Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

86 results about "Organometallic chemistry" patented technology

Organometallic chemistry is the study of organometallic compounds, chemical compounds containing at least one chemical bond between a carbon atom of an organic molecule and a metal, including alkaline, alkaline earth, and transition metals, and sometimes broadened to include metalloids like boron, silicon, and tin, as well. Aside from bonds to organyl fragments or molecules, bonds to 'inorganic' carbon, like carbon monoxide (metal carbonyls), cyanide, or carbide, are generally considered to be organometallic as well. Some related compounds such as transition metal hydrides and metal phosphine complexes are often included in discussions of organometallic compounds, though strictly speaking, they are not necessarily organometallic. The related but distinct term "metalorganic compound" refers to metal-containing compounds lacking direct metal-carbon bonds but which contain organic ligands. Metal β-diketonates, alkoxides, dialkylamides, and metal phosphine complexes are representative members of this class. The field of organometallic chemistry combines aspects of traditional inorganic and organic chemistry.

Growth method of compound semiconductor epitaxial layer on silicon substrate and device structure with epitaxial layer

The invention discloses a growth method of a compound semiconductor epitaxial layer on a silicon substrate and a device structure with the epitaxial layer. The method comprises the steps of providing a single-crystal silicon substrate, carrying out surface processing on the single-crystal silicon substrate, depositing an AlN layer step by step through a radio frequency magnetron sputtering deposition method on the single-crystal silicon substrate, and depositing an AlN layer, or a GaN layer or an AlGaN layer on the AlN layer through an organometallic chemistry vapor deposition method or a hydride vapor phase epitaxy method. The AlN layer comprises an AlN nucleating layer used for controlling AlN crystal orientation and an AlN buffering layer used for controlling AlN crystal stress, and the AlN buffering layer is thicker than the AlN nucleating layer. The method effectively avoids the cracking and dislocation phenomenon caused by thermal mismatching and lattice mismatching, improves the crystal quality of the epitaxial layer, and enhances device performance.
Owner:DEPOSITION EQUIP & APPL SHANGHAI LTD

Method of forming PrxCa1−xMnO3 thin films having a PrMnO3/CaMnO3 super lattice structure using metalorganic chemical vapor deposition

A method of forming PrXCa1-xMnO3 thin films having a PMO / CMO super lattice structure using metalorganic chemical vapor deposition includes preparing organometallic compounds and solvents and mixing organometallic compounds and solvents to form PMO and CMO precursors. The precursors for PMO and CMO are injected into a MOCVD chamber vaporizer. Deposition parameters are selected to form a nano-sized PCMO thin film or a crystalline PCMO thin film from the injection of PMO and CMO precursors, wherein the PMO and CMO precursors are alternately injected into the MOCVD chamber vaporizer. The selected deposition parameters are maintained to deposit the PCMO thin film species having a desired Pr:Ca concentration ratio in a specific portion of the PCMO thin film. The resultant PCMO thin film is annealed at a selected temperature for a selected time period.
Owner:XENOGENIC DEV LLC

Deposition of carbon- and transition metal-containing thin films

A process depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.
Owner:BENEQ OY

Preparation method of enhanced GaN HEMT

The invention discloses a preparation method of an enhanced GaN HEMT, comprising the following steps: epitaxially forming a buffer layer, a channel layer, a barrier layer and a p type cap layer in sequence on a substrate through a metal-organic chemical vapor deposition method; preparing a mask layer on the p type cap layer; patterning the mask layer, exposing the p type cap layer of a grid regionpart and then forming a sample; epitaxially forming a p type layer on the exposed p type cap layer of the sample to form a p type grid, namely, epitaxially forming the p type grid in a selected region for the second time; removing the mask layer; etching down to the inside of the channel layer at two sides of the p type cap layer, constructing a table at the two sides of the channel layer and forming table isolation; preparing a source electrode and a drain electrode on the p type cap layer at two sides of the p type grid, and annealing; preparing a grid electrode on the p type grid and forming a device; preparing a passivation layer on the device, wherein the thickness of the passivation layer is higher than the p type grid, and opening the passivation layer of a region of the source electrode, the drain electrode and the grid electrode, namely, exposing the source electrode, the drain electrode and the grid electrode, thereby completing preparation.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Metal-organic chemical vapor deposition machine

