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Photovoltaic type quantum well infrared detector with high working temperature

An infrared detector and operating temperature technology, applied in the field of infrared detection, can solve the problems of low operating temperature, limit the wide use of quantum well infrared detectors, and large dark current, and achieve low heat load, reduced heat dissipation requirements, and improved sensitivity Effect

Inactive Publication Date: 2013-09-11
刘惠春
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

However, the quantum well infrared detector also has obvious disadvantages: it usually works under a large bias voltage, has a large dark current, and has a relatively low operating temperature.
These two factors greatly limit the widespread use of quantum well infrared detectors

Method used

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  • Photovoltaic type quantum well infrared detector with high working temperature
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  • Photovoltaic type quantum well infrared detector with high working temperature

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Embodiment Construction

[0033]The invention proposes a photovoltaic quantum well infrared detector with high working temperature. Similar to the photoconductive QWIP, the functional layer of the photovoltaic quantum well infrared detector is composed of multiple periods of semiconductor quantum wells, and infrared light detection is realized by using the energy level transition of electrons or holes in the quantum wells. However, unlike the photoconductive QWIP, the functional layer of the photovoltaic quantum well infrared detector has an asymmetric structure. When no bias voltage is applied, the photoexcited carriers will move in one direction, thereby forming a photocurrent. The unique advantage of the photovoltaic quantum well infrared detector is that it can work with no bias voltage or very low bias voltage, and the dark current is very low or zero. Compared with the photoconductive QWIP, the dark current noise is also significantly reduced, and the operating temperature of the device is improv...

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Abstract

The invention discloses a photovoltaic type quantum well infrared detector with a high working temperature. A molecular beam epitaxy technology or an organometallic chemistry vapor deposition technology is used for growing, a standard semiconductor process is used for manufacturing, a semiconductor multilayer quantum well structure is achieved, and a functional layer is a multicycle quantum well of an asymmetrical structure. The photovoltaic type quantum well infrared detector with the high working temperature can work under the condition that bias voltages are not added or the bias voltages are small and has the excellent advantages of being low in dark currents, high in working temperature (working in an indoor temperature or a quasi indoor temperature), high in detection sensitivity and the like.

Description

technical field [0001] The invention relates to an infrared detection technology, in particular to a photovoltaic quantum well infrared detector with high working temperature. Background technique [0002] Infrared detectors can be roughly divided into two categories: thermal detectors and photon detectors according to their working principles. Thermal detectors use the temperature change caused by the absorption of infrared radiation, and their response depends on the incident light power, without wavelength selectivity. The disadvantages are low detection rate and slow response speed. Photon detectors measure the signal generated by the absorption of incident photons, and their responsivity is wavelength-dependent. Photon detectors have the advantages of high sensitivity, fast response, and simple structure, and are the mainstream direction of infrared technology development. [0003] The most important development of infrared detectors since the 20th century is semicond...

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Application Information

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IPC IPC(8): H01L31/101H01L31/0352
Inventor 刘惠春
Owner 刘惠春
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