space between the fins.

A fuel cell bipolar plate obtained by subjecting a body shaped from a specific composition to surface roughening treatment and atmospheric pressure plasma treatment has a gas flow channel face with specific surface characteristics which endow the bipolar plate with an excellent and long-lasting hydrophilicity that enables water which forms during power generation by the fuel cell to be easily drained off, and which also provide the bipolar plate with a low contact resistance with electrodes in the fuel cell.

The present invention discloses a process for manufacturing a fuel cell and an associated fuel cell array that includes novel pre-shaped current collectors and conforming compression plates. The current collectors are pre-shaped to counteract any deflection of the fuel cell after compression is released during manufacture. The pre-shaped current collectors may bend outwards by the same amount as previously, however, the overall compression relaxation may be much lower because the pre-shaped current collectors are bending back into the flat position, as opposed to away from it. Also provided with the present invention are associated mold plates that induce the desired pre-shaping to the current collectors.

A display device includes a wire substrate including a wire unit for driving the display device, an integrated circuit chip mounted at the wire substrate, and a pad unit extended from the wire unit to be disposed between the wire substrate and the integrated circuit chip. The pad unit is connected to the integrated circuit chip. The pad unit includes a first conductive layer extended from the wire unit, and a second conductive layer disposed on the first conductive layer. The hardness of the second conductive layer is less than the hardness of the first conductive layer.

Disclosed are a solar cell and preparing method of the same. The solar cell includes a back electrode layer on a support substrate, a molybdenum oxide layer on the back electrode layer, a light absorbing layer on the molybdenum oxide layer, and a front electrode layer on the light absorbing layer.

Fuel cell separators which are made by shaping a composition that includes a thermosetting resin, an artificial graphite with an average particle size of 20 to 70 μm and an internal mold release agent and which have a surface with an average roughness Ra of 1.0 to 5.0 μm are very hydrophilic, and thus facilitate the removal of water that forms during power generation by the fuel cell. Such separators also have a low contact resistance with electrodes in the fuel cell.

An overvoltage protection element with a housing, with at least one overvoltage limiting component which is located in the housing, especially a varistor, with two terminal lugs which are each connected to a respective pole of the overvoltage limiting component in an electrically conductive manner, especially soldered or welded, and with two connecting elements for electrical connection of the overvoltage protection element to the current path or signal path to be protected. In the normal state of the overvoltage protection element, the connecting elements are each in electrically conductive contact with a respective terminal lug. The overvoltage protection element can be produced especially easily and economically by the first terminal lug and the first connecting element being integrally connected to one another and by the free end of the first connecting element which faces away from the overvoltage limiting component being made as a plug-in contact.

An indexable hexahedral cutting insert has opposing top and bottom abutting faces, opposing rake faces connecting to opposing side faces, and a central hole passing through the abutting faces. Each rake face is wider in the top-to-bottom direction at a different one of the side faces. Arcuate corner portions with one-directional curvature are formed along intersecting portions between the abutting faces and the side faces. Each abutting face has first and second wedge-shaped inclined planes adjoining and inclining toward corresponding first and second rake faces. Each inclined plane has a base side at a cutting edge formed at the border with one of the rake faces, and a width which gradually increases from one corner portion to the opposite corner portion along the abutting face. Each corner portion has an associated inclined arcuate surface adjacent to the wide end of the wedge-shaped inclined planes.

Highly effective, standalone gas-diffusion electrodes (GDEs) and the methods for their manufacture and test are disclosed, Nanocataiysis are directly bonded on a gas diffusion layer, so that the integrity of the catalyst layer holds without polymer electrolyte membrane, facilitating minimization of electronic, prottmtc, and diffusion resistances in the catalyst layer. The devised embodiments provide examples showing a facile hanging-strip method for testing the standalone GDEs in a solution electrochemical cell, which removes the mA-cm−2-scale mass transport limited currents on rotating disk electrodes to allow studies of reaction kinetics on single electrode over sufficiently wide current ranges (up to A cm−2) without mass transport limitation. Ultralow-Pi-content GDEs are fabricated as the cathode for hydrogen evolution in water eiectrolyzers and as the anode for hydrogen oxidation in hydrogen fuel cells. High performance GDEs with low loadings of platinum group metals are being developed for oxygen evolution reaction at the anode of water electrolyzers and for the oxygen reduction reaction at the cathode of fuel cells.

This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.