The invention relates to a metal-organic chemical vapor deposition machine. The deposition machine comprises a reaction chamber body, a rotating seat, a crystal plate tray, a heater and a jet head. The reaction chamber body is provided with an opening. The rotating seat is arranged in the reaction chamber body. The crystal plate tray is arranged on the rotating seat and is driven by the rotating seat to rotate. The crystal plate tray comprises multiple loading zones with at least two different diameters and the loading zones are arranged on the surface of the crystal plate tray and can load multiple corresponding crystal plates. The heater is arranged below the crystal plate tray and located in the rotating seat. The jet head is covered on the opening of the reaction chamber body, and discharges reaction gas towards the surface of the crystal plate tray. The metal-organic chemical vapor deposition machine can utilize a usage space of a crystal plate tray effectively, greatly improve a production efficiency of an element, increase a production capacity, and give consideration to a utilization rate of a crystal plate tray space and a utilization of a large size crystal plate thereby reducing a production cost.
Owner:佛山市奇明光电有限公司 +1

Device for medium-temperature organometallic chemical vapor deposition of TiO2-Al2O3 composite coating and coating method

ActiveCN106367732AEliminate cracksInhibit surface coking and carbon depositionChemical vapor deposition coatingOrganometallic chemistryGas phase
The invention discloses a device for medium-temperature organometallic chemical vapor deposition of a TiO2-Al2O3 composite coating and a coating method. An organometallic chemical vapor deposition method and a horizontal furnace device are adopted, and raw materials are pre-mixed in a small deposition chamber, so that dense codeposition of the TiO2-Al2O3 composite coating on the surface of stainless steel within the temperature range of 250-450 DEG C is achieved, and the purpose of restraining coking and carbon deposition on the surface of the stainless steel is achieved.
Owner:SICHUAN UNIV

High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers

A high-temp chemical vapor deposition apparatus with communicated multiple reaction chambers for organic metal is composed of gas channel system, at least two reaction chambers with specimen heater, specimen feeding unit, delivering pipeline system, vacuumizing system, tail gase treating and alarm system and operation control system. It features that each reaction chamber can be specially designed according to the requirement of individual MOCVD system to material.
Owner:UNIV OF SCI & TECH OF CHINA +1

Method for preparing tin oxide single crystal film with orthogonal structure

The invention relates to a method for preparing a tin oxide single crystal film with an orthogonal structure, which belongs to the technical field of semiconductor photoelectron materials. The epitaxial preparation method for the tin oxide single crystal film with the orthogonal structure adopts an MOCVD process, uses Sn(C2H5)4 as an organic metal source, uses nitrogen as carrier gas, uses oxygen as oxidizing gas, and uses MOCVD equipment to epitaxially grow the tin oxide single crystal film with the orthogonal structure on an yttrium-doped zirconia single crystal substrate. The material prepared by the invention has the advantages of good photoelectric performance, high stability, good attachment performance and broad application prospect.
Owner:SHANDONG UNIV

Nano-scale printing mould structure and its use on luminous element

The invention discloses a die with a nano structure, comprising a substrate, a cushion layer arranged above the substrate and a die layer which is provided with the nano structure and is arranged above the cushion layer, wherein, the substrate is made of alumina or silicon, the cushion layer is made of gallium nitride, metal or dielectric materials, the die layer is made of materials not mixed with gallium nitride or n type gallium nitride. The invention also discloses a method for producing the die with the nano structure, comprising the following steps: forming the substrate; forming the cushion layer on the substrate; forming the die layer on the cushion layer, in addition, a nanoscale structure is formed on the upper surface of the die layer by adopting the organometallic chemical vapour deposition process or the potassium hydroxide solution wet-type etching method.
Owner:EPISTAR CORP

Zinc oxide photo-anode film and preparation method and application thereof

Disclosed is a zinc oxide photo-anode film. A zinc oxide photo-anode is manufactured on a substrate with a deposited FTO by means of the organometallic chemistry gas deposition technology, the photoelectrochemical properties of the photo-anode are improved by changing the deposition time and the B2H6 doping flow, and the MOCVD-ZnO is used as the photo-anode for electrolysis of water to obtain the higher photocurrent density. The zinc oxide photo-anode film has the advantages that the preparation method is simple in technology, the deposition temperature is low, the preparation time is short, implementation is easy and repeatability is good; the obtained ZnO photo-anode film has the pyramid-like appearance, incident light absorption of the ZnO photo-anode can be improved, and then incident light utilization of the photo-anode is improved; the zinc oxide photo-anode film is used as the photo-anode of a photoelectrochemical cell, the universality of the ZnO photo-anode can be improved, and industrial production is facilitated.
Owner:NANKAI UNIV

