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Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds

The technology of a ruthenium compound and its manufacturing method, which is applied in the field of ruthenium-containing thin films, can solve problems such as the deterioration of vaporization characteristics, and achieve the effects of excellent step coating properties, surface morphology, and excellent electrical properties

Inactive Publication Date: 2006-12-27
MITSUBISHI MATERIALS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0018] in Ru(Cp) 2 It is not clear whether the zinc mixed in as impurities in the coordination compound forms a coordination compound with Cp or takes the form of chloride, but the complex of zinc and Cp or chlorine or free Cp or chlorine can be combined with Ru(Cp ) 2 The Cp interacts and induces Ru(Cp) 2 metamorphism, so it is believed that causing Ru(Cp) 2 Deterioration of vaporization characteristics

Method used

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  • Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds
  • Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds
  • Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds

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Embodiment approach

[0054] Refer to the attached Figure 1 Preferred embodiments of the present invention will be described. However, the present invention is not limited to the following embodiments, and for example, components of these embodiments may be appropriately combined.

[0055] [the first mode]

[0056] The inventors of the present inventors diligently studied the influence of impurities contained in the ruthenium compound on film formation using the MOCVD method. Optimizing the content of the film can achieve a moderate film-forming speed.

[0057] The ruthenium compound of the present invention is by Ru(Cp) 2 The ruthenium compound composed of a coordination compound is characterized in that the content of either or both of sodium and potassium in the compound is 5 ppm or less. When the impurity content exceeds 5 ppm, deterioration of vaporization characteristics occurs. The content of impurities is preferably 0-3 ppm. More preferably 0-2 ppm. More preferably, it is 0-1.5 ppm....

Embodiment 1

[0083] Ru(Cp) with a sodium content of 1.4ppm manufactured using an adhesion inhibitor made of glass fiber 2 The complexes are sealed in ampoules under argon atmosphere. The ampoule was heated to 200°C in a heating furnace and kept unchanged for 72 hours. The ampoules were removed from the oven and air cooled to return to room temperature. The vaporization characteristics of the ruthenium compound in the ampoule returned to room temperature were measured using a TG-DTA apparatus (manufactured by MAC-science). The measurement conditions of the TG-DTA device are shown in Table 1.

[0084]

Embodiment 2

[0086] Ru(Cp) with a potassium content of 1.7ppm manufactured using an adhesion inhibitor made of glass fiber 2 The vaporization characteristics of the complex were measured using a TG-DTA apparatus in the same manner as in Example 1 except that.

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Abstract

Bis(cyclopentadienyl)ruthenium complex having a content of at least one member selected from among sodium, potassium, calcium, iron, nickel and zinc of 5ppm or below; and bis(cyclopentadienyl)ruthenium complex incorporated with 10 to 100ppm of rhenium. The complexes are suitable for metalorganic chemical vapor deposition (MOCVD) and can give ruthenium -containing thin films.

Description

technical field [0001] The invention relates to a ruthenium compound suitable for metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, hereinafter referred to as MOCVD) method, a manufacturing method thereof and a ruthenium-containing thin film obtained by using the compound. More specifically, it relates to a ruthenium compound most suitable for the MOCVD method using a solid sublimation method, a method for producing the same, and a ruthenium-containing thin film obtained using the compound. Background technique [0002] DRAM (Dynamic Random Access Memory), which is used as the main memory of personal computers and workstations, has a rapidly changing trend of high integration, and the development of technologies that can adapt to high integration of dielectric materials and electrode materials is in vogue. [0003] In order to impart given dielectric properties to the dielectric material, a heat treatment for crystallization in an oxidizing en...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F17/02C07F15/00C23C16/18H01L21/28H01L21/285
Inventor 平社英之石川雅之柳泽明男小木胜实
Owner MITSUBISHI MATERIALS CORP
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