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Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light

A technology of photodetector and side entry, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of complex structure, difficult process, and no introduction in the production of light entrance surface, etc., and achieve the effect of simple structure and easy separation

Active Publication Date: 2004-11-17
WUHAN TELECOMM DEVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0024] The device structures introduced in these articles are either complicated in structure and difficult to implement; or there is no introduction to the production of the light entrance surface, and it is difficult to obtain a very flat light entrance surface; or they are not compatible with microwave coplanar waveguide connections.
And there is a common problem that there is no introduction or research on how to reliably connect the mesa-shaped die to the external circuit (such as a coplanar waveguide)

Method used

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  • Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light
  • Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light
  • Conjoined duplex tube core for double-table shaped high-speed photodetector with side face entered light

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Embodiment Construction

[0079] The present invention is a die design. Facts show that, according to this design and specific process manufacturing method (to be applied for another patent), a high-speed photodetector die with a single side light input has been made. The specific implementation is briefly described as follows.

[0080] 1) Select the InP substrate.

[0081] 2) Perform epitaxial growth.

[0082] 3) According to the designed structure diagram, the tube core is fabricated.

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Abstract

The invention discloses a kind of siamese twin-core tube for the double-desk high speed light detector from whose side surface the light may enter; it invention refers to a kind of light detector; concretely, refers to the tube core structure of the light detector. The core is one the iron doped semi-insulated semiconductor InP substrate, through the organic metal chemical gas phase deposition technology, the buffer layer2, the subjacent optical waveguide layer3, the light absorbing layer4, the upper optical waveguide layer5, the light limited layer6 and connecting layer7 are generated on along the vertical direction; through the etching technology, it is formed into the upper and the subjacent stage parts like isles; the upper part includes layers from 3 to 7, the horizon plane is in shape of (semiellipse-rectangular-semiellipse); the subjacent part is the second layer, which is a rectangular. Finally through the cleavage technology, the tube core is divided into two light detector tube cores. The structure is simple, the volume is small, the light entrance surface is easy to be understood, the core area can be adjusted, and the assembly is convenient.

Description

technical field [0001] The invention relates to a photodetector, a key optoelectronic device in a light receiving module in a digital synchronization system (SDH) 40Gb / s long-wavelength optical communication system; in particular, it relates to a tube core structure of the photodetector. Background technique [0002] The development trend of optical communication technology is that the signal transmission rate is getting higher and higher, and the transmission capacity is getting larger and larger. At the 2001 OFC International Conference in the United States, reports on 40Gb / s optical communication systems and optoelectronic devices began to appear, which represent the highest level of optical communication technology development today. [0003] The key components of 40Gb / s optical communication equipment are 40Gb / s optical sending module and 40Gb / s optical receiving module. In the 40Gb / s optical receiving module, the 40Gb / s PIN photodetector is a necessary key optoelectro...

Claims

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Application Information

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IPC IPC(8): H01L31/08H01L31/105
Inventor 丁国庆
Owner WUHAN TELECOMM DEVICES
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