Method for enhancing growth of semipolar (A1,In,Ga,B)N via metalorganic chemical vapor deposition

A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and / or hydrogen and / or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
Owner:RGT UNIV OF CALIFORNIA

Organic metal chemical vapor deposition device for high-temperature growth of oxide film

The invention relates to an organic metal chemical vapor deposition device for the high-temperature growth of an oxide film, and belongs to the technical field of the preparation of an oxide film material. The invention particularly relates to a metal organics chemical vapor deposition device for the growth of the oxide semiconductor and other oxide film functional materials under an ultrahigh temperature (more than 1100 DEG C) and the oxygen atmosphere condition. A reaction chamber of the organic metal chemical vapor deposition device consists of a vacuum heating cavity, an inner rotating system, an outer rotating system, a U-shaped flange fixing device (1) with a water cooling function, a torch hollow shaft (2) with a water cooling function, a reaction chamber side wall (5) with a water cooling function, a sprinkling head (6) and a vacuuming system (18); and the torch hollow shaft (2) is divided into a torch body and a torch handle, and the torch handle penetrates through the U-shaped flange base (1). A rotating motor drives the outer rotating system to rotate along the U-shaped flange base (1) through a belt so as to drive a stainless steel rotating shaft (7) as well as a cylindrical quartz support (10) and a circular graphite cover (12) to rotate along the vacuum heating cavity.
Owner:上海镓旦电子信息有限公司

Preparation of (C5H5) Ru/TiO2 organic-inorganic hybrid photocatalyst

The invention discloses preparation of a (C5H5) Ru / TiO2 organic-inorganic hybrid photocatalyst, and an application of preparing methane solar fuel by performing photocatalytic reduction on carbon dioxide. According to the invention, a surface organometallic chemistry method is adopted, and dicyclopentadiene-based ruthenium is grafted to the surface of the titanium dioxide by adopting a surface grafting method to obtain a composite material having a similar semi-sandwich structure, wherein the mass percentage of ruthenium is 0.3-5.0%. Compared with dicyclopentadiene-based ruthenium-unmodified titanium dioxide, the (C5H5) Ru / TiO2 composite material prepared by adopting the method not only has relatively wide photoresponse range, but also photon-generated carriers can fast migrate and transmit as surface Ru-O-Ti keys are generated, and therefore, the photocatalytic efficiency of titanium dioxide in a carbon dioxide methanation process can be effectively improved. The method is simple and easy to operate, and has promotion significance on energy crisis mitigation and ecological environment improvement.
Owner:FUZHOU UNIV

A nido-carborane containing organometallic compound crystal and a preparing method thereof

The invention relates to a nido-carborane containing organometallic compound crystal and a preparing method thereof, and belongs to the technical field of organometallic chemistry. The structure of the compound is represented and determined by monocrystalline X-ray diffraction, nuclear magnetic resonance, and other methods. The crystal belongs to the monoclinic system and a space group P2<1> / n. The molecular formula of the crystal is C<27>H<37>B9ORuS2, and the molecular weight is 640.05. According to cell parameters, a is equal to 17.8494(15) angstroms, b is equal to 10.2272(9) angstroms, c is equal to 18.7853(16) angstroms, alpha is equal to 90 degrees, beta is equal to 92.9220 (10) degrees and gamma is equal to 90 degrees. 1,2-dicarba-closo-dodecaborane, n-butyllithium, sulfur powder, dichloro(p-cymene)ruthenium(II) dimer and 1,1-diphenyl-2-propyn-1-ol are adopted as raw materials and prepared under mild conditions into the nido-carborane containing organometallic compound that is (p-cymene)Ru(S2C2B9H<10>)(CH-C=C(Ph)<2>).H2O, wherein the p-cymene is 1-methyl-4-isopropyl phenyl. The compound has characteristics of the simple preparing method, a high yield, good repeatability, and the like and provides a novel idea for development of carborane-containing novel materials having good performance and application prospects.
Owner:SHANGRAO NORMAL UNIV

Method for preparing cubic indium oxide single-crystal film on yttrium-doped zirconia substrate

