Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for prolonging service life of polycrystalline silicon chip minority carrier and reducing dislocation of polycrystalline silicon chip

A polycrystalline silicon wafer and minority carrier lifetime technology, which is applied in chemical instruments and methods, polycrystalline material growth, crystal growth and other directions, can solve the problems of polycrystalline silicon wafers such as larger grain size, low production cost, and minority carrier unevenness. Uniform and low problems, solving the effect of grain enlargement and dislocation increase, reducing production cost

Inactive Publication Date: 2016-06-15
JIANGXI SORNID HI TECH
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for improving the minority carrier life of polycrystalline silicon wafers and reducing the dislocation of polycrystalline silicon wafers, which solves the problems of polycrystalline silicon wafer grain size increase and dislocation increase, uneven and low minority carriers, and has high conversion efficiency of the whole ingot , The characteristics of low production cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0102] A method for improving the minority carrier lifetime of polycrystalline silicon wafers and reducing dislocations of polycrystalline silicon wafers, comprising the following steps: (1) preparing raw materials, loading the raw materials into a crucible and sending them into an ingot furnace; (2) performing a heating process; (3) carrying out Melting process; (4) crystal growth process; (5) annealing process; (6) cooling process, after cooling, open the ingot furnace to obtain polycrystalline ingots;

[0103] 1) The step (1) raw material preparation weight ratio is: 50% of primary polycrystalline, 35% of single polycrystalline recycled material, 5% of single polycrystalline fragments, 10% of purified square rod, the primary polycrystalline includes primary Polycrystalline (greater than 6N), secondary and tertiary primary polycrystalline, primary polycrystalline granular materials, single and polycrystalline recycled materials include silicon ingot head material, tail materi...

Embodiment 2

[0144] A method for improving the minority carrier lifetime of polycrystalline silicon wafers and reducing dislocations of polycrystalline silicon wafers, comprising the following steps: (1) preparing raw materials, loading the raw materials into a crucible and sending them into an ingot furnace; (2) performing a heating process; (3) carrying out Melting process; (4) crystal growth process; (5) annealing process; (6) cooling process, after cooling, open the ingot furnace to obtain polycrystalline ingots;

[0145] 1) The step (1) raw material preparation weight ratio is: primary polycrystalline 58%, single polycrystalline recycled material 30%, single polycrystalline fragments 4%, purified square rod 8%, the primary polycrystalline includes primary Polycrystalline (greater than 6N), secondary and tertiary primary polycrystalline, primary polycrystalline granular materials, single and polycrystalline recycled materials include silicon ingot head material, tail material, edge skin...

Embodiment 3

[0186] A method for increasing the minority carrier lifetime of polycrystalline silicon wafers and reducing dislocations of polycrystalline silicon wafers, comprising the following steps: (1) preparing raw materials, loading the raw materials into a crucible and sending them into an ingot furnace; (2) performing a heating process; (3) carrying out Melting process; (4) crystal growth process; (5) annealing process; (6) cooling process, after cooling, open the ingot furnace to obtain polycrystalline ingots;

[0187] 1) The step (1) raw material preparation weight ratio is: primary polycrystalline 65%, single polycrystalline recycled material 25%, single polycrystalline fragments 3%, purified square rod 7%, the primary polycrystalline includes primary Polycrystalline (greater than 6N), secondary and tertiary primary polycrystalline, primary polycrystalline granular materials, single and polycrystalline recycled materials include silicon ingot head material, tail material, edge ski...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for prolonging service life of a polycrystalline silicon chip minority carrier and reducing dislocation of a polycrystalline silicon chip. The method comprises the following steps: preparing a raw material, loading the raw material into a crucible, and sending into an ingot furnace; carrying out the heating process; carrying out the melting process; carrying out the crystal growth process; carrying out the annealing process; and carrying out the cooling process, and after the cooling, opening the ingot furnace to obtain ingot polycrystals. The method solves the problems that the polycrystalline chip crystal particle is increased, the dislocation is increased, and the minority carrier is non-uniform and low and has the characteristics of high whole ingot conversion efficiency and low production cost.

Description

technical field [0001] The invention relates to a method for improving the minority carrier lifetime of polycrystalline silicon slices and reducing the dislocation of polycrystalline silicon slices. Background technique [0002] At present, polycrystalline ingots are making high-efficiency polycrystalline, such as the production process of high-efficiency semi-melted polycrystalline ingots, patent number: 201410400824, when using semi-melt technology to make high-efficiency polycrystalline, due to the lateral temperature of the thermal field and the The inhomogeneity of the thermal field itself can easily lead to the melting of the bottom seed crystal. After the bottom seed crystal is melted, the problem of chaotic and large bottom crystal grains will appear, which will lead to the increase of defects such as dislocations and seriously affect the conversion efficiency of silicon wafers. [0003] In the case of polycrystalline ingot high-efficiency silicon wafers, because the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 杨平张泽兴黄林洪炳华张小东张珩琨许桢冯子甜
Owner JIANGXI SORNID HI TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com