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Zinc oxide photo-anode film and preparation method and application thereof

A photoanode, zinc oxide technology, applied in electrodes, gaseous chemical plating, coatings, etc., can solve the problems of the universal impact of ZnO photoanode materials, unfavorable large-area deposition of thin films, cumbersome preparation methods, etc., and achieve the preparation time. The effect of short, improving universality and simple process

Active Publication Date: 2015-09-23
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these methods have improved the PEC performance of ZnO, their preparation methods are cumbersome, costly and not conducive to large-area deposition of thin films, so they have a great impact on the universality of ZnO photoanode materials.

Method used

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  • Zinc oxide photo-anode film and preparation method and application thereof
  • Zinc oxide photo-anode film and preparation method and application thereof
  • Zinc oxide photo-anode film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A zinc oxide photoanode film is prepared by depositing on the surface of a textured FTO substrate by MOCVD, wherein the thickness of the FTO layer is 600nm, the centimeter resistance is 20Ω, and the optical band gap is 2eV; the thickness of the ZnO photoanode film is 1.5- 7.5μm, centimeter resistance is 500Ω, optical bandgap width is 3.2eV; its preparation method is to use zinc source liquid as diethyl zinc (DEZn), oxygen source liquid as water and doping source gas as B 2 h 6 , the carrier gas carrying gas is Ar gas, comprising the following steps:

[0018] 1) The FTO substrate was ultrasonically cleaned in a container of 99.7% absolute ethanol for 30 min, and then was cleaned with high-purity N 2 Blow dry, and use high-temperature tape to reserve an electron transport electrode that does not deposit ZnO on the FTO substrate;

[0019] 2) Place the above-treated FTO samples in the chamber of a single-chamber MOCVD deposition system to deposit thin films. Base zinc (D...

Embodiment 2

[0025] A preparation method of a zinc oxide photoanode film is basically the same as in Example 1, except that the deposition time in step 2) is 75min, the thickness of the ZnO film is 2.5 μm, and the " Pyramid-like zinc oxide (ZnO) photoanode film.

[0026] The surface morphology of the zinc oxide photoanode prepared by this method is the same as that in Example 1.

[0027] The application method of the prepared zinc oxide photoanode film is the same as in Example 1, and the photocurrent density curve of the zinc oxide photoanode prepared by this method is as follows image 3 As shown, the figure shows that: MOCVD-ZnO is used as a photoanode for photoelectrochemical cells, and the photocurrent density obtained under 0.62V vs.Ag / AgCl is 0.37mA / cm 2 .

Embodiment 3

[0029] A preparation method of a zinc oxide photoanode film is basically the same as in Example 1, except that the deposition time in step 2) is 125min, and the thickness of the ZnO film is 5.5 μm. Pyramid-like zinc oxide (ZnO) photoanode film.

[0030] The surface morphology of the zinc oxide photoanode prepared by this method is the same as that in Example 1.

[0031] The application method of the prepared zinc oxide photoanode film is the same as in Example 1, and the photocurrent density curve of the zinc oxide photoanode prepared by this method is as follows image 3 As shown, the figure shows that: MOCVD-ZnO is used as a photoanode for photoelectrochemical cells, and the photocurrent density obtained under 0.62V vs.Ag / AgCl is 0.71mA / cm 2 .

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Abstract

Disclosed is a zinc oxide photo-anode film. A zinc oxide photo-anode is manufactured on a substrate with a deposited FTO by means of the organometallic chemistry gas deposition technology, the photoelectrochemical properties of the photo-anode are improved by changing the deposition time and the B2H6 doping flow, and the MOCVD-ZnO is used as the photo-anode for electrolysis of water to obtain the higher photocurrent density. The zinc oxide photo-anode film has the advantages that the preparation method is simple in technology, the deposition temperature is low, the preparation time is short, implementation is easy and repeatability is good; the obtained ZnO photo-anode film has the pyramid-like appearance, incident light absorption of the ZnO photo-anode can be improved, and then incident light utilization of the photo-anode is improved; the zinc oxide photo-anode film is used as the photo-anode of a photoelectrochemical cell, the universality of the ZnO photo-anode can be improved, and industrial production is facilitated.

Description

technical field [0001] The invention relates to a method for producing hydrogen by photoelectrochemical water splitting, in particular to a zinc oxide photoanode film and its preparation method and application. Background technique [0002] Using solar energy is considered to be an effective way to solve the future energy crisis. The core component of a photoelectrochemical (PEC) cell is a semiconductor photoelectrode, which is mainly divided into a photoanode and a photocathode. Both exist as light-absorbing layers. The difference is that the former uses photogenerated holes to oxidize water to generate oxygen, while the latter uses photogenerated electrons to reduce water to generate hydrogen. TiO 2 , ZnO, FeO 3 and WO 3 Such metal oxides mainly exist as photoanodes in the PEC structure. With the advantages of favorable bandgap position, high photochemical activity, large storage capacity, low cost and non-toxicity, ZnO thin films have been widely used in photoanodes....

Claims

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Application Information

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IPC IPC(8): C23C16/40C25B11/00C25B1/04
CPCY02E60/36
Inventor 张晓丹王宁梁俊辉刘伯飞魏长春赵颖
Owner NANKAI UNIV
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