The invention relates to a preparation method for a cubic indium oxide single-crystal epitaxial film. By adopting the organic metal chemical gas deposition technology, trimethylindium is used as an organic metal source, nitrogen is used as carrier gas, oxygen is used as oxidizing gas and an organic metal chemical gas deposition device is used to epitaxially grow indium oxide single-crystal film on an yttrium-doped zirconia substrate under vacuum conditions. The film is the epitaxial material with single-crystal structure, twin crystals and domain structures do not exist in the film, and the mobility of the current carrier of the film is higher than 61.2 cm<2>V<-1>s<-1>.
Owner:SHANDONG UNIV

Method for forming a decorative coating, a coating, and uses of the same

InactiveUS20120218638A1Easy to controlGood thickness uniformity and conformal surface coverageSpecial surfacesNatural mineral layered productsOrganometallic chemistryEngineering
A decorative coating and a method for forming a decorative coating on a substrate (2). The decorative coating comprises an absorbing film (1) to attenuate the transmission of visible light through the coating. The method comprises the steps of bringing the substrate (2) into a reaction space, and depositing the absorbing film (1) on the substrate (2). Depositing the absorbing film (1) on the substrate comprises the steps of forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space, and treating the deposition surface with an organometallic chemical comprising first metal and subsequently purging the reaction space. The steps of forming the preliminary deposit and treating the deposition surface are alternately repeated to increase absorption of the absorbing film (1).
Owner:BENEQ OY

Method for forming a decorative coating, a decorative coating, and uses of the same

A decorative coating and a method for forming a decorative coating on a substrate (2). The decorative coating comprises an absorbing film (1) to attenuate the transmission of visible light through the coating. The method comprises the steps of bringing the substrate (2) into a reaction space, and depositing the absorbing film (1) on the substrate (2). Depositing the absorbing film (1) on the substrate comprises the steps of forming a preliminary deposit of transition metal oxide on the deposition surface and subsequently purging the reaction space, and treating the deposition surface with an organometallic chemical comprising first metal and subsequently purging the reaction space. The steps of forming the preliminary deposit and treating the deposition surface are alternately repeated to increase absorption of the absorbing film (1).
Owner:青岛四方思锐智能技术有限公司

Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds

Bis(cyclopentadienyl)ruthenium complex having a content of at least one member selected from among sodium, potassium, calcium, iron, nickel and zinc of 5ppm or below; and bis(cyclopentadienyl)ruthenium complex incorporated with 10 to 100ppm of rhenium. The complexes are suitable for metalorganic chemical vapor deposition (MOCVD) and can give ruthenium -containing thin films.
Owner:MITSUBISHI MATERIALS CORP

Three-junction cascade solar cell and manufacturing method thereof

The invention relates to the technical field of solar energy, in particular to a three-junction cascade solar cell and a manufacturing method thereof. The manufacturing method comprises the following steps that a GaAs1-x-yNxBiy bottom cell layer, a first tunnel junction, an InmGa1-mAs1-nNn intermediate cell layer, a second tunnel junction, an AlpGa1-p-qInqP top cell layer and a GaAs contact layer grow sequentially on a GaAs substrate through adoption of an organometallic chemical vapor deposition method; ohmic electrodes are manufactured at the bottom of the GaAs substrate and the top of the GaAs contact layer. The invention further provides a structure of the solar cell. According to the three-junction cascade solar cell and the manufacturing method, subsection absorption and utilization of solar spectra and current matching of cells are achieved, the cell layers are matched with GaAs lattices, high cell efficiency can be obtained, and the three-junction cascade solar cell is a potential and ideal solar cell material.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Photovoltaic type quantum well infrared detector with high working temperature

The invention discloses a photovoltaic type quantum well infrared detector with a high working temperature. A molecular beam epitaxy technology or an organometallic chemistry vapor deposition technology is used for growing, a standard semiconductor process is used for manufacturing, a semiconductor multilayer quantum well structure is achieved, and a functional layer is a multicycle quantum well of an asymmetrical structure. The photovoltaic type quantum well infrared detector with the high working temperature can work under the condition that bias voltages are not added or the bias voltages are small and has the excellent advantages of being low in dark currents, high in working temperature (working in an indoor temperature or a quasi indoor temperature), high in detection sensitivity and the like.
Owner:刘惠春

