The invention belongs to the field of
surface modification of materials, and particularly relates to a magnetic control arc
ion plating composite depositing process and a magnetic control arc
ion plating composite depositing device for controlling the movement velocity of a
cathode spot, restraining the transmission of
plasma, enhancing the
deposition rate and deposition uniformity of a thin film, reducing the spraying of large granules positioned on the surface of a target material and enhancing the
etching uniformity of the target material. The arc
ion plating device is provided with two
magnetic field generation devices, one is arranged behind the target material, and the other one is arranged at the outer side of a
plasma transmission channel; thin film deposition is accessorily carried out on the surface of a base body through a
coupling magnetic field generated by the two
magnetic field generation devices. The magnetic control arc
ion plating composite depositing process disclosed by the invention can reduce the spraying of the large granules positioned on the surface of the target material and the quantity of the large granules contained in the thin film through the
coupling magnetic field generated by the two coupled magnetic field generation devices, thereby solving the problem of nonuniformity of the
plasma on a transmission space in the traditional process, enhancing the utilization ratio of the plasma, enhancing the
deposition rate of the thin film and the thickness uniformity of the thin film and providing the effective guarantee for preparing various high-property thin films.