The invention diswcloses a method for unsealing a plastically-packaged apparatus containing an un-passivated
metal layer structure, comprising the following steps of: firstly,
etching the plastically-packaged apparatus for 5-10 seconds in an environment at 80-90 DEG C by fuming
nitric acid, starting to perform a cleaning process in 30 seconds, cleaning the etched apparatus by
acetone and deionized water, and then
drying in air; secondly,
etching the plastically-packaged apparatus for 10-20 seconds in an environment at 70-80 DEG C by an
etching acid I formed by mixing fuming
nitric acid with 98% concentrated sulphuric acid in a volume ratio of 2: 1, and immediately cleaning the apparatus by
acetone,
isopropyl ketone and deionized water after etching; and lastly,
drying in air. The plastically-packaged
semiconductor integrated circuit with a
chip surface made of
nickel-
copper,
nickel-
tungsten and the like and produced by a structure which is not protected by a
passivation layer is unsealed by a method of precisely controlling unsealing technique parameters and performing an etching process twice, the interior structure of the apparatus can be completely reserved after the apparatus is unsealed, and the apparatus is ensured to be able to keep
electrical performance after being unsealed, so that the demand on the integrity of the apparatus by the follow-up inspections of destructive physical analysis,
failure analysis and the like is completely satisfied.