Application of lithium complex in hydroboration reaction of nitrile

The invention relates to a lithium compound and application thereof in the field of organic synthesis, in particular to application of a lithium complex in a hydroboration reaction of nitrile. Compared with the research of the beta-diimine anion ligand on organometallic chemistry, the application research of the beta-ketimine anion ligand is less, and the compound (complex) of the double-anion beta-ketimine ligand and the application thereof and the hydroboration reaction are not reported so far. The compound is applied to the hydroboration reaction of nitrile, and efficient reduction of nitrile and pinacol borane can be achieved.
Owner:SUZHOU UNIV

Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light

The invention discloses a kind of siamese twin-core tube for the double-desk high speed light detector from whose side surface the light may enter; it invention refers to a kind of light detector; concretely, refers to the tube core structure of the light detector. The core is one the iron doped semi-insulated semiconductor InP substrate, through the organic metal chemical gas phase deposition technology, the buffer layer2, the subjacent optical waveguide layer3, the light absorbing layer4, the upper optical waveguide layer5, the light limited layer6 and connecting layer7 are generated on along the vertical direction; through the etching technology, it is formed into the upper and the subjacent stage parts like isles; the upper part includes layers from 3 to 7, the horizon plane is in shape of (semiellipse-rectangular-semiellipse); the subjacent part is the second layer, which is a rectangular. Finally through the cleavage technology, the tube core is divided into two light detector tube cores. The structure is simple, the volume is small, the light entrance surface is easy to be understood, the core area can be adjusted, and the assembly is convenient.
Owner:WUHAN TELECOMM DEVICES

Ruthenium complex of semi-sandwich structure and preparation method thereof

The invention relates to a ruthenium complex crystal of a semi-sandwich structure and a preparation method thereof and belongs to the technical field of organometallic chemistry. The structure of thecomplex is represented and confirmed by virtue of methods such as single crystal X-ray diffraction and nuclear magnetic resonance, the crystal belongs to a triclinic crystal system, a space group is P-1, a molecular formula is C3OH38B10ORuS2, the molecular weight is 687.89, and cell parameters are described in the specification. 1,2-dicarbon-based-closed-dodecocarborane, n-butyl lithium, sulfur, dichloro(p-methyl isopropyl phenyl) ruthenium (II) dimer and 1-phenyl-2-propyne-1-alcohol are used as raw materials, and column chromatographic separation is adopted, so that the product is obtained. The complex crystal has relatively good chemical stability and solubility, and the preparation method has the advantages of simplicity and high yield, so that the ruthenium complex crystal provided bythe invention has potential drug application value.
Owner:SHANGRAO NORMAL UNIV

Synthesis of pH-responding palladium N-heterocyclic carbene chelate and catalytic application thereof

The invention provides synthesis of a pH-responding palladium N-heterocyclic carbene chelate and catalytic application thereof. The synthesis process consists of: taking dimethyl sulfoxide as a solvent, adding palladium acetate and a benzoate-containing dibromodiimidazole ionic salt, leaving them to react for 12h at 60DEG C, then raising the temperature to 130DEG C to make them further react for 2h, conducting concentration, carrying out washing with tetrahydrofuran, and performing vacuum drying to obtain a water insoluble N-heterocyclic carbene chelate of palladium; and hydrolyzing the ester group in the chelate by lithium hydroxide, then conducting acidification with hydrochloric acid or hydrobromic acid, thus obtaining the pH-responding palladium N-heterocyclic carbene chelate. The palladium N-heterocyclic carbene chelate synthesized in the invention contains a carboxyl group and has a pH-responding function. The palladium N-heterocyclic carbene chelate has high catalytic activity to the coupling reaction of aryl halides in water, and a catalyst can be separated by adjusting the pH of the reaction system and can be recycled repeatedly. The catalytic system is environment-friendly, thus providing a new path for development of organometallic chemistry and application of N-heterocyclic carbine compounds.
Owner:FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI

Solution raw material for organic metal chemical vapor deposition and complex oxide dielectric thin film formed by using such raw mataerial

Disclosed is a solution raw material for organic metal chemical vapor deposition having high film-forming characteristics and excellent step coverage. Also disclosed is a complex oxide dielectric thin film formed by using such a raw material. Specifically, an improved solution raw material for organic metal chemical vapor deposition obtained by dissolving one or more organic metal compounds in an organic solvent is disclosed which is characterized in that the organic solvent is 1,3-dioxolane or a mixed solvent obtained by mixing a first solvent composed of 1,3-dioxolane and a second solvent composed of one or more solvents selected from the group consisting of alcohols, alkanes, esters, aromatic series, alkyl ethers and ketones.
Owner:MITSUBISHI MATERIALS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products